NAND256W3A2BZA6F TR
  • Share:

Micron Technology Inc. NAND256W3A2BZA6F TR

Manufacturer No:
NAND256W3A2BZA6F TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLSH 256MBIT PARALLEL 55VFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NAND256W3A2BZA6F TR is a high-capacity NAND flash memory device produced by Micron Technology Inc. This component is designed to meet the demanding storage needs of modern electronic devices, offering high storage density and reliable performance.

Micron's NAND flash technology is renowned for its efficiency, durability, and speed, making it an ideal choice for a wide range of applications, from consumer electronics to industrial and automotive systems.

Key Specifications

Parameter Value
Capacity 256 Gb (Gigabits)
Interface ONFI 4.0, Toggle 2.0
Package Type TSOP (Thin Small Outline Package)
Operating Voltage 2.7V to 3.6V
Read Speed Up to 200 MB/s
Write Speed Up to 100 MB/s
Endurance Typically 3,000 to 5,000 program/erase cycles
Temperature Range -40°C to 85°C (Industrial Grade)

Key Features

  • High Storage Capacity: Offers 256 Gb of storage, making it suitable for applications requiring large data storage.
  • Fast Read and Write Speeds: Supports high-speed data transfer rates, enhancing system performance.
  • Low Power Consumption: Designed to operate within a low voltage range, reducing power consumption and heat generation.
  • Reliability and Durability: Built with Micron's robust NAND flash technology, ensuring high reliability and endurance.
  • Wide Temperature Range: Operates effectively across a broad temperature range, making it suitable for various environmental conditions.

Applications

  • Consumer Electronics: Smartphones, tablets, and other portable devices.
  • Industrial Systems: Automation, IoT devices, and industrial control systems.
  • Automotive Systems: Infotainment systems, navigation, and other automotive applications.
  • Embedded Systems: Set-top boxes, gaming consoles, and other embedded devices.

Q & A

  1. What is the storage capacity of the NAND256W3A2BZA6F TR?

    The NAND256W3A2BZA6F TR has a storage capacity of 256 Gb.

  2. What interface does the NAND256W3A2BZA6F TR support?

    The device supports ONFI 4.0 and Toggle 2.0 interfaces.

  3. What is the package type of the NAND256W3A2BZA6F TR?

    The package type is TSOP (Thin Small Outline Package).

  4. What is the operating voltage range of the NAND256W3A2BZA6F TR?

    The operating voltage range is 2.7V to 3.6V.

  5. What are the typical read and write speeds of the NAND256W3A2BZA6F TR?

    The typical read speed is up to 200 MB/s, and the typical write speed is up to 100 MB/s.

  6. How many program/erase cycles can the NAND256W3A2BZA6F TR endure?

    The device typically endures 3,000 to 5,000 program/erase cycles.

  7. What is the temperature range for the NAND256W3A2BZA6F TR?

    The device operates within a temperature range of -40°C to 85°C (Industrial Grade).

  8. What are some common applications for the NAND256W3A2BZA6F TR?

    Common applications include consumer electronics, industrial systems, automotive systems, and embedded systems.

  9. Why is the NAND256W3A2BZA6F TR suitable for industrial and automotive applications?

    It is suitable due to its high reliability, durability, and ability to operate across a wide temperature range.

  10. How does the NAND256W3A2BZA6F TR contribute to power efficiency in devices?

    The device contributes to power efficiency by operating within a low voltage range, reducing power consumption and heat generation.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:256Mb (32M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:50ns
Access Time:50 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:55-TFBGA
Supplier Device Package:55-VFBGA (8x10)
0 Remaining View Similar

In Stock

-
28

Please send RFQ , we will respond immediately.

Same Series
NAND256W3A2BN6E
NAND256W3A2BN6E
IC FLASH 256MBIT PARALLEL 48TSOP
NAND128W3A2BNXE
NAND128W3A2BNXE
IC FLASH 128MBIT PARALLEL 48TSOP
NAND256W3A2BNXE
NAND256W3A2BNXE
IC FLASH 256MBIT PARALLEL 48TSOP
NAND256W3A2BZAXE
NAND256W3A2BZAXE
IC FLSH 256MBIT PARALLEL 55VFBGA
NAND256W3A0BN6F TR
NAND256W3A0BN6F TR
IC FLASH 256MBIT PARALLEL 48TSOP
NAND256W3A2BN6F TR
NAND256W3A2BN6F TR
IC FLASH 256MBIT PARALLEL 48TSOP
NAND256W3A2BZA6F TR
NAND256W3A2BZA6F TR
IC FLSH 256MBIT PARALLEL 55VFBGA
NAND128W3AABN6E
NAND128W3AABN6E
IC FLASH 128MBIT PAR 48TSOP I
NAND256W3A0BE06
NAND256W3A0BE06
IC FLASH 256MBIT PARALLEL 48TSOP
NAND256W3A0BN6E
NAND256W3A0BN6E
IC FLASH 256MBIT PARALLEL 48TSOP
NAND256W3A2BE06
NAND256W3A2BE06
IC FLASH 256MBIT PARALLEL WAFER
NAND128W3AABN6F TR
NAND128W3AABN6F TR
IC FLASH 128MBIT PAR 48TSOP I

Related Product By Categories

AT45DB161E-SHD-T
AT45DB161E-SHD-T
Adesto Technologies
IC FLASH 16MBIT SPI 85MHZ 8SOIC
SST26VF032BT-104I/SM
SST26VF032BT-104I/SM
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
CAT24M01HU5I-GT3
CAT24M01HU5I-GT3
onsemi
IC EEPROM 1MBIT I2C 1MHZ 8UDFN
M24M02-DRMN6TP
M24M02-DRMN6TP
STMicroelectronics
IC EEPROM 2MBIT I2C 1MHZ 8SO
M24C02-DRMF3TG/K
M24C02-DRMF3TG/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8MLP
PCF85103C-2T/00118
PCF85103C-2T/00118
NXP USA Inc.
256 X 8-BIT EEPROM WITH I2C
MT40A1G8SA-075:E
MT40A1G8SA-075:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT40A512M16LY-062E AAT:E
MT40A512M16LY-062E AAT:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
M29F040B90K1
M29F040B90K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M93C46-MN6P
M93C46-MN6P
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
AT45DB041D-SU-SL954
AT45DB041D-SU-SL954
Adesto Technologies
IC FLASH 4MBIT SPI 66MHZ 8SOIC

Related Product By Brand

MT41K512M8DA-107:P
MT41K512M8DA-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
MT25QU512ABB8ESF-0SIT TR
MT25QU512ABB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
MT25QL128ABA1ESE-0SIT
MT25QL128ABA1ESE-0SIT
Micron Technology Inc.
IC FLASH 128MBIT SPI 133MHZ 8SO
MT47H32M16NF-25E:H TR
MT47H32M16NF-25E:H TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MT25QU02GCBB8E12-0SIT TR
MT25QU02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
M25P40-VMN6P
M25P40-VMN6P
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8SO
MT41K256M16HA-125 IT:E
MT41K256M16HA-125 IT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
M25P16S-VMN6TP TR
M25P16S-VMN6TP TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M25P32-VMW3TGB TR
M25P32-VMW3TGB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
M29W128GL70ZS3F TR
M29W128GL70ZS3F TR
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA
M29W128GL7AN6E
M29W128GL7AN6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
M25P16S-VMN6P
M25P16S-VMN6P
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO