BC847BFA-7B
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Diodes Incorporated BC847BFA-7B

Manufacturer No:
BC847BFA-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A X2-DFN0806-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BFA-7B is a high-performance NPN small signal transistor manufactured by Diodes Incorporated. This transistor is designed to offer high reliability and efficiency in various electronic applications. It features a compact DFN0806 package, which is significantly smaller than the traditional SOT23 package, making it ideal for space-constrained designs. The BC847BFA-7B is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive applications.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO6.0V
Continuous Collector CurrentIC100mA
Peak Pulse Collector CurrentICM200mA
Power DissipationPD435mW
Thermal Resistance, Junction to AmbientRθJA287°C/W
Package Footprint0.48mm^2
Package Height0.4mm

Key Features

  • High collector current of 100mA and peak pulse collector current of 200mA.
  • Compact DFN0806 package, 16 times smaller than SOT23, with a low profile of 0.4mm.
  • Complementary PNP type BC857BFA available.
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, meeting 'Green' device standards.
  • Qualified to AEC-Q101 standards for high reliability.
  • An automotive-compliant part available under separate datasheet (BC847BFAQ).

Applications

The BC847BFA-7B transistor is suitable for a wide range of applications, including:

  • Automotive systems, particularly where high reliability and compact design are crucial.
  • Consumer electronics requiring small footprint and high performance.
  • Industrial control systems where space efficiency and reliability are key.
  • Aerospace and defense applications due to its high reliability and compliance with stringent standards.

Q & A

  1. What is the collector-emitter voltage rating of the BC847BFA-7B transistor?
    The collector-emitter voltage (VCEO) rating is 45V.
  2. What is the continuous collector current of the BC847BFA-7B transistor?
    The continuous collector current (IC) is 100mA.
  3. What is the package type and footprint of the BC847BFA-7B transistor?
    The package type is DFN0806 with a footprint of 0.48mm^2.
  4. Is the BC847BFA-7B transistor RoHS compliant?
    Yes, the BC847BFA-7B is fully RoHS compliant and lead-free.
  5. What are the thermal characteristics of the BC847BFA-7B transistor?
    The thermal resistance, junction to ambient (RθJA), is 287°C/W, and the power dissipation (PD) is 435mW.
  6. Is there a complementary PNP type available for the BC847BFA-7B transistor?
    Yes, the complementary PNP type is BC857BFA.
  7. What standards is the BC847BFA-7B transistor qualified to?
    The BC847BFA-7B is qualified to AEC-Q101 standards for high reliability.
  8. Is the BC847BFA-7B transistor suitable for automotive applications?
    Yes, an automotive-compliant part is available under the separate datasheet BC847BFAQ.
  9. What is the height of the BC847BFA-7B transistor package?
    The package height is 0.4mm.
  10. Is the BC847BFA-7B transistor halogen and antimony free?
    Yes, the BC847BFA-7B is halogen and antimony free, meeting 'Green' device standards.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:435 mW
Frequency - Transition:170MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:X2-DFN0806-3
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Similar Products

Part Number BC847BFA-7B BC847BFZ-7B
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 435 mW 435 mW
Frequency - Transition 170MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XFDFN 3-XFDFN
Supplier Device Package X2-DFN0806-3 X2-DFN0606-3

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