MBR10100CD-E1
  • Share:

Diodes Incorporated MBR10100CD-E1

Manufacturer No:
MBR10100CD-E1
Manufacturer:
Diodes Incorporated
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100CD-E1 is a high-performance Schottky rectifier diode produced by Diodes Incorporated. This component is designed for high-voltage and high-current applications, particularly in switch-mode power supplies, power management, and other high-frequency circuits. The MBR10100CD-E1 is known for its low forward voltage drop, high surge current capability, and high operating junction temperature, making it suitable for demanding power conversion tasks.

Key Specifications

Specification Value Units
Repetitive Reverse Voltage (Vrrm Max) 100 V
Average Rectified Forward Current (If(AV)) 10 A
Forward Voltage (VF Max) 0.85 V
Peak One Cycle Non-Repetitive Surge Current (IFSM Max) 150 A
Operating Junction Temperature (TJ Max) 150 °C
Operating Temperature Range -65 to +150 °C
Diode Configuration Single
Diode Case Style TO-252-3, DPak (2 Leads + Tab), SC-63
No. of Pins 2 Pins
Termination Type Through Hole
Diode Type Schottky

Key Features

  • Low Forward Voltage Drop: The MBR10100CD-E1 features a low forward voltage drop of 0.85V at 25°C, which reduces power losses and enhances efficiency in high-frequency circuits.
  • High Surge Current Capability: This diode can handle a peak one cycle non-repetitive surge current of up to 150A, making it robust for transient conditions.
  • High Operating Junction Temperature: The device can operate up to a junction temperature of 150°C, ensuring reliability in high-temperature environments.
  • High Purity Epoxy Encapsulation: The high purity, high temperature epoxy encapsulation enhances mechanical strength and moisture resistance.
  • Guard Ring for Stress Protection: The inclusion of a guard ring enhances ruggedness and long-term reliability.
  • Lead-Free Finish: The MBR10100CD-E1 is a lead-free device, complying with environmental regulations.

Applications

  • Switching Power Supplies: Ideal for use in switch-mode power supplies due to its low switching losses and high frequency operation.
  • Power Management: Suitable for various power management applications requiring high efficiency and reliability.
  • Converters: Used in DC-DC converters and other power conversion circuits where low forward voltage drop and high surge current capability are essential).
  • Free-Wheeling Diodes: Often used as free-wheeling diodes in power circuits to manage back-EMF and protect other components).
  • Reverse Battery Protection: Can be used to protect against reverse battery conditions in automotive and other applications).

Q & A

  1. What is the repetitive reverse voltage rating of the MBR10100CD-E1?

    The repetitive reverse voltage rating is 100V.

  2. What is the average rectified forward current of the MBR10100CD-E1?

    The average rectified forward current is 10A.

  3. What is the maximum forward voltage drop of the MBR10100CD-E1 at 25°C?

    The maximum forward voltage drop is 0.85V at 25°C.

  4. What is the peak one cycle non-repetitive surge current capability of the MBR10100CD-E1?

    The peak one cycle non-repetitive surge current capability is 150A.

  5. What is the operating junction temperature range of the MBR10100CD-E1?

    The operating junction temperature range is -65°C to +150°C.

  6. What type of packaging does the MBR10100CD-E1 come in?

    The MBR10100CD-E1 comes in TO-252-3, DPak (2 Leads + Tab), SC-63 packaging).

  7. Is the MBR10100CD-E1 a lead-free device?

    Yes, the MBR10100CD-E1 is a lead-free device).

  8. What are some common applications of the MBR10100CD-E1?

    Common applications include switching power supplies, power management, converters, free-wheeling diodes, and reverse battery protection).

  9. What is the thermal resistance junction to case (RθJC) for the MBR10100CD-E1?

    The thermal resistance junction to case (RθJC) is 2.0°C/W).

  10. Does the MBR10100CD-E1 have any special features for stress protection?

    Yes, it includes a guard ring for enhanced ruggedness and long-term reliability).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-2
0 Remaining View Similar

In Stock

-
542

Please send RFQ , we will respond immediately.

Same Series
MBR10100CD-E1
MBR10100CD-E1
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CS2TR-E1
MBR10100CS2TR-E1
DIODE ARRAY SCHOTTKY 100V TO263

Related Product By Categories

BAS40-04T-7-F
BAS40-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAT54CLT3G
BAT54CLT3G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAV70W
BAV70W
Diotec Semiconductor
DIODE SOT-323 75V 0.17A 4NS
BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
STTH16L06CG-TR
STTH16L06CG-TR
STMicroelectronics
DIODE ARRAY GP 600V 10A D2PAK
STPS20L60CT
STPS20L60CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO220AB
BYQ28EF-200-E3/45
BYQ28EF-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A ITO220AB
MBR6045PTG
MBR6045PTG
onsemi
DIODE ARRAY SCHOTTKY 45V SOT93
STPS10170CB
STPS10170CB
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK

Related Product By Brand

1N4148WS-13-F
1N4148WS-13-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOD323
BZX84C30S-7-F
BZX84C30S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 30V SOT363
BZX84C12-7-F
BZX84C12-7-F
Diodes Incorporated
DIODE ZENER 12V 300MW SOT23-3
BZX84C33Q-13-F
BZX84C33Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C7V5T-7-F
BZX84C7V5T-7-F
Diodes Incorporated
DIODE ZENER 7.5V 150MW SOT523
BZX84C13-7-F-79
BZX84C13-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C22-7-G
BZX84C22-7-G
Diodes Incorporated
DIODE ZENER
BCP5516TA
BCP5516TA
Diodes Incorporated
TRANS NPN 60V 1A SOT223-3
BC857AT-7-F
BC857AT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
BCX5316-13R
BCX5316-13R
Diodes Incorporated
TRANS PNP 80V 1A SOT89-3
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP