HMC349AMS8GETR
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Analog Devices Inc. HMC349AMS8GETR

Manufacturer No:
HMC349AMS8GETR
Manufacturer:
Analog Devices Inc.
Package:
Tape & Reel (TR)
Description:
IC RF SWITCH SPDT 4GHZ 8MSG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The HMC349AMS8GETR from Analog Devices Inc. is a gallium arsenide (GaAs) pseudo-morphic high electron mobility transistor (PHEMT) single-pole, double throw (SPDT) switch. This component is designed to operate from 100 MHz to 4 GHz, making it highly suitable for various RF and microwave applications. It features high isolation, low insertion loss, and high input linearity, which are critical for maintaining signal integrity in wireless and cellular infrastructure systems.

Key Specifications

ParameterValue
Frequency Range100 MHz to 4 GHz
Supply Voltage (VDD)3 V to 5 V
Current Consumption (IDD)1.2 mA to 3.5 mA
Insertion Loss0.9 dB
Isolation57 dB
Input IP352 dBm (VDD = 5 V)
Input P1dB34 dBm
RF Input Power (Through Path)33.5 dBm (VDD = 5 V, TCASE = 85°C)
Package Type8-lead mini small outline package with exposed pad (MINI_SO_EP)
Digital Control Input VoltageLow: 0 V to 0.8 V, High: 2 VDD V

Key Features

  • High isolation of 57 dB and low insertion loss of 0.9 dB
  • High input IP3 of 52 dBm and high input P1dB of 34 dBm
  • Single positive supply voltage from 3 V to 5 V
  • CMOS-/TTL-compatible control interface
  • Internally matched to 50 Ω at RF ports, eliminating the need for external matching components
  • Bidirectional design allowing RF signal to be applied in either direction between ports
  • Driver incorporated for simplified control interface

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Mobile radios
  • Test equipment

Q & A

  1. What is the frequency range of the HMC349AMS8GETR?
    The HMC349AMS8GETR operates from 100 MHz to 4 GHz.
  2. What is the supply voltage range for this component?
    The supply voltage range is from 3 V to 5 V.
  3. What is the typical insertion loss of the HMC349AMS8GETR?
    The typical insertion loss is 0.9 dB.
  4. What is the isolation performance of this switch?
    The isolation performance is up to 57 dB.
  5. Is the HMC349AMS8GETR internally matched to 50 Ω?
    Yes, it is internally matched to 50 Ω at the RF ports.
  6. What type of package does the HMC349AMS8GETR come in?
    The component comes in an 8-lead mini small outline package with an exposed pad (MINI_SO_EP).
  7. Is the control interface CMOS-/TTL-compatible?
    Yes, the control interface is CMOS-/TTL-compatible.
  8. What are the typical applications for the HMC349AMS8GETR?
    Typical applications include cellular/4G infrastructure, wireless infrastructure, mobile radios, and test equipment.
  9. Does the HMC349AMS8GETR require external matching components?
    No, it does not require external matching components as it is internally matched to 50 Ω.
  10. Can the RF signal be applied in either direction between ports?
    Yes, the design is bidirectional, allowing the RF signal to be applied in either direction between ports.

Product Attributes

RF Type:General Purpose
Topology:- 
Circuit:SPDT
Frequency Range:0Hz ~ 4GHz
Isolation:50dB
Insertion Loss:1.2dB
Test Frequency:3GHz
P1dB:34dBm
IIP3:53dBm
Features:- 
Impedance:50Ohm
Voltage - Supply:5V
Operating Temperature:-40°C ~ 85°C
Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package:8-MSOP-EP
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In Stock

$6.92
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Same Series
EV1HMC349AMS8G
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HMC349AMS8GE
HMC349AMS8GE
IC RF SWITCH SPDT 4GHZ 8MSG

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