MT40A1G16RC-062E:B
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Micron Technology Inc. MT40A1G16RC-062E:B

Manufacturer No:
MT40A1G16RC-062E:B
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 16GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The Micron Technology MT40A1G16RC-062E:B is a high-performance DDR4 SDRAM component designed to meet the demanding memory requirements of modern computing and embedded systems. This 16 Gbit DRAM chip is configured as 1G x 16 bits and operates at a nominal supply voltage of 1.2V. It is housed in a 96-pin TFBGA package, ensuring compact and efficient integration into various applications.

Key Specifications

SpecificationValue
DRAM TypeDDR4 SDRAM
DRAM Density16 Gbit
Memory Configuration1G x 16 bits
Supply Voltage (VDD/VDDQ)1.2V ±60mV
Package Type96-Pin TFBGA
Operating Temperature0°C to 95°C
Clock FrequencyUp to 1.6 GHz
Access Time625 ps
Refresh Cycle64ms, 8192-cycle refresh up to 85°C; 32ms, 8192-cycle refresh at >85°C to 95°C
Internal Banks16 internal banks (x4, x8); 8 internal banks (x16)
Prefetch Architecture8n-bit prefetch
RoHS ComplianceYes

Key Features

  • On-die, internal, adjustable VREFDQ generation
  • 1.2V pseudo open-drain I/O
  • Programmable data strobe preambles and data strobe preamble training
  • Command/Address latency (CAL) and write leveling
  • Self refresh mode, low-power auto self refresh (LPASR), and temperature controlled refresh (TCR)
  • Fine granularity refresh and self refresh abort
  • Output driver calibration and nominal, park, and dynamic on-die termination (ODT)
  • Data bus inversion (DBI) for data bus and Command/Address (CA) parity
  • Databus write cyclic redundancy check (CRC) and per-DRAM addressability
  • Connectivity test and JEDEC JESD-79-4 compliance
  • sPPR and hPPR capability

Applications

The Micron Technology MT40A1G16RC-062E:B DDR4 SDRAM is suitable for a wide range of applications, including:

  • Server and data center systems
  • High-performance computing and cloud infrastructure
  • Embedded systems and IoT devices
  • Networking and telecommunications equipment
  • Consumer electronics such as laptops, desktops, and gaming consoles

Q & A

  1. What is the memory configuration of the MT40A1G16RC-062E:B?
    The memory configuration is 1G x 16 bits.
  2. What is the operating voltage of this DRAM chip?
    The operating voltage is 1.2V ±60mV.
  3. What is the package type of the MT40A1G16RC-062E:B?
    The package type is 96-Pin TFBGA.
  4. What are the key features of this DDR4 SDRAM?
    Key features include on-die VREFDQ generation, 1.2V pseudo open-drain I/O, programmable data strobe preambles, and various refresh modes.
  5. Is the MT40A1G16RC-062E:B RoHS compliant?
    Yes, it is RoHS compliant.
  6. What are the typical applications for this DRAM chip?
    Typical applications include server and data center systems, high-performance computing, embedded systems, and consumer electronics.
  7. What is the maximum operating temperature of the MT40A1G16RC-062E:B?
    The maximum operating temperature is 95°C.
  8. Does the MT40A1G16RC-062E:B support self refresh mode?
    Yes, it supports self refresh mode, low-power auto self refresh (LPASR), and temperature controlled refresh (TCR).
  9. What is the prefetch architecture of this DRAM chip?
    The prefetch architecture is 8n-bit prefetch.
  10. Is the MT40A1G16RC-062E:B compliant with JEDEC standards?
    Yes, it is compliant with JEDEC JESD-79-4 standards.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:16Gb (1G x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:15ns
Access Time:19 ns
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (10x13)
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