Overview
The HMC349AMS8GTR, produced by Analog Devices Inc., is a high-isolation, non-reflective, gallium arsenide (GaAs) pseudo-morphic high electron mobility transistor (PHEMT) single-pole, double-throw (SPDT) switch. This component is designed to operate from 100 MHz to 4 GHz, making it highly suitable for various RF and microwave applications, particularly in cellular infrastructure and wireless communication systems.
The device features high isolation of 57 dB, low insertion loss of 0.9 dB, and high input IP3 of 52 dBm, along with high input P1dB of 34 dBm. It operates with a single positive supply voltage ranging from 3 V to 5 V and includes a CMOS-/TTL-compatible control interface. The HMC349AMS8GTR is packaged in an 8-lead mini small outline package with an exposed pad (MINI_SO_EP), which enhances thermal and RF grounding.
Key Specifications
| Parameter | Rating/Value |
|---|---|
| Frequency Range | 100 MHz to 4 GHz |
| Isolation | 57 dB |
| Insertion Loss | 0.9 dB |
| Input IP3 | 52 dBm |
| Input P1dB | 34 dBm |
| Supply Voltage (VDD) | 3 V to 5 V |
| Supply Current (IDD) | 1.2 mA to 3.5 mA |
| Digital Control Input Voltage (VINL/VINH) | 0 to 0.8 V / 2 VDD V |
| RF Input Power (Through Path) | 31.5 dBm (VDD = 3 V, TCASE = 85°C) to 33.5 dBm (VDD = 5 V, TCASE = 85°C) |
| Package Type | 8-lead mini small outline package with exposed pad (MINI_SO_EP) |
Key Features
- High isolation of 57 dB and low insertion loss of 0.9 dB.
- High input IP3 of 52 dBm and high input P1dB of 34 dBm.
- Single positive supply voltage from 3 V to 5 V.
- CMOS-/TTL-compatible control interface.
- Internally matched to 50 Ω at the RF common port and the RF throw ports, eliminating the need for external matching components.
- Bidirectional design allowing RF input signal to be applied to the RFC port while the RF throw port is output, or vice versa.
- Incorporates a driver for simplified control interface with two digital control input pins (CTRL and EN).
- 8-lead mini small outline package with an exposed pad for enhanced thermal and RF grounding.
Applications
- Cellular infrastructure applications.
- Wireless infrastructure.
- Mobile radios.
- Test equipment.
Q & A
- What is the frequency range of the HMC349AMS8GTR?
The HMC349AMS8GTR operates from 100 MHz to 4 GHz.
- What is the isolation and insertion loss of the HMC349AMS8GTR?
The device features high isolation of 57 dB and low insertion loss of 0.9 dB.
- What is the supply voltage range for the HMC349AMS8GTR?
The supply voltage range is from 3 V to 5 V.
- Is the control interface of the HMC349AMS8GTR CMOS-/TTL-compatible?
- What type of package does the HMC349AMS8GTR come in?
The device is packaged in an 8-lead mini small outline package with an exposed pad (MINI_SO_EP).
- Does the HMC349AMS8GTR require external matching components?
No, the device is internally matched to 50 Ω at the RF common port and the RF throw ports.
- What are the typical applications of the HMC349AMS8GTR?
The device is typically used in cellular infrastructure, wireless infrastructure, mobile radios, and test equipment.
- How does the bidirectional design of the HMC349AMS8GTR work?
The RF input signal can be applied to the RFC port while the RF throw port is output, or vice versa.
- What is the role of the driver in the HMC349AMS8GTR?
The driver performs logic functions internally and provides a simplified control interface with two digital control input pins (CTRL and EN).
- What are the digital control input voltage levels for the HMC349AMS8GTR?
The digital control input voltage levels are 0 to 0.8 V for low and 2 VDD V for high.
