MT53D512M32D2DS-053 AUT:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 AUT:D

Manufacturer No:
MT53D512M32D2DS-053 AUT:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 16GBIT 1.866GHZ 200WFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 AUT:D is a high-performance DRAM chip manufactured by Micron Technology Inc. This component is specifically designed for mobile and automotive applications, offering a balance of high-density storage, low power consumption, and high-speed data access.

Introduced on October 31, 2017, this DRAM chip is part of the LPDDR4 SDRAM family, which is known for its energy efficiency and high data transfer rates. The chip is packaged in a 200-pin WFBGA (Wafer-Level Fine-Pitch Ball Grid Array) and is compliant with RoHS standards, ensuring environmental sustainability.

Key Specifications

Specification Value
Memory Type Volatile, DRAM
Memory Format SDRAM - Mobile LPDDR4
Memory Size 16Gb (512M x 32)
Clock Frequency 1.866 GHz
Operating Voltage 0.6V, 1.1V
Operating Temperature Range -40°C to 125°C
Mounting Type Surface Mount
Package / Case 200-pin WFBGA

Key Features

  • High Density: Offers 16Gb of storage capacity in a compact form factor.
  • Low Power Consumption: Operates at low voltages (0.6V, 1.1V) to reduce energy usage in mobile and embedded devices.
  • High Data Rate: Supports data rates of up to 3200 Mbps for fast and responsive performance.
  • Wide Temperature Range: Suitable for operation in harsh environmental conditions with a temperature range of -40°C to 125°C.
  • On-Die Termination (ODT): Improves signal integrity and reduces system noise.

Applications

The MT53D512M32D2DS-053 AUT:D is designed for various applications that require high-density, low-power memory solutions. These include:

  • Mobile Devices: Smartphones, tablets, and other mobile devices benefit from its high-speed data access and low power consumption.
  • Automotive Systems: Used in automotive electronics for its robust performance and wide temperature operating range.
  • Networking Equipment: Suitable for networking devices and servers to handle high volumes of data traffic efficiently.
  • Embedded Systems: Ideal for IoT devices and other embedded systems with limited power budgets.

Q & A

  1. What is the memory type of the MT53D512M32D2DS-053 AUT:D?

    The memory type is Volatile DRAM, specifically Mobile LPDDR4 SDRAM.

  2. What is the memory size and organization of this component?

    The memory size is 16Gb, organized as 512M x 32.

  3. What is the operating voltage of the MT53D512M32D2DS-053 AUT:D?

    The operating voltage is 0.6V and 1.1V.

  4. What is the clock frequency of this DRAM chip?

    The clock frequency is 1.866 GHz.

  5. What is the operating temperature range of the MT53D512M32D2DS-053 AUT:D?

    The operating temperature range is -40°C to 125°C.

  6. What package type is used for the MT53D512M32D2DS-053 AUT:D?

    The package type is a 200-pin WFBGA (Wafer-Level Fine-Pitch Ball Grid Array).

  7. Is the MT53D512M32D2DS-053 AUT:D RoHS compliant?
  8. What are some of the key applications for this component?
  9. What are the advantages of using the MT53D512M32D2DS-053 AUT:D?
  10. Are there any specific design considerations for using the MT53D512M32D2DS-053 AUT:D?

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 125°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

$38.68
15

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number MT53D512M32D2DS-053 AUT:D MT53D512M32D2DS-053 AAT:D MT53D512M32D2DS-053 AIT:D
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active
Memory Type Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Size 16Gb (512M x 32) 16Gb (512M x 32) 16Gb (512M x 32)
Memory Interface - - -
Clock Frequency 1.866 GHz 1.866 GHz 1.866 GHz
Write Cycle Time - Word, Page - - -
Access Time - - -
Voltage - Supply 1.1V 1.1V 1.1V
Operating Temperature -40°C ~ 125°C (TC) -40°C ~ 105°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 200-WFBGA 200-WFBGA 200-WFBGA
Supplier Device Package 200-WFBGA (10x14.5) 200-WFBGA (10x14.5) 200-WFBGA (10x14.5)

Related Product By Categories

M24128-DFCS6TP/K
M24128-DFCS6TP/K
STMicroelectronics
IC EEPROM 128KBIT I2C 8WLCSP
MT29F2G16ABAEAWP-AIT:E TR
MT29F2G16ABAEAWP-AIT:E TR
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I
CAT25020YI-GT3
CAT25020YI-GT3
onsemi
IC EEPROM 2KBIT SPI 20MHZ 8TSSOP
M24C64-WDW6TP
M24C64-WDW6TP
STMicroelectronics
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP
MT25QL01GBBB8ESF-0AAT
MT25QL01GBBB8ESF-0AAT
Micron Technology Inc.
IC FLASH 1GBIT SPI 133MHZ 16SO
M93C46-MN6T
M93C46-MN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
AT24C02BN-SH-T
AT24C02BN-SH-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8SOIC
M27C4002-90C1
M27C4002-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
MT41K256M16HA-125 M AIT:E
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT40A1G16RC-062E:B TR
MT40A1G16RC-062E:B TR
Micron Technology Inc.
IC DRAM 16GBIT PARALLEL 96FBGA
CAT25128VI-GT3D
CAT25128VI-GT3D
onsemi
IC EEPROM 128KB SERIAL SPI 8TSSO

Related Product By Brand

MT25QU512ABB8ESF-0SIT TR
MT25QU512ABB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
MT25QL512ABB8ESF-0SIT TR
MT25QL512ABB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 16SOP2
MT25QU512ABB1EW9-0SIT TR
MT25QU512ABB1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
MT41K128M16JT-125 AAT:K TR
MT41K128M16JT-125 AAT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QU512ABB1EW9-0SIT
MT25QU512ABB1EW9-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
M29W400BB90N6
M29W400BB90N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W160ET70ZA6F TR
M29W160ET70ZA6F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TFBGA
M50FW080N5
M50FW080N5
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
M29W800DB45ZE6E
M29W800DB45ZE6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M45PE20-VMN6TP TR
M45PE20-VMN6TP TR
Micron Technology Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
MT41K128M16JT-125 M:K TR
MT41K128M16JT-125 M:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AT:P
MT41K256M16TW-107 AT:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA