M29F800DB70N6E
  • Share:

Micron Technology Inc. M29F800DB70N6E

Manufacturer No:
M29F800DB70N6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 8MBIT PARALLEL 48TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29F800DB70N6E is a Parallel NOR Flash memory component manufactured by Micron Technology Inc. This device is designed for reliable code storage, including boot code, application code, operating system code, and execute-in-place (XIP) code. It is part of Micron's legacy storage solutions and is typically used in systems that require high-performance and low-power consumption.

Key Specifications

Parameter Value
Memory Type Parallel NOR Flash
Memory Size 8 Mbits (1 M x 8 / 512 K x 16)
Package Type TSOP48, PLCC32
Voltage Range 2.7V to 3.6V
Read Access Time Typically 70 ns
Write/Erase Cycles 100,000 cycles (minimum)
Data Retention 20 years (minimum)

Key Features

  • High-performance read and write operations.
  • Low power consumption, suitable for battery-powered devices.
  • Execute-in-place (XIP) capability for direct code execution from the flash memory.
  • Multiple package options including TSOP48 and PLCC32.
  • Wide voltage range (2.7V to 3.6V) for flexibility in system design.

Applications

  • Embedded systems requiring reliable code storage.
  • Industrial control systems and automation.
  • Consumer electronics such as set-top boxes and gaming consoles.
  • Automotive systems, including infotainment and navigation.
  • Medical devices and diagnostic equipment.

Q & A

  1. What is the primary function of the M29F800DB70N6E?

    The primary function is to provide reliable code storage for boot, application, OS, and execute-in-place (XIP) code.

  2. What are the common package types for this component?

    The common package types are TSOP48 and PLCC32.

  3. What is the voltage range for this device?

    The voltage range is 2.7V to 3.6V.

  4. What is the typical read access time for this component?

    The typical read access time is 70 ns.

  5. How many write/erase cycles can this device handle?

    The device can handle a minimum of 100,000 write/erase cycles.

  6. What is the data retention period for this flash memory?

    The data retention period is a minimum of 20 years.

  7. In which types of systems is this component commonly used?

    This component is commonly used in embedded systems, industrial control systems, consumer electronics, automotive systems, and medical devices.

  8. Does this component support execute-in-place (XIP) functionality?

    Yes, it supports execute-in-place (XIP) functionality.

  9. What are the benefits of using this component in battery-powered devices?

    The benefits include low power consumption, which is crucial for extending battery life in portable devices.

  10. Is this component suitable for high-performance applications?

    Yes, it is designed for high-performance read and write operations.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:8Mb (1M x 8, 512K x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:4.5V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP
0 Remaining View Similar

In Stock

-
124

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number M29F800DB70N6E M29F800DT70N6E M29F800DB70N6
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash
Technology FLASH - NOR FLASH - NOR FLASH - NOR
Memory Size 8Mb (1M x 8, 512K x 16) 8Mb (1M x 8, 512K x 16) 8Mb (1M x 8, 512K x 16)
Memory Interface Parallel Parallel Parallel
Clock Frequency - - -
Write Cycle Time - Word, Page 70ns 70ns 70ns
Access Time 70 ns 70 ns 70 ns
Voltage - Supply 4.5V ~ 5.5V 4.5V ~ 5.5V 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP 48-TSOP 48-TSOP

Related Product By Categories

CAT24C16WI-GT3
CAT24C16WI-GT3
onsemi
IC EEPROM 16KBIT I2C 8SOIC
MX25L12835FM2I-10G
MX25L12835FM2I-10G
Macronix
IC FLASH 128MBIT SPI 104MHZ 8SOP
M24C04-WMN6P
M24C04-WMN6P
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M27C256B-10B6
M27C256B-10B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
M24C04-WBN6P
M24C04-WBN6P
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8DIP
M29F040B90K1
M29F040B90K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M93C46-RDS6TG
M93C46-RDS6TG
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP
M29W320DB70N3F TR
M29W320DB70N3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
MT41K128M16JT-125 M:K TR
MT41K128M16JT-125 M:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K512M16HA-125:A TR
MT41K512M16HA-125:A TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
PCF85102C-2T/03:11
PCF85102C-2T/03:11
NXP USA Inc.
IC EEPROM 2KBIT I2C 100KHZ 8SO

Related Product By Brand

MT41K128M16JT-125 AIT:K TR
MT41K128M16JT-125 AIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT48LC16M16A2P-6A:G TR
MT48LC16M16A2P-6A:G TR
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT25QL256ABA1EW9-0SIT TR
MT25QL256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QU256ABA8ESF-0SIT TR
MT25QU256ABA8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
MT47H64M16NF-25E IT:M TR
MT47H64M16NF-25E IT:M TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MTFC8GAMALBH-AIT TR
MTFC8GAMALBH-AIT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
M28W160CB70N6E
M28W160CB70N6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29W640GL70NB6E
M29W640GL70NB6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
M25P05-AVMN6TP TR
M25P05-AVMN6TP TR
Micron Technology Inc.
IC FLASH 512KBIT SPI 50MHZ 8SO
NAND512W3A2CZA6E
NAND512W3A2CZA6E
Micron Technology Inc.
IC FLSH 512MBIT PARALLEL 63VFBGA
MT41K128M16JT-125 M AIT:K
MT41K128M16JT-125 M AIT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M25P80-VMC6G
M25P80-VMC6G
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8UFDFPN