BC859C-AQ
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Diotec Semiconductor BC859C-AQ

Manufacturer No:
BC859C-AQ
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859C-AQ is a General Purpose Bipolar Junction Transistor (GP BJT) produced by Diotec Semiconductor AG. This transistor is optimized for high-speed and low-voltage operations, making it an excellent choice for a wide range of electronic projects. It is packaged in a compact SOT-23 surface-mount package, which is ideal for space-efficient designs. The BC859C-AQ is known for its reliability and versatility, making it suitable for both analog and digital signal switching applications.

Key Specifications

ParameterValue
ManufacturerDiotec Semiconductor AG
Product CategoryBipolar Transistors - BJT
Transistor PolarityPNP
ConfigurationSingle
Collector-Emitter Voltage VCEO Max30 V
Collector-Base Voltage VCBO30 V
Emitter-Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage650 mV
Maximum DC Collector Current100 mA
Power Dissipation Pd250 mW
Gain Bandwidth Product fT100 MHz
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
QualificationAEC-Q101
DC Current Gain hFE Max520
Package/CaseSOT-23
Mounting StyleSMD/SMT

Key Features

  • High-Speed Operation: The BC859C-AQ is optimized for high-speed operations, making it suitable for digital signal processing applications such as data converters and logic gates.
  • Low-Voltage Operation: This transistor is designed for low-voltage operations, enhancing its performance in various analog and digital circuits.
  • Compact Packaging: The SOT-23 package ensures efficient use of space, making it ideal for compact designs.
  • High Current Gain: With a DC current gain (hFE) of up to 520, this transistor provides reliable amplification and switching capabilities.
  • High Voltage Handling: The transistor can handle a maximum collector-emitter voltage of 30V, making it suitable for applications requiring high voltage tolerance.

Applications

  • Analog Signal Switching: The BC859C-AQ can be used to switch analog signals in applications such as audio amplifiers and filters.
  • Digital Signal Processing: Its high-speed performance makes it suitable for digital signal processing applications, including data converters and logic gates.
  • Automotive Industry: This transistor is qualified to AEC-Q101 standards, making it suitable for use in the automotive industry.

Q & A

  1. What is the transistor polarity of the BC859C-AQ? The BC859C-AQ is a PNP transistor.
  2. What is the maximum collector-emitter voltage of the BC859C-AQ? The maximum collector-emitter voltage is 30V.
  3. What is the maximum DC collector current of the BC859C-AQ? The maximum DC collector current is 100 mA.
  4. What is the power dissipation of the BC859C-AQ? The power dissipation is 250 mW.
  5. What is the gain bandwidth product (fT) of the BC859C-AQ? The gain bandwidth product is 100 MHz.
  6. What is the operating temperature range of the BC859C-AQ? The operating temperature range is from -55°C to +150°C.
  7. Is the BC859C-AQ RoHS compliant? Yes, the BC859C-AQ is RoHS compliant.
  8. What is the package type of the BC859C-AQ? The package type is SOT-23.
  9. What are some typical applications of the BC859C-AQ? Typical applications include analog signal switching, digital signal processing, and automotive industry applications.
  10. What is the DC current gain (hFE) of the BC859C-AQ? The DC current gain (hFE) is up to 520.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC859C-AQ BC858C-AQ BC859A-AQ BC859B-AQ
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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