BC847RAPNZ
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Nexperia USA Inc. BC847RAPNZ

Manufacturer No:
BC847RAPNZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRAN NPN/PNP 45V 0.1A DFN1412-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847RAPNZ is a bipolar transistor array manufactured by Nexperia USA Inc. This component is designed to integrate multiple transistors into a single package, enhancing the efficiency and compactness of electronic circuits. The BC847RAPNZ is particularly useful in applications where space is limited and high reliability is required.

Key Specifications

ParameterValue
TypeBipolar (BJT) Transistor Array
PolarityNPN, PNP
Maximum Collector-Emitter Voltage (Vceo)45V
Maximum Collector Current (Ic)100mA
Maximum Power Dissipation (Pd)480mW
Frequency (fT)100MHz
Package TypeSurface Mount

Key Features

  • Compact surface mount package, ideal for space-constrained designs.
  • High frequency operation up to 100MHz.
  • Low power consumption with a maximum power dissipation of 480mW.
  • High reliability with integrated multiple transistors in a single package.
  • Suitable for both NPN and PNP configurations.

Applications

The BC847RAPNZ bipolar transistor array is versatile and can be used in a variety of applications, including:

  • Audio amplifiers and audio circuits.
  • Switching and amplification in consumer electronics.
  • Automotive electronics, such as in-car audio systems and other control circuits.
  • Industrial control systems and automation.
  • Communication devices and radio frequency (RF) circuits.

Q & A

  1. What is the BC847RAPNZ?

    The BC847RAPNZ is a bipolar transistor array manufactured by Nexperia USA Inc., integrating multiple transistors into a single surface mount package.

  2. What are the key specifications of the BC847RAPNZ?

    Key specifications include a maximum collector-emitter voltage of 45V, maximum collector current of 100mA, and a frequency operation up to 100MHz.

  3. What are the advantages of using the BC847RAPNZ?

    Advantages include compact packaging, high frequency operation, low power consumption, and high reliability due to the integration of multiple transistors.

  4. In what types of applications is the BC847RAPNZ commonly used?

    Common applications include audio amplifiers, consumer electronics, automotive electronics, industrial control systems, and communication devices.

  5. What is the maximum power dissipation of the BC847RAPNZ?

    The maximum power dissipation is 480mW.

  6. Is the BC847RAPNZ suitable for high-frequency applications?

    Yes, it is suitable for high-frequency applications up to 100MHz.

  7. What is the package type of the BC847RAPNZ?

    The package type is surface mount.

  8. Can the BC847RAPNZ be used in both NPN and PNP configurations?

    Yes, it supports both NPN and PNP configurations.

  9. Where can I find detailed specifications and datasheets for the BC847RAPNZ?

    Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Mouser Electronics, Digi-Key, and Avnet.

  10. What are some potential alternatives to the BC847RAPNZ?

    Alternatives may include other bipolar transistor arrays from different manufacturers, such as the BC847 or similar models from other semiconductor companies.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:480mW
Frequency - Transition:100MHz
Operating Temperature:150°C
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1412-6
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In Stock

$0.34
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Similar Products

Part Number BC847RAPNZ BC847QAPNZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 480mW 350mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad
Supplier Device Package DFN1412-6 DFN1010B-6

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