BC856ASQ-7-F
  • Share:

Diodes Incorporated BC856ASQ-7-F

Manufacturer No:
BC856ASQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT36
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856ASQ-7-F, manufactured by Diodes Incorporated, is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component is part of the BC856A series and is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications. The transistor array features two PNP transistors, each capable of handling a maximum collector-emitter voltage of 65V and a collector current of up to 100mA. It is housed in a compact SOT-363 package, ideal for space-constrained designs.

Key Specifications

Attribute Value Unit
Product Status Active
Polarity PNP
Collector-Base Voltage (Max) 80V
Collector-Emitter Breakdown Voltage (Max) 65V
Collector Current (Max) 100mA
Power Dissipation (Max) 200mW
Collector-Emitter Saturation Voltage (Max) 650mV @ 5mA, 100mA
Emitter-Base Voltage (Max) 5V
DC Current Gain (hFE) (Min) 125 @ 2mA, 5V
Collector Current Cutoff (Max) 15nA
Configuration Dual
Frequency - Transition 100MHz
Operating Temperature Range -55°C to +150°C
Moisture Sensitivity Level 1
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • High Collector Current: Up to 100mA, making it suitable for various applications requiring moderate current handling.
  • High Collector-Emitter Breakdown Voltage: 65V, providing robustness against voltage spikes.
  • Low Collector-Emitter Saturation Voltage: 650mV at 5mA and 100mA, ensuring efficient operation.
  • High Transition Frequency: 100MHz, suitable for high-frequency applications.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications, ensuring high reliability.
  • Lead-Free and RoHS Compliant: Totally lead-free and fully RoHS compliant, aligning with environmental regulations.
  • Compact Packaging: SOT-363 package, ideal for space-constrained designs.
  • Low Leakage Current: Collector current cutoff of 15nA, minimizing standby power consumption.

Applications

  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive applications such as sensors, actuators, and control systems.
  • Switching and Amplifier Circuits: Ideal for switching and AF amplifier applications due to its high transition frequency and low saturation voltage.
  • General Purpose Electronics: Can be used in a wide range of general-purpose electronic projects requiring reliable and efficient transistor performance.
  • Industrial Control Systems: Suitable for industrial control systems that require robust and reliable transistor arrays.

Q & A

  1. What is the maximum collector-emitter voltage of the BC856ASQ-7-F?

    The maximum collector-emitter voltage is 65V.

  2. What is the maximum collector current of the BC856ASQ-7-F?

    The maximum collector current is 100mA.

  3. What is the power dissipation of the BC856ASQ-7-F?

    The maximum power dissipation is 200mW.

  4. What is the transition frequency of the BC856ASQ-7-F?

    The transition frequency is 100MHz.

  5. Is the BC856ASQ-7-F AEC-Q101 qualified?

    Yes, the BC856ASQ-7-F is qualified to AEC-Q101 standards for high reliability in automotive applications.

  6. What is the package style of the BC856ASQ-7-F?

    The package style is SOT-363 (SC-70-6, SC-88).

  7. What is the operating temperature range of the BC856ASQ-7-F?

    The operating temperature range is -55°C to +150°C.

  8. Is the BC856ASQ-7-F lead-free and RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  9. What is the collector-emitter saturation voltage of the BC856ASQ-7-F?

    The collector-emitter saturation voltage is 650mV at 5mA and 100mA.

  10. What is the DC current gain (hFE) of the BC856ASQ-7-F?

    The DC current gain (hFE) is a minimum of 125 at 2mA and 5V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.05
3,108

Please send RFQ , we will respond immediately.

Similar Products

Part Number BC856ASQ-7-F BC856AQ-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type 2 PNP (Dual) PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200mW 310mW
Frequency - Transition 100MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-363 SOT-23-3

Related Product By Categories

BC847BS-TP
BC847BS-TP
Micro Commercial Co
TRANS 2NPN 45V 0.1A SOT363
BC847BPN-AU_R1_000A1
BC847BPN-AU_R1_000A1
Panjit International Inc.
SOT-363, TRANSISTOR
BC847CPN_R1_00001
BC847CPN_R1_00001
Panjit International Inc.
DUAL GENERAL PURPOSE TRANSISTORS
BC847SH6327XTSA1
BC847SH6327XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363-6
BC856BS,135
BC856BS,135
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
MAT01AH
MAT01AH
Analog Devices Inc.
TRANS 2NPN 45V 0.025A TO78-6
BC846S/ZLX
BC846S/ZLX
Nexperia USA Inc.
TRANS 2NPN 65V 0.1A 6TSSOP
BC846S/DG/B4X
BC846S/DG/B4X
Nexperia USA Inc.
TRANSISTOR GEN PURP
BC856BS/DG/B4X
BC856BS/DG/B4X
Nexperia USA Inc.
TRANSISTOR GEN PURP
PMP5201Y/DG/B3X
PMP5201Y/DG/B3X
Nexperia USA Inc.
TRANS 2NPN MATCHED
BC856SH-QX
BC856SH-QX
Nexperia USA Inc.
BC856SH-QX
BC847BSH-QF
BC847BSH-QF
Nexperia USA Inc.
BC847BSH-QF

Related Product By Brand

BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
1N4148WSQ-7-F
1N4148WSQ-7-F
Diodes Incorporated
DIODE GEN PURP 75V 250MA SOD323
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZX84B5V6Q-7-F
BZX84B5V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C20-7
BZX84C20-7
Diodes Incorporated
DIODE ZENER 20V 300MW SOT23-3
BC807-16W-7
BC807-16W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BC847CW-7-F
BC847CW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323
BCX5416TA
BCX5416TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26
74LVC2G34FW4-7
74LVC2G34FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN