Overview
The BUK9Y19-55B/C6,115 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes TrenchMOS technology and is packaged in a plastic case, making it suitable for a variety of high-performance applications. The device is designed for enhancement mode operation and is known for its high efficiency and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | BUK9Y19-55B/C6,115 |
| Manufacturer | Nexperia USA Inc. |
| Type | N-channel TrenchMOS logic level FET |
| Package | Plastic package |
| Operating Mode | Enhancement mode |
| Vds (Drain-Source Voltage) | 55 V |
| Vgs (Gate-Source Voltage) | ± 12 V |
| Rds(on) (On-State Resistance) | Typically 19 mΩ |
| Id (Continuous Drain Current) | Up to 30 A |
| RoHS Compliance | Yes |
Key Features
- TrenchMOS Technology: Provides high efficiency and low on-state resistance.
- Logic Level Gate Drive: Compatible with standard logic levels, making it easy to integrate into various circuits.
- High Current Capability: Supports continuous drain currents up to 30 A.
- Low On-State Resistance: Typically 19 mΩ, reducing power losses.
- RoHS Compliant: Meets EU/CN RoHS and other international environmental standards.
Applications
- Power Management: Suitable for power supplies, DC-DC converters, and other power management systems.
- Motor Control: Used in motor drive applications due to its high current handling and low on-state resistance.
- Industrial Automation: Ideal for use in industrial automation systems requiring high reliability and efficiency.
- Automotive Systems: Can be used in automotive applications such as battery management and power distribution.
Q & A
- What is the part number of this N-channel FET?
The part number is BUK9Y19-55B/C6,115. - Who is the manufacturer of this component?
The manufacturer is Nexperia USA Inc. - What technology is used in this FET?
This FET uses TrenchMOS technology. - What is the maximum drain-source voltage (Vds) for this component?
The maximum Vds is 55 V. - What is the typical on-state resistance (Rds(on)) of this FET?
The typical Rds(on) is 19 mΩ. - Is this component RoHS compliant?
Yes, it is RoHS compliant. - What are some common applications for this FET?
Common applications include power management, motor control, industrial automation, and automotive systems. - What is the maximum continuous drain current (Id) for this component?
The maximum Id is up to 30 A. - What is the gate-source voltage (Vgs) range for this FET?
The Vgs range is ± 12 V. - Why is TrenchMOS technology beneficial in this FET?
TrenchMOS technology provides high efficiency and low on-state resistance, reducing power losses and improving overall performance.
