BAS16LS-QYL
  • Share:

Nexperia USA Inc. BAS16LS-QYL

Manufacturer No:
BAS16LS-QYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BAS16LS-Q/SOD882BD/XSON2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16LS-QYL is a high-speed switching diode manufactured by Nexperia USA Inc. This diode is encapsulated in a leadless ultra small SOD882BD (DFN1006BD-2) Surface-Mounted Device (SMD) plastic package. It is designed for general-purpose switching and high-speed applications, offering low leakage current, low capacitance, and high switching speed. The BAS16LS-QYL is qualified according to AEC-Q101, making it suitable for use in automotive applications.

Key Specifications

ParameterValue
Type NumberBAS16LS-Q
PackageSOD882BD (DFN1006BD-2)
Size (mm)1 x 0.6 x 0.47
Maximum Reverse Voltage (VR)100 V
Repetitive Peak Reverse Voltage (VRRM)100 V
Maximum Forward Current (IF)215 mA
Maximum Forward Voltage Drop (VF)1250 mV @ IF = 150 mA
Maximum Reverse Current (IR)500 nA @ VR = 80 V
Maximum Switching Time (trr)4 ns
Maximum Capacitance (Cd)1.5 pF
Automotive QualifiedYes (AEC-Q101)
Operating Temperature Range-45°C to +125°C

Key Features

  • High switching speed: trr ≤ 4 ns
  • Low leakage current
  • Low capacitance
  • Low forward voltage drop
  • Qualified according to AEC-Q101 for automotive applications
  • Leadless ultra small SOD882BD (DFN1006BD-2) package
  • High temperature soldering profile: 260°C/10s

Applications

The BAS16LS-QYL is versatile and can be used in various applications across different industries, including:

  • Automotive: Suitable for road vehicle applications due to AEC-Q101 qualification.
  • Industrial: General-purpose switching and high-speed applications.
  • Consumer Electronics: Mobile, computing, and wearables.
  • Power Applications: Where high switching speed and low leakage current are required.

Q & A

  1. What is the maximum reverse voltage of the BAS16LS-QYL?
    The maximum reverse voltage (VR) is 100 V.
  2. What is the repetitive peak reverse voltage of the BAS16LS-QYL?
    The repetitive peak reverse voltage (VRRM) is 100 V.
  3. What is the maximum forward current of the BAS16LS-QYL?
    The maximum forward current (IF) is 215 mA.
  4. What is the maximum forward voltage drop of the BAS16LS-QYL?
    The maximum forward voltage drop (VF) is 1250 mV at IF = 150 mA.
  5. What is the switching time of the BAS16LS-QYL?
    The maximum switching time (trr) is 4 ns.
  6. Is the BAS16LS-QYL qualified for automotive applications?
    Yes, it is qualified according to AEC-Q101.
  7. What is the operating temperature range of the BAS16LS-QYL?
    The operating temperature range is -45°C to +125°C.
  8. What package type does the BAS16LS-QYL use?
    The BAS16LS-QYL is encapsulated in a leadless ultra small SOD882BD (DFN1006BD-2) package.
  9. What are the key features of the BAS16LS-QYL?
    Key features include high switching speed, low leakage current, low capacitance, and low forward voltage drop.
  10. Where can I purchase the BAS16LS-QYL?
    You can purchase the BAS16LS-QYL from Nexperia’s official website, as well as from authorized distributors such as Digi-Key, Mouser, and X-On Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:DFN1006BD-2
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.27
2,187

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS16LS-QYL BAS116LS-QYL BAS16L-QYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 75 V 100 V
Current - Average Rectified (Io) 215mA (DC) 325mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 3 µs 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 5 nA @ 75 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-882 SOD-882 SOD-882
Supplier Device Package DFN1006BD-2 DFN1006BD-2 DFN1006-2
Operating Temperature - Junction 150°C 150°C 150°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN