MBRB10100CT-TP
  • Share:

Micro Commercial Co MBRB10100CT-TP

Manufacturer No:
MBRB10100CT-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 100V D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB10100CT-TP is a Schottky rectifier diode array produced by Micro Commercial Co. This device is designed for high-performance applications requiring low forward voltage drop and high frequency operation. It features a center tap configuration and is encapsulated in a D²PAK package, which is Pb-free and compliant with high-temperature requirements. The MBRB10100CT-TP is suitable for various power management and conversion applications due to its robust electrical and thermal characteristics.

Key Specifications

Characteristics Symbol Condition Max./Typical Units
Peak Inverse Voltage VRWM - 100 V
Average Forward Current IF(AV) 50% duty cycle @ TC = 105 °C, rectangular wave form 10 A
Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 120 A
Forward Voltage Drop (per leg) VF1 @ 5A, Pulse, TJ = 25 °C 0.85 V
Forward Voltage Drop (per leg) VF2 @ 5A, Pulse, TJ = 125 °C 0.75 V
Reverse Current at DC condition (per leg) IR1 @ VR = rated VR, TJ = 25 °C 1.0 mA
Reverse Current (per leg) IR2 @ VR = rated VR, TJ = 125 °C 15 mA
Junction Capacitance (per leg) CT @ VR = 5V, TC = 25 °C, fSIG = 1MHz 300 pF
Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 8.0 nH
Voltage Rate of Change dv/dt - 10,000 V/μs
Junction Temperature TJ - -55 to +150 °C
Storage Temperature Tstg - -55 to +150 °C
Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 6.0 °C/W
Approximate Weight wt - 1.85 g
Case Style - - D²PAK -

Key Features

  • Center tap configuration for versatile application use.
  • Low forward voltage drop, enhancing efficiency in power conversion.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • High frequency operation capability.
  • Guard ring for enhanced ruggedness and long-term reliability.
  • Pb-free device, compliant with environmental regulations.
  • All SMC parts are traceable to the wafer lot, ensuring quality and reliability.
  • 150 °C junction temperature operation, suitable for high-temperature applications.

Applications

  • Switching power supplies.
  • Converters.
  • Free-wheeling diodes.
  • Reverse battery protection.

Q & A

  1. What is the peak inverse voltage rating of the MBRB10100CT-TP?

    The peak inverse voltage rating is 100V.

  2. What is the average forward current rating of the MBRB10100CT-TP?

    The average forward current rating is 10A at 50% duty cycle and TC = 105 °C.

  3. What is the forward voltage drop of the MBRB10100CT-TP at 5A and TJ = 25 °C?

    The forward voltage drop is 0.85V.

  4. What is the junction temperature range of the MBRB10100CT-TP?

    The junction temperature range is -55 to +150 °C.

  5. Is the MBRB10100CT-TP Pb-free?

    Yes, the MBRB10100CT-TP is a Pb-free device.

  6. What is the typical series inductance of the MBRB10100CT-TP?

    The typical series inductance is 8.0 nH.

  7. What are the common applications of the MBRB10100CT-TP?

    Common applications include switching power supplies, converters, free-wheeling diodes, and reverse battery protection.

  8. What is the maximum thermal resistance junction to case of the MBRB10100CT-TP?

    The maximum thermal resistance junction to case is 6.0 °C/W.

  9. Does the MBRB10100CT-TP have a guard ring for enhanced ruggedness?

    Yes, the MBRB10100CT-TP features a guard ring for enhanced ruggedness and long-term reliability.

  10. Can the MBRB10100CT-TP operate at high frequencies?

    Yes, the MBRB10100CT-TP is capable of high frequency operation.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-50°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
0 Remaining View Similar

In Stock

$0.99
380

Please send RFQ , we will respond immediately.

Similar Products

Part Number MBRB10100CT-TP MBRB20100CT-TP
Manufacturer Micro Commercial Co Micro Commercial Co
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 20A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 5 A 850 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 150 µA @ 100 V
Operating Temperature - Junction -50°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK

Related Product By Categories

BAT54CW_R1_00001
BAT54CW_R1_00001
Panjit International Inc.
SOT-323, SKY
BAT54A-AQ
BAT54A-AQ
Diotec Semiconductor
SCHOTTKY SOT-23 30V 0.2A
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAS16VY,115
BAS16VY,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAT74S,135
BAT74S,135
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V 6TSSOP
STTH6002CPI
STTH6002CPI
STMicroelectronics
DIODE ARRAY GP 200V 30A 3TOPI
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
MURB1620CT
MURB1620CT
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
MBR2545CT-1
MBR2545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
BAT54BRW-7
BAT54BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAV99_S00Z
BAV99_S00Z
onsemi
DIODE HI COND 70V 200MA SOT-23
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK

Related Product By Brand

BAS40-04-TP
BAS40-04-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 40V SOT23
1N4148X-TP
1N4148X-TP
Micro Commercial Co
DIODE GEN PURP 75V 150MA SOD523
BAS20HE3-TP
BAS20HE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT23
BAS40WT-TP
BAS40WT-TP
Micro Commercial Co
DIODE SCHOTTKY 40V 200MA SOT323
BAT42W-TP
BAT42W-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOD123
SS16HE3-LTP
SS16HE3-LTP
Micro Commercial Co
SCHOTTKY BARRIER RECTIFIERS 60V
MUR115GP-AP
MUR115GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BZX84B12-TP
BZX84B12-TP
Micro Commercial Co
DIODE ZENER 12V 350MW SOT23
1N5350B-TP
1N5350B-TP
Micro Commercial Co
DIODE ZENER 13V 5W DO15
BC846BHE3-TP
BC846BHE3-TP
Micro Commercial Co
TRANS NPN 65V 0.1A SOT23
TIP41C-BP
TIP41C-BP
Micro Commercial Co
TRANS NPN 100V 6A TO220AB
S8050-B-AP
S8050-B-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92