MBRB10100CT-TP
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Micro Commercial Co MBRB10100CT-TP

Manufacturer No:
MBRB10100CT-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 100V D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB10100CT-TP is a Schottky rectifier diode array produced by Micro Commercial Co. This device is designed for high-performance applications requiring low forward voltage drop and high frequency operation. It features a center tap configuration and is encapsulated in a D²PAK package, which is Pb-free and compliant with high-temperature requirements. The MBRB10100CT-TP is suitable for various power management and conversion applications due to its robust electrical and thermal characteristics.

Key Specifications

Characteristics Symbol Condition Max./Typical Units
Peak Inverse Voltage VRWM - 100 V
Average Forward Current IF(AV) 50% duty cycle @ TC = 105 °C, rectangular wave form 10 A
Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 120 A
Forward Voltage Drop (per leg) VF1 @ 5A, Pulse, TJ = 25 °C 0.85 V
Forward Voltage Drop (per leg) VF2 @ 5A, Pulse, TJ = 125 °C 0.75 V
Reverse Current at DC condition (per leg) IR1 @ VR = rated VR, TJ = 25 °C 1.0 mA
Reverse Current (per leg) IR2 @ VR = rated VR, TJ = 125 °C 15 mA
Junction Capacitance (per leg) CT @ VR = 5V, TC = 25 °C, fSIG = 1MHz 300 pF
Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 8.0 nH
Voltage Rate of Change dv/dt - 10,000 V/μs
Junction Temperature TJ - -55 to +150 °C
Storage Temperature Tstg - -55 to +150 °C
Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 6.0 °C/W
Approximate Weight wt - 1.85 g
Case Style - - D²PAK -

Key Features

  • Center tap configuration for versatile application use.
  • Low forward voltage drop, enhancing efficiency in power conversion.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • High frequency operation capability.
  • Guard ring for enhanced ruggedness and long-term reliability.
  • Pb-free device, compliant with environmental regulations.
  • All SMC parts are traceable to the wafer lot, ensuring quality and reliability.
  • 150 °C junction temperature operation, suitable for high-temperature applications.

Applications

  • Switching power supplies.
  • Converters.
  • Free-wheeling diodes.
  • Reverse battery protection.

Q & A

  1. What is the peak inverse voltage rating of the MBRB10100CT-TP?

    The peak inverse voltage rating is 100V.

  2. What is the average forward current rating of the MBRB10100CT-TP?

    The average forward current rating is 10A at 50% duty cycle and TC = 105 °C.

  3. What is the forward voltage drop of the MBRB10100CT-TP at 5A and TJ = 25 °C?

    The forward voltage drop is 0.85V.

  4. What is the junction temperature range of the MBRB10100CT-TP?

    The junction temperature range is -55 to +150 °C.

  5. Is the MBRB10100CT-TP Pb-free?

    Yes, the MBRB10100CT-TP is a Pb-free device.

  6. What is the typical series inductance of the MBRB10100CT-TP?

    The typical series inductance is 8.0 nH.

  7. What are the common applications of the MBRB10100CT-TP?

    Common applications include switching power supplies, converters, free-wheeling diodes, and reverse battery protection.

  8. What is the maximum thermal resistance junction to case of the MBRB10100CT-TP?

    The maximum thermal resistance junction to case is 6.0 °C/W.

  9. Does the MBRB10100CT-TP have a guard ring for enhanced ruggedness?

    Yes, the MBRB10100CT-TP features a guard ring for enhanced ruggedness and long-term reliability.

  10. Can the MBRB10100CT-TP operate at high frequencies?

    Yes, the MBRB10100CT-TP is capable of high frequency operation.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-50°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
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Similar Products

Part Number MBRB10100CT-TP MBRB20100CT-TP
Manufacturer Micro Commercial Co Micro Commercial Co
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 20A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 5 A 850 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 150 µA @ 100 V
Operating Temperature - Junction -50°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK

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