MT41K256M16TW-107:P TR
  • Share:

Micron Technology Inc. MT41K256M16TW-107:P TR

Manufacturer No:
MT41K256M16TW-107:P TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 4GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT41K256M16TW-107:P TR is a high-performance DDR3L SDRAM chip manufactured by Micron Technology Inc. This component is designed to provide high-density memory solutions with low power consumption, making it ideal for a wide range of applications, including industrial, automotive, and consumer electronics. Introduced on November 14, 2013, this chip has been a reliable choice for systems requiring fast and efficient memory operations.

Key Specifications

Parameter Value
Memory Type Volatile, DRAM
Memory Size 4 Gbit (256M x 16)
Memory Interface Parallel
Clock Frequency 933 MHz
Access Time 20 ns
Supply Voltage 1.283 V ~ 1.45 V
Operating Temperature -40°C ~ 95°C
Package / Case 96-TFBGA (8x14)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
RoHS Status Compliant

Key Features

  • High-Density Memory: Offers 4 Gbit of memory with a 256M x 16 configuration, making it suitable for applications requiring large memory capacity.
  • Low Power Consumption: Operates within a voltage range of 1.283 V to 1.45 V, which helps in extending battery life and reducing power consumption.
  • High-Speed Operation: Supports a clock frequency of 933 MHz and an access time of 20 ns, ensuring fast data transfer and processing.
  • Wide Operating Temperature Range: Can operate in temperatures from -40°C to 95°C, making it reliable in various environmental conditions.
  • Compact Packaging: Comes in a 96-TFBGA package, which is compact and suitable for surface mount applications.

Applications

  • Industrial Electronics: Suitable for industrial control systems, automation, and other high-reliability applications.
  • Automotive Systems: Can be used in automotive infotainment, navigation, and other in-vehicle systems.
  • Consumer Electronics: Ideal for smartphones, tablets, laptops, and other consumer devices requiring high-performance memory.
  • Server and Data Center Applications: Used in server memory modules to enhance performance and efficiency.

Q & A

  1. What is the memory size of the MT41K256M16TW-107:P TR?

    The memory size is 4 Gbit, configured as 256M x 16.

  2. What is the clock frequency of this DRAM chip?

    The clock frequency is 933 MHz.

  3. What is the operating voltage range of this component?

    The operating voltage range is from 1.283 V to 1.45 V.

  4. What is the package type and size of the MT41K256M16TW-107:P TR?

    The package type is 96-TFBGA, with dimensions of 8x14 mm.

  5. Is the MT41K256M16TW-107:P TR RoHS compliant?
  6. What is the access time of this DRAM chip?

    The access time is 20 ns.

  7. What is the operating temperature range of the MT41K256M16TW-107:P TR?

    The operating temperature range is from -40°C to 95°C.

  8. What type of mounting does this component use?
  9. Is the MT41K256M16TW-107:P TR suitable for industrial applications?
  10. Where can I find the datasheet for the MT41K256M16TW-107:P TR?

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR3L
Memory Size:4Gb (256M x 16)
Memory Interface:Parallel
Clock Frequency:933 MHz
Write Cycle Time - Word, Page:- 
Access Time:20 ns
Voltage - Supply:1.283V ~ 1.45V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (8x14)
0 Remaining View Similar

In Stock

$8.13
103

Please send RFQ , we will respond immediately.

Same Series
MT41K512M8DA-107:P TR
MT41K512M8DA-107:P TR
IC DRAM 4GBIT PARALLEL 78FBGA

Related Product By Categories

AS4C32M16SB-7TINTR
AS4C32M16SB-7TINTR
Alliance Memory, Inc.
IC DRAM 512MBIT PAR 54TSOP II
M48Z58Y-70PC1
M48Z58Y-70PC1
STMicroelectronics
IC NVSRAM 64KBIT PAR 28PCDIP
M95010-RMN6TP
M95010-RMN6TP
STMicroelectronics
IC EEPROM 1KBIT SPI 20MHZ 8SO
MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc.
IC FLASH 2GBIT SPI 8UPDFN
AT24C02A-10PI-2.5
AT24C02A-10PI-2.5
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M27C512-12B1
M27C512-12B1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 28DIP
AT24C02AN-10SU-1.8-T
AT24C02AN-10SU-1.8-T
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C2001-12C1
M27C2001-12C1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32PLCC
M24C64-WBN6P
M24C64-WBN6P
STMicroelectronics
IC EEPROM 64KBIT I2C 1MHZ 8DIP
M29W640GH70NA6E
M29W640GH70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P80-VMN3PB
M25P80-VMN3PB
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M29W128GL7AZS6E
M29W128GL7AZS6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA

Related Product By Brand

MT29F1G08ABAEAWP-IT:E
MT29F1G08ABAEAWP-IT:E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP I
MT48LC16M16A2P-6A IT:G TR
MT48LC16M16A2P-6A IT:G TR
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT40A512M16TB-062E:R
MT40A512M16TB-062E:R
Micron Technology Inc.
MOD DRAM 8GBIT PARALLEL 96FBGA
MT53D1024M32D4DT-046 AIT:D
MT53D1024M32D4DT-046 AIT:D
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
MT25QL512ABB1EW9-0SIT
MT25QL512ABB1EW9-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
NAND128W3A2BN6E
NAND128W3A2BN6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 48TSOP
M28W160CB90N6
M28W160CB90N6
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M25P40-VMW6TGB TR
M25P40-VMW6TGB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M25P10-AVMN6PYA
M25P10-AVMN6PYA
Micron Technology Inc.
IC FLASH 1MBIT SPI 50MHZ 8SO
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT53D1024M32D4DT-046 AUT:E
MT53D1024M32D4DT-046 AUT:E
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA