BC856ASQ-7-F
  • Share:

Diodes Incorporated BC856ASQ-7-F

Manufacturer No:
BC856ASQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT36
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856ASQ-7-F, manufactured by Diodes Incorporated, is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component is part of the BC856A series and is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications. The transistor array features two PNP transistors, each capable of handling a maximum collector-emitter voltage of 65V and a collector current of up to 100mA. It is housed in a compact SOT-363 package, ideal for space-constrained designs.

Key Specifications

Attribute Value Unit
Product Status Active
Polarity PNP
Collector-Base Voltage (Max) 80V
Collector-Emitter Breakdown Voltage (Max) 65V
Collector Current (Max) 100mA
Power Dissipation (Max) 200mW
Collector-Emitter Saturation Voltage (Max) 650mV @ 5mA, 100mA
Emitter-Base Voltage (Max) 5V
DC Current Gain (hFE) (Min) 125 @ 2mA, 5V
Collector Current Cutoff (Max) 15nA
Configuration Dual
Frequency - Transition 100MHz
Operating Temperature Range -55°C to +150°C
Moisture Sensitivity Level 1
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • High Collector Current: Up to 100mA, making it suitable for various applications requiring moderate current handling.
  • High Collector-Emitter Breakdown Voltage: 65V, providing robustness against voltage spikes.
  • Low Collector-Emitter Saturation Voltage: 650mV at 5mA and 100mA, ensuring efficient operation.
  • High Transition Frequency: 100MHz, suitable for high-frequency applications.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications, ensuring high reliability.
  • Lead-Free and RoHS Compliant: Totally lead-free and fully RoHS compliant, aligning with environmental regulations.
  • Compact Packaging: SOT-363 package, ideal for space-constrained designs.
  • Low Leakage Current: Collector current cutoff of 15nA, minimizing standby power consumption.

Applications

  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive applications such as sensors, actuators, and control systems.
  • Switching and Amplifier Circuits: Ideal for switching and AF amplifier applications due to its high transition frequency and low saturation voltage.
  • General Purpose Electronics: Can be used in a wide range of general-purpose electronic projects requiring reliable and efficient transistor performance.
  • Industrial Control Systems: Suitable for industrial control systems that require robust and reliable transistor arrays.

Q & A

  1. What is the maximum collector-emitter voltage of the BC856ASQ-7-F?

    The maximum collector-emitter voltage is 65V.

  2. What is the maximum collector current of the BC856ASQ-7-F?

    The maximum collector current is 100mA.

  3. What is the power dissipation of the BC856ASQ-7-F?

    The maximum power dissipation is 200mW.

  4. What is the transition frequency of the BC856ASQ-7-F?

    The transition frequency is 100MHz.

  5. Is the BC856ASQ-7-F AEC-Q101 qualified?

    Yes, the BC856ASQ-7-F is qualified to AEC-Q101 standards for high reliability in automotive applications.

  6. What is the package style of the BC856ASQ-7-F?

    The package style is SOT-363 (SC-70-6, SC-88).

  7. What is the operating temperature range of the BC856ASQ-7-F?

    The operating temperature range is -55°C to +150°C.

  8. Is the BC856ASQ-7-F lead-free and RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  9. What is the collector-emitter saturation voltage of the BC856ASQ-7-F?

    The collector-emitter saturation voltage is 650mV at 5mA and 100mA.

  10. What is the DC current gain (hFE) of the BC856ASQ-7-F?

    The DC current gain (hFE) is a minimum of 125 at 2mA and 5V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.05
3,108

Please send RFQ , we will respond immediately.

Similar Products

Part Number BC856ASQ-7-F BC856AQ-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type 2 PNP (Dual) PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200mW 310mW
Frequency - Transition 100MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-363 SOT-23-3

Related Product By Categories

SBC846BPDW1T2G
SBC846BPDW1T2G
onsemi
TRANS NPN/PNP 65V 0.1A SOT363
BC847AS_R1_00001
BC847AS_R1_00001
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS
SBC857BDW1T1G
SBC857BDW1T1G
onsemi
TRANS 2PNP 45V 0.1A SC88/SC70-6
BC847BV,115
BC847BV,115
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A SOT666
BC846ASQ-7-F
BC846ASQ-7-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT36
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
PBSS4160DSZ
PBSS4160DSZ
Nexperia USA Inc.
TRANS 2NPN 60V 1A SC-74
STS01DTP06
STS01DTP06
STMicroelectronics
TRANS NPN/PNP 30V 3A 8SO
BC847CDXV6T5G
BC847CDXV6T5G
onsemi
TRANS 2NPN 45V 0.1A SOT563
MAT01AHZ
MAT01AHZ
Analog Devices Inc.
TRANS 2NPN 45V 0.025A TO78-6
PMP5201Y/DG/B3X
PMP5201Y/DG/B3X
Nexperia USA Inc.
TRANS 2NPN MATCHED
BC856BSH-QF
BC856BSH-QF
Nexperia USA Inc.
BC856BSH-QF

Related Product By Brand

BAT54A-7-F
BAT54A-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV99-13-F
BAV99-13-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23
BAT760Q-7
BAT760Q-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BAS20W-7-F
BAS20W-7-F
Diodes Incorporated
DIODE GEN PURP 150V 200MA SOT323
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAS16LPQ-7
BAS16LPQ-7
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
BZX84B4V7Q-7-F
BZX84B4V7Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
2N7002-7-F
2N7002-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3