Overview
The MT41K256M16HA-125:E TR, produced by Micron Technology Inc., is a 4Gb DDR3L SDRAM component. This memory chip is part of the DDR3L family, which is a low-voltage version of the DDR3 SDRAM, operating at 1.35V. It is designed to be backward compatible with 1.5V DDR3 applications, enhancing its versatility in various system designs. The component is packaged in a 96-ball Fine-Pitch Ball Grid Array (FBGA) with dimensions of 9mm x 14mm, making it suitable for surface mount applications. Introduced in 2011, this component has been widely used in commercial and industrial environments due to its robust specifications and compliance with industry standards such as EU RoHS.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number | MT41K256M16HA-125:E TR |
| Memory Type | Volatile, DRAM |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Supply Voltage | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (Commercial), -40°C ~ 95°C (Industrial) |
| Package Type | 96-FBGA (9mm x 14mm) |
| Clock Frequency | 800MHz |
| Access Time | 13.75ns |
| Number of Internal Banks | 8 |
| Refresh Cycles | 64ms, 8192-cycle refresh at 0°C to +85°C; 32ms at +85°C to +95°C |
Key Features
- Low voltage operation: VDD = VDDQ = 1.35V (1.283–1.45V), backward compatible with 1.5V ±0.075V DDR3 applications.
- Differential bidirectional data strobe and differential clock inputs (CK, CK#).
- 8n-bit prefetch architecture and 8 internal banks.
- Programmable CAS (READ) latency (CL), CAS (WRITE) latency (CWL), and posted CAS additive latency (AL).
- Fixed burst length (BL) of 8 and burst chop (BC) of 4, with selectable BC4 or BL8 on-the-fly (OTF).
- Self refresh mode, automatic self refresh (ASR), and write leveling).
- Multipurpose register and output driver calibration options).
Applications
The MT41K256M16HA-125:E TR is widely used in various applications requiring high-density, low-power memory solutions. These include:
- Server and data center systems where low power consumption is critical.
- Embedded systems, such as industrial control systems and network devices.
- Consumer electronics, including gaming consoles and high-performance computing devices.
- Automotive systems, particularly those requiring robust and reliable memory under varying temperatures.
Q & A
- What is the memory size of the MT41K256M16HA-125:E TR?
The memory size is 4Gb, organized as 256M x 16).
- What is the operating voltage of this component?
The operating voltage is 1.283V to 1.45V).
- Is the MT41K256M16HA-125:E TR backward compatible with DDR3?
- What is the package type of this component?
- What are the operating temperature ranges for this component?
- What is the clock frequency of the MT41K256M16HA-125:E TR?
- How many internal banks does this component have?
- What is the access time of this component?
- Does the MT41K256M16HA-125:E TR support self refresh mode?
- Is the MT41K256M16HA-125:E TR compliant with EU RoHS regulations?
