Overview
The BD139-6-BP is an NPN power transistor manufactured by Micro Commercial Co. It is part of the BD139 series, which includes complementary PNP transistors such as the BD136, BD138, and BD140. This transistor is housed in a TO-126 (SOT32) plastic package, making it suitable for various power amplification and driver applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-base voltage (IE = 0) | 80 | V |
| VCEO | Collector-emitter voltage (IB = 0) | 80 | V |
| VEBO | Emitter-base voltage (IC = 0) | 5 | V |
| IC | Collector current (DC) | 1.5 | A |
| ICM | Collector peak current | 3 | A |
| IB | Base current | 0.5 | A |
| PTOT | Total dissipation at Tc ≤ 25 °C | 12.5 | W |
| Tstg | Storage temperature | -65 to 150 | °C |
| Tj | Max. operating junction temperature | 150 | °C |
| Rthj-case | Thermal resistance junction-case | 10 | °C/W |
| Rthj-amb | Thermal resistance junction-ambient | 100 | °C/W |
Key Features
- High Current Capability: The BD139-6-BP can handle a maximum collector current of 1.5 A and a peak collector current of 3 A, making it suitable for high-current applications.
- Low Voltage Operation: It has a maximum collector-emitter voltage of 80 V, which is suitable for low-voltage power amplification.
- Thermal Performance: The transistor has a thermal resistance from junction to case of 10 °C/W and from junction to ambient of 100 °C/W, ensuring efficient heat dissipation.
- DC Current Gain: The transistor offers a DC current gain (hFE) ranging from 25 to 250, depending on the collector current, ensuring reliable amplification.
- Collector-Emitter Saturation Voltage: A low VCE(sat) of 0.5 V at IC = 0.5 A and IB = 0.05 A, which minimizes power loss in saturation mode.
Applications
- Audio Amplifiers: The BD139-6-BP is often used in audio amplifiers and drivers due to its high current handling and low voltage operation, making it ideal for hi-fi and other audio applications.
- Television Circuits: It is also used in driver stages of television circuits where high current and low voltage are required.
- Power Amplification: Suitable for various power amplification tasks where reliability and efficiency are crucial.
Q & A
- What is the maximum collector current of the BD139-6-BP transistor?
The maximum collector current is 1.5 A.
- What is the maximum collector-emitter voltage of the BD139-6-BP transistor?
The maximum collector-emitter voltage is 80 V.
- What is the thermal resistance from junction to case for the BD139-6-BP transistor?
The thermal resistance from junction to case is 10 °C/W.
- What is the typical DC current gain (hFE) of the BD139-6-BP transistor?
The typical DC current gain ranges from 25 to 250, depending on the collector current.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD139-6-BP transistor?
The collector-emitter saturation voltage is 0.5 V at IC = 0.5 A and IB = 0.05 A.
- What are the common applications of the BD139-6-BP transistor?
Common applications include audio amplifiers, television circuits, and other power amplification tasks.
- What is the storage temperature range for the BD139-6-BP transistor?
The storage temperature range is -65 to 150 °C.
- What is the maximum operating junction temperature for the BD139-6-BP transistor?
The maximum operating junction temperature is 150 °C.
- What is the package type of the BD139-6-BP transistor?
The transistor is housed in a TO-126 (SOT32) plastic package.
- What are the PNP complements of the BD139-6-BP transistor?
The PNP complements are BD136, BD138, and BD140.
