IR2110PBF
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Infineon Technologies IR2110PBF

Manufacturer No:
IR2110PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDGE 14DIP
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The IR2110PBF, produced by Infineon Technologies, is a high-voltage, high-speed power MOSFET and IGBT driver IC. It features independent high and low side referenced output channels, making it suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations. The IC is designed for bootstrap operation and is fully operational up to +500 V, with a version available for +600 V operation (IR2113). It is packaged in a 14 Lead PDIP or 16 Lead SOIC WB, ensuring versatility in various applications.

Key Specifications

Parameter Value Units
Maximum Voltage 500 V
Output Current (Source/Sink) 2.5 A (typical) A
Gate Drive Supply Range 10 to 20 V
Logic Supply Range 3.3 to 20 V
Logic Compatibility 3.3 V logic compatible
Propagation Delay (Turn-on/Turn-off) 120 ns / 94 ns (typical) ns
Package Type 14 Lead PDIP, 16 Lead SOIC WB
Ambient Temperature Range -40 to 125 °C

Key Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +500 V (or +600 V for IR2113)
  • dV/dt immune
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs
  • Logic and power ground ±5 V offset
  • Tolerant to negative transient voltage

Applications

The IR2110PBF is widely used in various high-voltage applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high-voltage gate drivers
  • Renewable energy systems, such as solar and wind power inverters

Q & A

  1. What is the maximum operating voltage of the IR2110PBF?

    The IR2110PBF is fully operational up to +500 V, with a version available for +600 V operation (IR2113).

  2. What are the typical output source and sink currents of the IR2110PBF?

    The typical output source and sink currents are 2.5 A each.

  3. What is the gate drive supply range for the IR2110PBF?

    The gate drive supply range is from 10 to 20 V.

  4. Is the IR2110PBF compatible with 3.3 V logic?

    Yes, the IR2110PBF is 3.3 V logic compatible.

  5. What are the propagation delays for the IR2110PBF?

    The typical turn-on propagation delay is 120 ns, and the typical turn-off propagation delay is 94 ns.

  6. What package types are available for the IR2110PBF?

    The IR2110PBF is available in 14 Lead PDIP and 16 Lead SOIC WB packages).

  7. What is the ambient temperature range for the IR2110PBF?

    The ambient temperature range is from -40 to 125 °C).

  8. Does the IR2110PBF have undervoltage lockout?

    Yes, the IR2110PBF has undervoltage lockout for both channels).

  9. Is the IR2110PBF tolerant to negative transient voltage?

    Yes, the IR2110PBF is tolerant to negative transient voltage).

  10. What are some common applications of the IR2110PBF?

    The IR2110PBF is used in power supplies, motor control systems, industrial power systems, automotive systems, and renewable energy systems).

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:3.3V ~ 20V
Logic Voltage - VIL, VIH:6V, 9.5V
Current - Peak Output (Source, Sink):2A, 2A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):500 V
Rise / Fall Time (Typ):25ns, 17ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:14-DIP (0.300", 7.62mm)
Supplier Device Package:14-DIP
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Similar Products

Part Number IR2110PBF IR2117PBF IR2111PBF IR2112PBF IR2130PBF IR2118PBF IR2113PBF IR2110SPBF IR2010PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs Not For New Designs Not For New Designs Active Active Active Active
Driven Configuration Half-Bridge High-Side Half-Bridge High-Side or Low-Side Half-Bridge High-Side Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Single Synchronous Independent 3-Phase Single Independent Independent Independent
Number of Drivers 2 1 2 2 6 1 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 3.3V ~ 20V 3.3V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 6V, 9.5V 8.3V, 12.6V 6V, 9.5V 0.8V, 2.2V 6V, 9.5V 6V, 9.5V 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A 250mA, 500mA 250mA, 500mA 250mA, 500mA 250mA, 500mA 250mA, 500mA 2A, 2A 2A, 2A 3A, 3A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting Inverting Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 500 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V 200 V
Rise / Fall Time (Typ) 25ns, 17ns 80ns, 40ns 80ns, 40ns 80ns, 40ns 80ns, 35ns 80ns, 40ns 25ns, 17ns 25ns, 17ns 10ns, 15ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole
Package / Case 14-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 14-DIP (0.300", 7.62mm) 28-DIP (0.600", 15.24mm) 8-DIP (0.300", 7.62mm) 14-DIP (0.300", 7.62mm) 16-SOIC (0.295", 7.50mm Width) 14-DIP (0.300", 7.62mm)
Supplier Device Package 14-DIP 8-PDIP 8-PDIP 14-DIP 28-PDIP 8-PDIP 14-DIP 16-SOIC 14-DIP

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