MBR10100CD-E1
  • Share:

Diodes Incorporated MBR10100CD-E1

Manufacturer No:
MBR10100CD-E1
Manufacturer:
Diodes Incorporated
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100CD-E1 is a high-performance Schottky rectifier diode produced by Diodes Incorporated. This component is designed for high-voltage and high-current applications, particularly in switch-mode power supplies, power management, and other high-frequency circuits. The MBR10100CD-E1 is known for its low forward voltage drop, high surge current capability, and high operating junction temperature, making it suitable for demanding power conversion tasks.

Key Specifications

Specification Value Units
Repetitive Reverse Voltage (Vrrm Max) 100 V
Average Rectified Forward Current (If(AV)) 10 A
Forward Voltage (VF Max) 0.85 V
Peak One Cycle Non-Repetitive Surge Current (IFSM Max) 150 A
Operating Junction Temperature (TJ Max) 150 °C
Operating Temperature Range -65 to +150 °C
Diode Configuration Single
Diode Case Style TO-252-3, DPak (2 Leads + Tab), SC-63
No. of Pins 2 Pins
Termination Type Through Hole
Diode Type Schottky

Key Features

  • Low Forward Voltage Drop: The MBR10100CD-E1 features a low forward voltage drop of 0.85V at 25°C, which reduces power losses and enhances efficiency in high-frequency circuits.
  • High Surge Current Capability: This diode can handle a peak one cycle non-repetitive surge current of up to 150A, making it robust for transient conditions.
  • High Operating Junction Temperature: The device can operate up to a junction temperature of 150°C, ensuring reliability in high-temperature environments.
  • High Purity Epoxy Encapsulation: The high purity, high temperature epoxy encapsulation enhances mechanical strength and moisture resistance.
  • Guard Ring for Stress Protection: The inclusion of a guard ring enhances ruggedness and long-term reliability.
  • Lead-Free Finish: The MBR10100CD-E1 is a lead-free device, complying with environmental regulations.

Applications

  • Switching Power Supplies: Ideal for use in switch-mode power supplies due to its low switching losses and high frequency operation.
  • Power Management: Suitable for various power management applications requiring high efficiency and reliability.
  • Converters: Used in DC-DC converters and other power conversion circuits where low forward voltage drop and high surge current capability are essential).
  • Free-Wheeling Diodes: Often used as free-wheeling diodes in power circuits to manage back-EMF and protect other components).
  • Reverse Battery Protection: Can be used to protect against reverse battery conditions in automotive and other applications).

Q & A

  1. What is the repetitive reverse voltage rating of the MBR10100CD-E1?

    The repetitive reverse voltage rating is 100V.

  2. What is the average rectified forward current of the MBR10100CD-E1?

    The average rectified forward current is 10A.

  3. What is the maximum forward voltage drop of the MBR10100CD-E1 at 25°C?

    The maximum forward voltage drop is 0.85V at 25°C.

  4. What is the peak one cycle non-repetitive surge current capability of the MBR10100CD-E1?

    The peak one cycle non-repetitive surge current capability is 150A.

  5. What is the operating junction temperature range of the MBR10100CD-E1?

    The operating junction temperature range is -65°C to +150°C.

  6. What type of packaging does the MBR10100CD-E1 come in?

    The MBR10100CD-E1 comes in TO-252-3, DPak (2 Leads + Tab), SC-63 packaging).

  7. Is the MBR10100CD-E1 a lead-free device?

    Yes, the MBR10100CD-E1 is a lead-free device).

  8. What are some common applications of the MBR10100CD-E1?

    Common applications include switching power supplies, power management, converters, free-wheeling diodes, and reverse battery protection).

  9. What is the thermal resistance junction to case (RθJC) for the MBR10100CD-E1?

    The thermal resistance junction to case (RθJC) is 2.0°C/W).

  10. Does the MBR10100CD-E1 have any special features for stress protection?

    Yes, it includes a guard ring for enhanced ruggedness and long-term reliability).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-2
0 Remaining View Similar

In Stock

-
542

Please send RFQ , we will respond immediately.

Same Series
MBR10100CD-E1
MBR10100CD-E1
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CS2-E1
MBR10100CS2-E1
DIODE ARRAY SCHOTTKY 100V TO263

Related Product By Categories

MBR20100CT-G1
MBR20100CT-G1
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO220AB
BAS40AW-AU_R1_000A1
BAS40AW-AU_R1_000A1
Panjit International Inc.
SOT-323, SKY
BAV23CA
BAV23CA
Diotec Semiconductor
DIODE SOT-23 250V 0.22A 50NS
BAV23QAZ
BAV23QAZ
Nexperia USA Inc.
BAV23QA - DUAL COMMON CATHODE HI
STPS3045CP
STPS3045CP
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V SOT93
BAR43CFILM
BAR43CFILM
STMicroelectronics
DIODE ARRAY SCHOTTKY 30V SOT23-3
STTH60AC06CWL
STTH60AC06CWL
STMicroelectronics
DIODE UFAST 600V TO247
BAT54C-F2-0000HF
BAT54C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
BAS70-04W-AQ
BAS70-04W-AQ
Diotec Semiconductor
SchottkyD, 70V, 0.07A
BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAS7006WE6327HTSA1
BAS7006WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK

Related Product By Brand

BAT54CTA
BAT54CTA
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV170T-7
BAV170T-7
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT523
BAV21W-7-F
BAV21W-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84C4V7Q-7-F
BZX84C4V7Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BC846BW-7-F
BC846BW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
74LVC1G08FW4-7
74LVC1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6
74HC164D14
74HC164D14
Diodes Incorporated
IC SHIFT REGISTER SER 14DIP