MJD44H11AJ
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Nexperia USA Inc. MJD44H11AJ

Manufacturer No:
MJD44H11AJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11AJ is an 80 V, 8 A NPN high power bipolar transistor produced by Nexperia USA Inc. This transistor is housed in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. It is electrically similar to the popular MJD44H series and offers high thermal power dissipation capability and high energy efficiency due to reduced heat generation. The MJD44H11AJ is designed for general-purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers.

Key Specifications

Parameter Value Parameter Value
Type number MJD44H11A Size (Metric) (mm) 6.1 x 6.6 x 2.3
Polarity NPN Ptot (mW) 1750.0
VCEO [max] (V) 80 IC [max] (mA) 8000
hFE [min] 60 TJ [max] (°C) 150
Automotive qualified Yes Package DPAK (SOT428C)

Key Features

  • High thermal power dissipation capability
  • High energy efficiency due to less heat generation
  • Low collector-emitter saturation voltage
  • Fast switching speeds
  • Electrically similar to popular MJD44H series
  • Complementary PNP transistor: MJD45H11A
  • Ergonomic design for easy integration
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Constant current drive backlighting application
  • Motor drive
  • Relay replacement
  • High voltage capability applications
  • Precise relay control
  • Reliable in LED circuits

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the MJD44H11AJ transistor?

    The maximum collector-emitter voltage (VCEO) is 80 V.

  2. What is the maximum collector current (IC) of the MJD44H11AJ transistor?

    The maximum collector current (IC) is 8 A (8000 mA).

  3. What is the minimum current gain (hFE) of the MJD44H11AJ transistor?

    The minimum current gain (hFE) is 60.

  4. What is the package type of the MJD44H11AJ transistor?

    The package type is DPAK (SOT428C), a plastic single-ended surface-mounted package.

  5. Is the MJD44H11AJ transistor automotive qualified?

    Yes, the MJD44H11AJ transistor is AEC-Q101 qualified and PPAP capable.

  6. What are some typical applications of the MJD44H11AJ transistor?

    Typical applications include power management, load switch, linear mode voltage regulator, constant current drive backlighting, motor drive, and relay replacement.

  7. What is the maximum junction temperature (TJ) of the MJD44H11AJ transistor?

    The maximum junction temperature (TJ) is 150°C.

  8. Does the MJD44H11AJ transistor have a complementary PNP transistor?

    Yes, the complementary PNP transistor is the MJD45H11A.

  9. What are the key features of the MJD44H11AJ transistor in terms of thermal performance?

    The transistor has high thermal power dissipation capability and high energy efficiency due to less heat generation.

  10. How can I obtain samples of the MJD44H11AJ transistor?

    Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 1V
Power - Max:1.75 W
Frequency - Transition:160MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD44H11AJ MJD44H11J MJD45H11AJ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V 60 @ 2A, 1V 60 @ 2A, 1V
Power - Max 1.75 W 1.75 W 1.75 W
Frequency - Transition 160MHz 160MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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