BAS16LSYL
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Nexperia USA Inc. BAS16LSYL

Manufacturer No:
BAS16LSYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA 2DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L is a high-speed switching diode from Nexperia, designed for applications requiring fast switching times and low forward voltage drop. Encapsulated in a leadless ultra-small SOD882 Surface-Mounted Device (SMD) plastic package, this diode is ideal for space-constrained designs. The BAS16L is part of the broader BAS16 series, which includes various configurations to suit different application needs.

Key Specifications

ParameterSymbolMinMaxUnit
Reverse VoltageVR--100V
Reverse CurrentIR--0.5μA
Forward CurrentIF--215mA
Non-Repetitive Peak Forward CurrentIFSM--4A
Forward Voltage DropVF--1000mV @ IF=50mA
Reverse Recovery Timetrr--4ns
Diode CapacitanceCd--1.5pF @ f=1MHz, VR=0V
Junction TemperatureTj--150°C
Ambient TemperatureTamb-65-150°C
Storage TemperatureTstg-65-150°C

Key Features

  • High-speed switching capability with a reverse recovery time of 4 ns.
  • Low forward voltage drop of up to 1000 mV at 50 mA.
  • Encapsulated in a leadless ultra-small SOD882 package, ideal for space-constrained designs.
  • Non-repetitive peak forward current of up to 4 A for short-duration pulses.
  • Low diode capacitance of 1.5 pF at 1 MHz and 0 V reverse voltage.
  • RoHS compliant and Pb-free package.

Applications

The BAS16L is suitable for a wide range of applications across various industries, including:

  • Automotive systems: For high-speed switching and signal processing.
  • Industrial control systems: Where fast switching times and low voltage drops are critical.
  • Consumer electronics: In devices requiring compact and efficient diode solutions.
  • Power supplies: For rectification and switching applications.
  • Communication devices: For signal processing and switching.

Q & A

  1. What is the maximum reverse voltage of the BAS16L?
    The maximum reverse voltage of the BAS16L is 100 V.
  2. What is the typical forward current of the BAS16L?
    The typical forward current of the BAS16L is up to 215 mA.
  3. What is the reverse recovery time of the BAS16L?
    The reverse recovery time of the BAS16L is up to 4 ns.
  4. What is the package type of the BAS16L?
    The BAS16L is encapsulated in a leadless ultra-small SOD882 Surface-Mounted Device (SMD) plastic package.
  5. Is the BAS16L RoHS compliant?
    Yes, the BAS16L is RoHS compliant and Pb-free.
  6. What is the maximum junction temperature of the BAS16L?
    The maximum junction temperature of the BAS16L is 150 °C.
  7. What is the non-repetitive peak forward current of the BAS16L?
    The non-repetitive peak forward current of the BAS16L is up to 4 A for short-duration pulses.
  8. What is the diode capacitance of the BAS16L?
    The diode capacitance of the BAS16L is 1.5 pF at 1 MHz and 0 V reverse voltage.
  9. In which industries is the BAS16L commonly used?
    The BAS16L is commonly used in automotive, industrial, consumer electronics, power supplies, and communication devices.
  10. Is the BAS16L suitable for high-speed switching applications?
    Yes, the BAS16L is designed for high-speed switching applications with its fast reverse recovery time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:DFN1006BD-2
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS16LSYL BAS116LSYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 85 V
Current - Average Rectified (Io) 215mA (DC) 325mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 3 µs
Current - Reverse Leakage @ Vr 500 nA @ 80 V 5 nA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 SOD-882
Supplier Device Package DFN1006BD-2 DFN1006BD-2
Operating Temperature - Junction 150°C 150°C

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