Overview
The BAW56SRAZ is a quad high-speed switching diode array produced by Nexperia USA Inc. This component is designed for high-performance switching applications and is encapsulated in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The diode array features a common anode configuration and is known for its high switching speed, low leakage current, and low capacitance, making it an ideal choice for various electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Reverse Voltage (VR) | 90 | V |
| Forward Voltage (VF) | 1.25 @ IF = 150 mA | V |
| Average Forward Current (IF) | 375 | mA |
| Forward Surge Current (IFSM) | 4 | A |
| Reverse Recovery Time (trr) | 4 | ns |
| Reverse Leakage Current (IR) | 500 @ VR = 80 V | nA |
| Capacitance (Cd) | 2 | pF |
| Operating Temperature | 150 | °C |
| Package | DFN1412-6 (SOT1268) | |
| Mounting Type | Surface Mount | |
| Qualification | AEC-Q101 |
Key Features
- High switching speed with a reverse recovery time (trr) of ≤ 4 ns
- Low leakage current
- Low capacitance (Cd) of ≤ 2 pF
- Ultra small SMD plastic package (DFN1412-6 / SOT1268)
- AEC-Q101 qualified for automotive applications
- High forward current capability of up to 375 mA
- Low forward voltage drop of 1.25 V at 150 mA
Applications
The BAW56SRAZ is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as infotainment systems, safety systems, and power management.
- General-purpose switching: Ideal for high-speed switching applications in consumer electronics, industrial control systems, and telecommunications.
- Power management: Used in power supply circuits, voltage regulators, and other power management modules.
- Consumer electronics: Suitable for use in mobile devices, wearables, and other consumer electronic products.
Q & A
- What is the reverse recovery time of the BAW56SRAZ diode?
The reverse recovery time (trr) of the BAW56SRAZ is ≤ 4 ns.
- What is the maximum forward current rating of the BAW56SRAZ?
The maximum average forward current (IF) is 375 mA.
- What is the package type of the BAW56SRAZ?
The BAW56SRAZ is packaged in a DFN1412-6 (SOT1268) ultra small SMD plastic package.
- Is the BAW56SRAZ AEC-Q101 qualified?
Yes, the BAW56SRAZ is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the maximum operating temperature of the BAW56SRAZ?
The maximum operating temperature is 150°C.
- What is the forward voltage drop of the BAW56SRAZ at 150 mA?
The forward voltage drop (VF) at 150 mA is 1.25 V.
- What is the reverse leakage current of the BAW56SRAZ at 80 V?
The reverse leakage current (IR) at 80 V is 500 nA.
- What is the capacitance of the BAW56SRAZ?
The capacitance (Cd) is ≤ 2 pF.
- Is the BAW56SRAZ RoHS compliant?
Yes, the BAW56SRAZ is RoHS compliant.
- What are the typical applications of the BAW56SRAZ?
The BAW56SRAZ is used in automotive systems, general-purpose switching, power management, and consumer electronics.
