M29F800DB70N6E
  • Share:

Micron Technology Inc. M29F800DB70N6E

Manufacturer No:
M29F800DB70N6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 8MBIT PARALLEL 48TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29F800DB70N6E is a Parallel NOR Flash memory component manufactured by Micron Technology Inc. This device is designed for reliable code storage, including boot code, application code, operating system code, and execute-in-place (XIP) code. It is part of Micron's legacy storage solutions and is typically used in systems that require high-performance and low-power consumption.

Key Specifications

Parameter Value
Memory Type Parallel NOR Flash
Memory Size 8 Mbits (1 M x 8 / 512 K x 16)
Package Type TSOP48, PLCC32
Voltage Range 2.7V to 3.6V
Read Access Time Typically 70 ns
Write/Erase Cycles 100,000 cycles (minimum)
Data Retention 20 years (minimum)

Key Features

  • High-performance read and write operations.
  • Low power consumption, suitable for battery-powered devices.
  • Execute-in-place (XIP) capability for direct code execution from the flash memory.
  • Multiple package options including TSOP48 and PLCC32.
  • Wide voltage range (2.7V to 3.6V) for flexibility in system design.

Applications

  • Embedded systems requiring reliable code storage.
  • Industrial control systems and automation.
  • Consumer electronics such as set-top boxes and gaming consoles.
  • Automotive systems, including infotainment and navigation.
  • Medical devices and diagnostic equipment.

Q & A

  1. What is the primary function of the M29F800DB70N6E?

    The primary function is to provide reliable code storage for boot, application, OS, and execute-in-place (XIP) code.

  2. What are the common package types for this component?

    The common package types are TSOP48 and PLCC32.

  3. What is the voltage range for this device?

    The voltage range is 2.7V to 3.6V.

  4. What is the typical read access time for this component?

    The typical read access time is 70 ns.

  5. How many write/erase cycles can this device handle?

    The device can handle a minimum of 100,000 write/erase cycles.

  6. What is the data retention period for this flash memory?

    The data retention period is a minimum of 20 years.

  7. In which types of systems is this component commonly used?

    This component is commonly used in embedded systems, industrial control systems, consumer electronics, automotive systems, and medical devices.

  8. Does this component support execute-in-place (XIP) functionality?

    Yes, it supports execute-in-place (XIP) functionality.

  9. What are the benefits of using this component in battery-powered devices?

    The benefits include low power consumption, which is crucial for extending battery life in portable devices.

  10. Is this component suitable for high-performance applications?

    Yes, it is designed for high-performance read and write operations.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:8Mb (1M x 8, 512K x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:4.5V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP
0 Remaining View Similar

In Stock

-
124

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number M29F800DB70N6E M29F800DT70N6E M29F800DB70N6
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash
Technology FLASH - NOR FLASH - NOR FLASH - NOR
Memory Size 8Mb (1M x 8, 512K x 16) 8Mb (1M x 8, 512K x 16) 8Mb (1M x 8, 512K x 16)
Memory Interface Parallel Parallel Parallel
Clock Frequency - - -
Write Cycle Time - Word, Page 70ns 70ns 70ns
Access Time 70 ns 70 ns 70 ns
Voltage - Supply 4.5V ~ 5.5V 4.5V ~ 5.5V 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP 48-TSOP 48-TSOP

Related Product By Categories

MT29F4G08ABADAWP-IT:D
MT29F4G08ABADAWP-IT:D
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 48TSOP I
M24128-DFCS6TP/K
M24128-DFCS6TP/K
STMicroelectronics
IC EEPROM 128KBIT I2C 8WLCSP
CAS24S128C4ATR
CAS24S128C4ATR
onsemi
IC MEM EEPROM 128KB I2C 4WLCSP
GD25Q32CSIGR
GD25Q32CSIGR
GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8SOP
SST26VF032BT-104I/SM
SST26VF032BT-104I/SM
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
M24C04-DRMN3TP/K
M24C04-DRMN3TP/K
STMicroelectronics
IC EEPROM 4KBIT I2C 1MHZ 8SO
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
AT24C02-10PI-1.8
AT24C02-10PI-1.8
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M93C46-MN6T
M93C46-MN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M29W320DB70N6F TR
M29W320DB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P16S-VMN6TP TR
M25P16S-VMN6TP TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W128GL7AZS6E
M29W128GL7AZS6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA

Related Product By Brand

MT41K256M16TW-107 AAT:P TR
MT41K256M16TW-107 AAT:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT29F4G08ABADAH4-IT:D
MT29F4G08ABADAH4-IT:D
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 63VFBGA
MT25QU256ABA8ESF-0SIT
MT25QU256ABA8ESF-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
NAND512W3A2CN6E
NAND512W3A2CN6E
Micron Technology Inc.
IC FLASH 512MBIT PARALLEL 48TSOP
M28W160FSB70ZA6E
M28W160FSB70ZA6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 64TBGA
M29W128GL60ZA6E
M29W128GL60ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M25P40-VMW6GB
M25P40-VMW6GB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO W
M25PE16-VMW6G
M25PE16-VMW6G
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
MT41K256M16TW-107 V:P TR
MT41K256M16TW-107 V:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT29F512G08CMCEBJ4-37ITRES:E
MT29F512G08CMCEBJ4-37ITRES:E
Micron Technology Inc.
IC MLC 256G 32GX8 VBGA 132VBGA
MTFC4GACAJCN-4M IT TR
MTFC4GACAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153VFBGA
MT40A512M16LY-062E AT:E
MT40A512M16LY-062E AT:E
Micron Technology Inc.
IC FLASH 8GBIT 1.6GHZ 96FBGA