Overview
The 2N5416L transistor, produced by Microchip Technology, is a silicon PNP bipolar junction transistor (BJT) designed for various consumer and industrial applications. This transistor is part of the 2N5415 and 2N5416 series, which are known for their high reliability and are qualified up to military standards (MIL-PRF-19500/485) including JAN, JANTX, JANTXV, and JANS levels. The 2N5416L is available in a TO-5 package and is suitable for low-power applications requiring high-frequency switching.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 300 | V |
| Collector-Base Voltage | VCBO | 350 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Continuous Collector Current | IC | 1.0 | A |
| Continuous Base Current | IB | 0.5 | A |
| Power Dissipation | PD | 0.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +200 | °C |
| Thermal Resistance Junction-to-Ambient | RӨJA | 234 | °C/W |
| Thermal Resistance Junction-to-Case | RӨJC | 17.5 | °C/W |
| Forward-Current Transfer Ratio (hFE) | hFE | 30 - 120 | |
| Saturation Voltage (VCE(SAT)) | VCE(SAT) | 2.0 | V |
| Saturation Voltage (VBE(SAT)) | VBE(SAT) | 1.5 | V |
Key Features
- JEDEC registered 2N5415 through 2N5416 series
- Qualified to military standards: JAN, JANTX, JANTXV, and JANS per MIL-PRF-19500/485
- RoHS compliant
- Low package profile available in TO-39 and surface mount packages (U4 and UA)
- Hermetically sealed, kovar base, nickel cap with gold-plated kovar leads
- High frequency switching capability
Applications
The 2N5416L transistor is suitable for a variety of applications, including:
- General purpose low-power applications requiring high-frequency switching
- Military and other high-reliability applications
- Consumer and industrial line-operated applications
Q & A
- What is the collector-emitter voltage rating of the 2N5416L transistor? The collector-emitter voltage rating is 300V.
- What is the continuous collector current of the 2N5416L transistor? The continuous collector current is 1.0 A.
- What are the operating and storage junction temperature ranges for the 2N5416L transistor? The operating and storage junction temperature range is -65 to +200 °C.
- Is the 2N5416L transistor RoHS compliant? Yes, the 2N5416L transistor is RoHS compliant.
- What are the typical applications of the 2N5416L transistor? The 2N5416L transistor is used in general purpose low-power applications, military and high-reliability applications, and consumer and industrial line-operated applications.
- What is the forward-current transfer ratio (hFE) of the 2N5416L transistor? The forward-current transfer ratio (hFE) is between 30 and 120.
- What is the saturation voltage (VCE(SAT)) of the 2N5416L transistor? The saturation voltage (VCE(SAT)) is 2.0 V.
- What is the thermal resistance junction-to-ambient (RӨJA) of the 2N5416L transistor? The thermal resistance junction-to-ambient (RӨJA) is 234 °C/W.
- What package types are available for the 2N5416L transistor? The 2N5416L transistor is available in TO-5, TO-39, and surface mount packages (U4 and UA).
- What are the lead materials and plating for the 2N5416L transistor? The leads are made of gold-plated kovar.
