MT53D512M32D2DS-053 AIT:D
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Micron Technology Inc. MT53D512M32D2DS-053 AIT:D

Manufacturer No:
MT53D512M32D2DS-053 AIT:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 16GBIT 1866MHZ 200WFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MT53D512M32D2DS-053 AIT:D is a high-performance DRAM chip designed by Micron Technology Inc. This component is optimized for mobile and automotive applications, offering excellent speed and low power consumption. It is part of the LPDDR4 SDRAM family, known for its efficiency and reliability in demanding environments. The chip is packaged in a 200-pin WFBGA (Wafer-Level Fine-Pitch Ball Grid Array) package, which provides a compact and reliable solution for integration into various devices.

Key Specifications

Parameter Value
Memory Type LPDDR4 SDRAM
Memory Size 16 Gbit (512M x 32)
Operating Voltage 1.1V / 1.8V
Maximum Clock Frequency 1.866 GHz
Operating Temperature -40°C to 95°C
Package/Case 200-WFBGA (10x14.5 mm)
Data Bus Width 32 bit
Moisture Sensitivity Level (MSL) 3 (168 Hours)
RoHS Status ROHS3 Compliant
AEC-Q100 Compliance Yes

Key Features

  • High-Speed Performance: The MT53D512M32D2DS-053 AIT:D offers high-speed operations, making it suitable for demanding mobile and automotive applications.
  • Low Power Consumption: Operating at 1.1V or 1.8V, this DRAM chip reduces power consumption and heat generation, prolonging battery life in mobile devices.
  • AEC-Q100 Compliance: This component meets the automotive industry's quality and reliability standards, ensuring it is suitable for use in harsh automotive environments.
  • Compact Packaging: The 200-pin WFBGA package provides a compact and reliable solution for integration into mobile and automotive systems.

Applications

  • Mobile Devices: Suitable for smartphones, tablets, and laptops where high-speed and low-power operations are critical.
  • Automotive Systems: Can be used in infotainment systems, navigation systems, and other automotive applications requiring high-performance memory solutions.

Q & A

  1. What is the memory capacity of the MT53D512M32D2DS-053 AIT:D?

    The memory capacity is 16 Gbit, organized as 512M x 32.

  2. What is the operating voltage of this DRAM chip?

    The operating voltage is 1.1V or 1.8V.

  3. What is the maximum clock frequency of the MT53D512M32D2DS-053 AIT:D?

    The maximum clock frequency is 1.866 GHz.

  4. Is the MT53D512M32D2DS-053 AIT:D compliant with automotive industry standards?

    Yes, it meets the AEC-Q100 compliance standards.

  5. What is the package type of this DRAM chip?

    The package type is 200-pin WFBGA.

  6. What are the typical applications of the MT53D512M32D2DS-053 AIT:D?

    It is used in mobile devices such as smartphones, tablets, and laptops, as well as in automotive systems like infotainment and navigation systems.

  7. Does the MT53D512M32D2DS-053 AIT:D comply with RoHS regulations?

    Yes, it is ROHS3 compliant.

  8. What is the moisture sensitivity level (MSL) of this component?

    The MSL is 3 (168 Hours).

  9. What are the advantages of using the MT53D512M32D2DS-053 AIT:D?

    High-speed performance, low power consumption, and compliance with automotive industry standards.

  10. Are there any potential disadvantages of using this DRAM chip?

    It may have limited availability and could be more expensive than other memory solutions due to its high-performance capabilities and automotive-grade quality.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
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Similar Products

Part Number MT53D512M32D2DS-053 AIT:D MT53D512M32D2DS-053 AUT:D MT53D512M32D2DS-053 AAT:D
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active
Memory Type Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Size 16Gb (512M x 32) 16Gb (512M x 32) 16Gb (512M x 32)
Memory Interface - - -
Clock Frequency 1.866 GHz 1.866 GHz 1.866 GHz
Write Cycle Time - Word, Page - - -
Access Time - - -
Voltage - Supply 1.1V 1.1V 1.1V
Operating Temperature -40°C ~ 95°C (TC) -40°C ~ 125°C (TC) -40°C ~ 105°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 200-WFBGA 200-WFBGA 200-WFBGA
Supplier Device Package 200-WFBGA (10x14.5) 200-WFBGA (10x14.5) 200-WFBGA (10x14.5)

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