Overview
The MT40A512M16LY-062E AIT:E is a DDR4 SDRAM component manufactured by Micron Technology Inc. This dynamic random access memory (DRAM) is designed to meet the high-performance requirements of modern computing and storage systems. With its 8Gbit density and 512M x 16bit memory configuration, it offers robust memory capabilities for a variety of applications.
Key Specifications
| Parameter | Value |
|---|---|
| DRAM Type | DDR4 SDRAM |
| DRAM Density | 8Gbit |
| Memory Configuration | 512M x 16bit |
| Clock Frequency | 1.6 GHz |
| Memory Case Style | 96-Pin TFBGA |
| No. of Pins | 96 |
| Supply Voltage Nom | 1.2V ±60mV |
| Access Time | 625 ps |
| Operating Temperature Range | -40°C to 105°C |
| RoHS Compliance | Yes, RoHS3 Compliant |
Key Features
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- Refresh time of 8192-cycle with varying times based on temperature range
- 16 internal banks (x8) and 8 internal banks (x16)
- 8n-bit prefetch architecture
- Programmable data strobe preambles and data strobe preamble training
- Command/Address latency (CAL) and multipurpose register read and write capability
- Write leveling, self refresh mode, and low-power auto self refresh (LPASR)
- Temperature controlled refresh (TCR) and fine granularity refresh
- Self refresh abort and maximum power saving
- Output driver calibration and nominal, park, and dynamic on-die termination (ODT)
- Data bus inversion (DBI) and command/address (CA) parity
- Databus write cyclic redundancy check (CRC) and per-DRAM addressability
- JEDEC JESD-79-4 compliant and sPPR and hPPR capability
Applications
The MT40A512M16LY-062E AIT:E DDR4 SDRAM is suitable for a wide range of applications, including:
- Server and data center systems
- High-performance computing
- Cloud storage and networking equipment
- Embedded systems requiring high memory density and speed
- Automotive and industrial systems that require robust and reliable memory solutions
Q & A
- What is the memory density of the MT40A512M16LY-062E AIT:E?
The memory density is 8Gbit with a configuration of 512M x 16bit. - What is the clock frequency of this DDR4 SDRAM?
The clock frequency is 1.6 GHz. - What is the package type and pin count of this component?
The package type is 96-Pin TFBGA. - What is the supply voltage range for this component?
The supply voltage is 1.2V ±60mV. - Is the MT40A512M16LY-062E AIT:E RoHS compliant?
Yes, it is RoHS3 compliant. - What are the key features of the refresh mechanism in this DDR4 SDRAM?
It includes features like self refresh mode, low-power auto self refresh (LPASR), temperature controlled refresh (TCR), and fine granularity refresh. - Does this component support data bus inversion and parity checks?
Yes, it supports data bus inversion (DBI) and command/address (CA) parity, as well as databus write cyclic redundancy check (CRC). - Is the MT40A512M16LY-062E AIT:E compliant with any specific industry standards?
Yes, it is JEDEC JESD-79-4 compliant. - What are some typical applications for this DDR4 SDRAM?
It is suitable for server and data center systems, high-performance computing, cloud storage, embedded systems, and automotive and industrial systems. - What is the operating temperature range for this component?
The operating temperature range is -40°C to 105°C.
