HMC349AMS8G
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Analog Devices Inc. HMC349AMS8G

Manufacturer No:
HMC349AMS8G
Manufacturer:
Analog Devices Inc.
Package:
Strip
Description:
IC POS CTRL SW SPDT 8MSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch designed by Analog Devices Inc. This component is specified to operate from 100 MHz to 4 GHz, making it highly suitable for various wireless and cellular infrastructure applications. It offers high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm. The switch operates with a single positive supply voltage from 3 V to 5 V and features a CMOS-/TTL-compatible control interface.

Key Specifications

Parameter Value Notes
Frequency Range 100 MHz to 4 GHz
Supply Voltage (VDD) 3 V to 5 V
Supply Current (IDD) 1.2 mA (typ) at VDD = 3 V to 5 V
Insertion Loss 0.9 dB (typ) at 2 GHz
Isolation 57 dB (typ) at 2 GHz
Input IP3 52 dBm (typ)
Input P1dB 34 dBm (typ)
Through Path Power Handling 33.5 dBm (typ) at VDD = 5 V, TCASE = 85°C
Terminated Path Power Handling 26.5 dBm (typ) at VDD = 3 V to 5 V, TCASE = 85°C
Operating Temperature Range -40°C to +125°C
Package Type 8-lead mini small outline package with exposed pad (MINI-SO-EP)

Key Features

  • Nonreflective, 50 Ω design
  • High isolation of 57 dB and low insertion loss of 0.9 dB
  • High input IP3 of 52 dBm and high input P1dB of 34 dBm
  • Single positive supply voltage from 3 V to 5 V
  • CMOS-/TTL-compatible control interface
  • All off state control
  • Rise and fall time of 60 ns (typ) at 10% to 90% of RF output
  • Internally matched to 50 Ω at RF ports; no external matching components required
  • Bidirectional design; RF input signal can be applied to RFC port while RF throw port is output, or vice versa
  • 8-lead mini small outline package with exposed pad (MINI-SO-EP)

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Mobile radios
  • Test equipment

Q & A

  1. What is the frequency range of the HMC349AMS8G?

    The HMC349AMS8G operates from 100 MHz to 4 GHz.

  2. What is the supply voltage range for the HMC349AMS8G?

    The supply voltage range is from 3 V to 5 V.

  3. What is the typical insertion loss of the HMC349AMS8G?

    The typical insertion loss is 0.9 dB at 2 GHz.

  4. What is the isolation of the HMC349AMS8G?

    The isolation is 57 dB (typ) at 2 GHz.

  5. What is the input IP3 of the HMC349AMS8G?

    The input IP3 is 52 dBm (typ).

  6. What is the input P1dB of the HMC349AMS8G?

    The input P1dB is 34 dBm (typ).

  7. What is the through path power handling of the HMC349AMS8G?

    The through path power handling is 33.5 dBm (typ) at VDD = 5 V, TCASE = 85°C.

  8. What is the package type of the HMC349AMS8G?

    The package type is an 8-lead mini small outline package with exposed pad (MINI-SO-EP).

  9. Is the HMC349AMS8G internally matched to 50 Ω?
  10. What are the typical applications of the HMC349AMS8G?

    The typical applications include cellular/4G infrastructure, wireless infrastructure, mobile radios, and test equipment.

Product Attributes

RF Type:General Purpose
Topology:- 
Circuit:SPDT
Frequency Range:- 
Isolation:- 
Insertion Loss:- 
Test Frequency:- 
P1dB:34dBm
IIP3:53dBm (min)
Features:- 
Impedance:50Ohm
Voltage - Supply:5V
Operating Temperature:-40°C ~ 85°C
Package / Case:- 
Supplier Device Package:- 
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