MT29F4G08ABADAWP-IT:D TR
  • Share:

Micron Technology Inc. MT29F4G08ABADAWP-IT:D TR

Manufacturer No:
MT29F4G08ABADAWP-IT:D TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLASH 4GBIT PARALLEL 48TSOP I
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT29F4G08ABADAWP-IT:D TR is a 4Gbit NAND flash memory chip manufactured by Micron Technology Inc. This component is designed to provide high-capacity NAND flash storage with a parallel memory interface. It operates within a supply voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP (Thin Small Outline Package) type 1, making it suitable for a variety of applications requiring reliable and efficient memory solutions.

Key Specifications

Specification Value
Memory Type Non-Volatile, NAND Flash
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Supply Voltage Range 2.7V to 3.6V
Operating Temperature Range -40°C to +85°C (Industrial)
Package Type 48-pin TSOP Type 1
Page Size (x8) 2112 bytes (2048 + 64 bytes)
Page Size (x16) 1056 words (1024 + 32 words)
Block Size 64 pages (128K + 4K bytes)
Device Size 4096 blocks
Read Cycle Time 25ns (Typical)
Program Cycle Time 200ns (Typical)
Erase Block Time 700ns (Typical)
Endurance 100,000 PROGRAM/ERASE cycles
Data Retention 10 years

Key Features

  • Single-Level Cell (SLC) Technology: Provides higher endurance and reliability compared to multi-level cell (MLC) technology.
  • Parallel Memory Interface: Supports high-speed data transfer.
  • Wide Operating Temperature Range: Suitable for industrial applications with a temperature range of -40°C to +85°C.
  • High Capacity: Offers 4Gb of NAND flash storage.
  • ONFI 1.0 Compliant: Adheres to the Open NAND Flash Interface (ONFI) 1.0 specification for compatibility and interoperability.
  • Internal Data Move Operations: Supports internal data move operations within the plane from which data is read.
  • Two-Plane Commands and Interleaved Die Operations: Enhances performance by allowing simultaneous operations on multiple planes.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental safety.

Applications

  • Embedded Systems: Suitable for use in various embedded systems requiring reliable and efficient memory solutions.
  • Industrial Applications: Ideal for industrial environments due to its wide operating temperature range and high reliability.
  • Consumer Electronics: Used in consumer electronics that require high-capacity and reliable flash memory.

Q & A

  1. What is the memory size of the MT29F4G08ABADAWP-IT:D TR?

    The memory size is 4Gb (512M x 8).

  2. What type of memory interface does this component use?

    The component uses a parallel memory interface.

  3. What is the operating temperature range of this component?

    The operating temperature range is -40°C to +85°C (Industrial).

  4. What is the package type of the MT29F4G08ABADAWP-IT:D TR?

    The package type is 48-pin TSOP Type 1.

  5. What is the endurance of this NAND flash memory?

    The endurance is 100,000 PROGRAM/ERASE cycles.

  6. Is the MT29F4G08ABADAWP-IT:D TR RoHS compliant?
  7. What is the data retention period of this component?

    The data retention period is 10 years.

  8. Does this component support internal data move operations?
  9. What is the typical read cycle time of the MT29F4G08ABADAWP-IT:D TR?

    The typical read cycle time is 25ns.

  10. What are some common applications of the MT29F4G08ABADAWP-IT:D TR?

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP I
0 Remaining View Similar

In Stock

$6.83
37

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MT29F4G08ABADAWP-IT:D TR MT29F4G08ABADAWP-ITX:D TR MT29F4G08ABADAWP-AT:D TR
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash
Technology FLASH - NAND FLASH - NAND FLASH - NAND
Memory Size 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (512M x 8)
Memory Interface Parallel Parallel Parallel
Clock Frequency - - -
Write Cycle Time - Word, Page - - -
Access Time - - -
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) 0°C ~ 70°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I 48-TSOP I 48-TSOP I

Related Product By Categories

W25Q32JVSSIQ TR
W25Q32JVSSIQ TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8SOIC
W25N01GVZEIG TR
W25N01GVZEIG TR
Winbond Electronics
IC FLASH 1GBIT SPI 104MHZ 8WSON
M48Z58Y-70PC1
M48Z58Y-70PC1
STMicroelectronics
IC NVSRAM 64KBIT PAR 28PCDIP
MX25L3233FM1I-08G
MX25L3233FM1I-08G
Macronix
IC FLASH 32MBIT SPI/QUAD 8SOP
MT41K128M16JT-125:K
MT41K128M16JT-125:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M29F010B70K6E
M29F010B70K6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M29W320DB70N6F TR
M29W320DB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
AT45DB321D-SU-SL955
AT45DB321D-SU-SL955
Adesto Technologies
IC FLASH 32MBIT SPI 66MHZ 8SOIC
DS2431P+W
DS2431P+W
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
CAT25640VI-GT3JN
CAT25640VI-GT3JN
onsemi
IC EEPROM 64KBIT SPI 20MHZ 8SOIC
PCA24S08AD,118
PCA24S08AD,118
NXP USA Inc.
IC EEPROM 8KBIT I2C 400KHZ 8SO

Related Product By Brand

MT53D512M32D2DS-053 AIT:D
MT53D512M32D2DS-053 AIT:D
Micron Technology Inc.
IC DRAM 16GBIT 1866MHZ 200WFBGA
MT40A512M16TB-062E:R
MT40A512M16TB-062E:R
Micron Technology Inc.
MOD DRAM 8GBIT PARALLEL 96FBGA
M29F800DB70N6T TR
M29F800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W320DB70ZE6F TR
M29W320DB70ZE6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TFBGA
M29W640GB70NA6E
M29W640GB70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P32-VME6TG TR
M25P32-VME6TG TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8VDFPN
M25P40-VMN3TP/X TR
M25P40-VMN3TP/X TR
Micron Technology Inc.
IC FLASH 4MBIT 50MHZ 8SO
M25P16-VMN6YPBA
M25P16-VMN6YPBA
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
MT41K256M16HA-125 V:E
MT41K256M16HA-125 V:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
M29F400FB55M32
M29F400FB55M32
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 44SO
MT41K256M16TW-107 V:P
MT41K256M16TW-107 V:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT53D1024M32D4DT-046 AUT:E
MT53D1024M32D4DT-046 AUT:E
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA