BC856ASQ-7-F
  • Share:

Diodes Incorporated BC856ASQ-7-F

Manufacturer No:
BC856ASQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT36
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856ASQ-7-F, manufactured by Diodes Incorporated, is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component is part of the BC856A series and is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications. The transistor array features two PNP transistors, each capable of handling a maximum collector-emitter voltage of 65V and a collector current of up to 100mA. It is housed in a compact SOT-363 package, ideal for space-constrained designs.

Key Specifications

Attribute Value Unit
Product Status Active
Polarity PNP
Collector-Base Voltage (Max) 80V
Collector-Emitter Breakdown Voltage (Max) 65V
Collector Current (Max) 100mA
Power Dissipation (Max) 200mW
Collector-Emitter Saturation Voltage (Max) 650mV @ 5mA, 100mA
Emitter-Base Voltage (Max) 5V
DC Current Gain (hFE) (Min) 125 @ 2mA, 5V
Collector Current Cutoff (Max) 15nA
Configuration Dual
Frequency - Transition 100MHz
Operating Temperature Range -55°C to +150°C
Moisture Sensitivity Level 1
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • High Collector Current: Up to 100mA, making it suitable for various applications requiring moderate current handling.
  • High Collector-Emitter Breakdown Voltage: 65V, providing robustness against voltage spikes.
  • Low Collector-Emitter Saturation Voltage: 650mV at 5mA and 100mA, ensuring efficient operation.
  • High Transition Frequency: 100MHz, suitable for high-frequency applications.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications, ensuring high reliability.
  • Lead-Free and RoHS Compliant: Totally lead-free and fully RoHS compliant, aligning with environmental regulations.
  • Compact Packaging: SOT-363 package, ideal for space-constrained designs.
  • Low Leakage Current: Collector current cutoff of 15nA, minimizing standby power consumption.

Applications

  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive applications such as sensors, actuators, and control systems.
  • Switching and Amplifier Circuits: Ideal for switching and AF amplifier applications due to its high transition frequency and low saturation voltage.
  • General Purpose Electronics: Can be used in a wide range of general-purpose electronic projects requiring reliable and efficient transistor performance.
  • Industrial Control Systems: Suitable for industrial control systems that require robust and reliable transistor arrays.

Q & A

  1. What is the maximum collector-emitter voltage of the BC856ASQ-7-F?

    The maximum collector-emitter voltage is 65V.

  2. What is the maximum collector current of the BC856ASQ-7-F?

    The maximum collector current is 100mA.

  3. What is the power dissipation of the BC856ASQ-7-F?

    The maximum power dissipation is 200mW.

  4. What is the transition frequency of the BC856ASQ-7-F?

    The transition frequency is 100MHz.

  5. Is the BC856ASQ-7-F AEC-Q101 qualified?

    Yes, the BC856ASQ-7-F is qualified to AEC-Q101 standards for high reliability in automotive applications.

  6. What is the package style of the BC856ASQ-7-F?

    The package style is SOT-363 (SC-70-6, SC-88).

  7. What is the operating temperature range of the BC856ASQ-7-F?

    The operating temperature range is -55°C to +150°C.

  8. Is the BC856ASQ-7-F lead-free and RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  9. What is the collector-emitter saturation voltage of the BC856ASQ-7-F?

    The collector-emitter saturation voltage is 650mV at 5mA and 100mA.

  10. What is the DC current gain (hFE) of the BC856ASQ-7-F?

    The DC current gain (hFE) is a minimum of 125 at 2mA and 5V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.05
3,108

Please send RFQ , we will respond immediately.

Similar Products

Part Number BC856ASQ-7-F BC856AQ-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type 2 PNP (Dual) PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200mW 310mW
Frequency - Transition 100MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-363 SOT-23-3

Related Product By Categories

MBT3946DW1T2G
MBT3946DW1T2G
onsemi
TRAN NPN/PNP 40V 0.2A SC88/SC70
PMBT3946YPN,125
PMBT3946YPN,125
Nexperia USA Inc.
TRANS NPN/PNP 40V 0.2A 6TSSOP
BCV62AE6327HTSA1
BCV62AE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
SMBT3946DW1T1G
SMBT3946DW1T1G
onsemi
TRAN NPN/PNP 40V 0.2A SC88/SC70
ULN2804A
ULN2804A
STMicroelectronics
TRANS 8NPN DARL 50V 0.5A 18DIP
NSV40302PDR2G
NSV40302PDR2G
onsemi
TRANS NPN/PNP 40V 3A 8SOIC
PBSS2515VS,315
PBSS2515VS,315
Nexperia USA Inc.
TRANS 2NPN 15V 0.5A SOT666
BC847CDXV6T5
BC847CDXV6T5
onsemi
TRANS 2NPN 45V 0.1A SOT563
BC847BV-7
BC847BV-7
Diodes Incorporated
TRANS 2NPN 45V 0.1A SOT563
BC847BDW1T3
BC847BDW1T3
onsemi
TRANS NPN DUAL 45V 100MA SOT-363
BC846S/DG/B4F
BC846S/DG/B4F
Nexperia USA Inc.
TRANSISTOR GEN PURP
BC846S/DG/B2F
BC846S/DG/B2F
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88

Related Product By Brand

BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BAT54TQ-7-F
BAT54TQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT523 T&R 3K
1N4001GL-T
1N4001GL-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BZT52HC39WF-7
BZT52HC39WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BZX84C9V1-7
BZX84C9V1-7
Diodes Incorporated
DIODE ZENER 9.1V 350MW SOT23-3
BZX84C2V4-7-F-79
BZX84C2V4-7-F-79
Diodes Incorporated
DIODE ZENER
BC857AW-7-F
BC857AW-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT323
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353