HMC435AMS8GETR
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Analog Devices Inc. HMC435AMS8GETR

Manufacturer No:
HMC435AMS8GETR
Manufacturer:
Analog Devices Inc.
Package:
Tape & Reel (TR)
Description:
IC RF SWITCH SPDT 4GHZ 8MSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The HMC435AMS8GETR from Analog Devices Inc. is a non-reflective DC to 4 GHz GaAs MESFET Single-Pole Double-Throw (SPDT) switch. This component is packaged in a low-cost 8-lead MSOP8G surface mount package with an exposed ground paddle. It is designed to offer high isolation, low insertion loss, and excellent power handling, making it suitable for various high-frequency applications.

Key Specifications

ParameterFrequency RangeMin.Typ.Max.Units
Insertion LossDC - 2.5 GHz0.81.01.2dB
Insertion LossDC - 3.6 GHz1.01.51.8dB
Insertion LossDC - 4.0 GHz1.21.82.0dB
Isolation (RFC to RF1/RF2)DC - 1.0 GHz566265dB
Isolation (RFC to RF1/RF2)DC - 2.0 GHz465255dB
Isolation (RFC to RF1/RF2)DC - 2.5 GHz434850dB
Isolation (RFC to RF1/RF2)DC - 3.6 GHz374245dB
Isolation (RFC to RF1/RF2)DC - 4.0 GHz304042dB
Return Loss (On State)DC - 2.5 GHz152325dB
Return Loss (On State)DC - 3.6 GHz131720dB
Return Loss (On State)DC - 4.0 GHz111416dB
Return Loss (Off State)0.5 - 4.0 GHz162123dB
Input Power for 1 dB Compression0.5 - 4.0 GHz273032dBm
Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone)0.5 - 1.0 GHz485456dBm
Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone)0.5 - 2.5 GHz455355dBm
Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone)0.5 - 4.0 GHz415153dBm
Switching SpeedDC - 4.0 GHz-tRISE, tFALL (10/90% RF): 40 ns, tON, tOFF (50% CTL to 10/90% RF): 60 ns-ns

Key Features

  • High Isolation: Up to 62 dB at 1 GHz and 52 dB at 2 GHz.
  • Low Insertion Loss: Typically 0.8 dB from DC to 2.5 GHz.
  • Non-Reflective Design: Ensures minimal signal reflection.
  • Single Positive Control: Controlled by 0/+5V input with low DC current.
  • High Input IP3: Up to 54 dBm.
  • Ultra Small MSOP-8 Package: With an exposed ground paddle for improved thermal and electrical performance.
  • Excellent Power Handling: P1dB compression of +30 dBm through the 3.8 GHz WiMAX band.

Applications

  • Basestations & Repeaters: Ideal for cellular infrastructure.
  • Cellular/3G and WiMAX/4G: Supports high-frequency communication standards.
  • Infrastructure and Access Points: Used in wireless communication systems.
  • CATV/CMTS: Suitable for cable television and cable modem termination systems.
  • Test Instrumentation: Used in various test and measurement equipment.

Q & A

  1. What is the frequency range of the HMC435AMS8GETR switch?
    The HMC435AMS8GETR operates from DC to 4 GHz.
  2. What is the typical insertion loss of the HMC435AMS8GETR?
    The typical insertion loss is 0.8 dB from DC to 2.5 GHz.
  3. What is the isolation level of the HMC435AMS8GETR at 1 GHz?
    The isolation level is up to 62 dB at 1 GHz.
  4. How is the HMC435AMS8GETR controlled?
    The switch is controlled by a single positive voltage input of 0/+5V.
  5. What is the input IP3 of the HMC435AMS8GETR?
    The input IP3 is up to 54 dBm.
  6. What package type is the HMC435AMS8GETR available in?
    The switch is available in an 8-lead MSOP8G surface mount package with an exposed ground paddle.
  7. What are some typical applications of the HMC435AMS8GETR?
    Typical applications include basestations, cellular/3G and WiMAX/4G, infrastructure and access points, CATV/CMTS, and test instrumentation.
  8. What is the switching speed of the HMC435AMS8GETR?
    The switching speed is characterized by tRISE, tFALL (10/90% RF): 40 ns, and tON, tOFF (50% CTL to 10/90% RF): 60 ns.
  9. What is the P1dB compression point of the HMC435AMS8GETR?
    The P1dB compression point is +30 dBm through the 3.8 GHz WiMAX band.
  10. Is the HMC435AMS8GETR suitable for high-power applications?
    Yes, it offers excellent power handling with a P1dB compression of +30 dBm.

Product Attributes

RF Type:General Purpose
Topology:- 
Circuit:SPDT
Frequency Range:0Hz ~ 4GHz
Isolation:48dB
Insertion Loss:0.8dB
Test Frequency:2.5GHz
P1dB:30dBm
IIP3:53dBm
Features:- 
Impedance:50Ohm
Voltage - Supply:5V
Operating Temperature:-40°C ~ 85°C
Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package:8-MSOP-EP
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Same Series
105143-HMC435AMS8G
105143-HMC435AMS8G
BOARD EVALUATION HMC435AMS8G
HMC435AMS8GE
HMC435AMS8GE
IC RF SWITCH SPDT 4GHZ 8MSOP
HMC435AMS8GTR
HMC435AMS8GTR
IC RF SWITCH SPDT 4GHZ 8MSOP

Similar Products

Part Number HMC435AMS8GETR HMC435AMS8GTR
Manufacturer Analog Devices Inc. Analog Devices Inc.
Product Status Active Obsolete
RF Type General Purpose General Purpose
Topology - -
Circuit SPDT SPDT
Frequency Range 0Hz ~ 4GHz 0Hz ~ 4GHz
Isolation 48dB 48dB
Insertion Loss 0.8dB 0.8dB
Test Frequency 2.5GHz 2.5GHz
P1dB 30dBm 30dBm
IIP3 53dBm 53dBm (min)
Features - -
Impedance 50Ohm 50Ohm
Voltage - Supply 5V 5V
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package 8-MSOP-EP 8-MSOP-EP

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