Infineon Technologies IRF5305STRLPBF HEXFET® P-Channel MOSFET
Description:
The IRF5305STRLPBF by Infineon Technologies is a lead-free and RoHS-compliant P-Channel MOSFET designed for a wide range of applications. With 6453 units in stock and available for immediate shipment from Hong Kong via DHL, FedEx, TNT, UPS, or EMS, this active part is part of the HEXFET® series and is packaged in a TO-263AB (D2PAK) form factor suitable for surface mount applications. This MOSFET offers a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 31A at 25°C, making it suitable for various power management applications.
Features:
1. P-Channel MOSFET from the HEXFET® series by Infineon Technologies
2. Lead-free and RoHS-compliant, ensuring environmental compatibility
3. TO-263AB (D2PAK) package for surface mount applications
4. Drain-to-source voltage (Vdss) of 55V and continuous drain current (Id) of 31A at 25°C
5. Low drive voltage with maximum on-resistance (Rds On) of 60mOhm at 16A and 10V
6. Maximum gate-source threshold voltage (Vgs(th)) of 4V at 250µA and gate charge (Qg) of 63nC at 10V
7. Wide operating temperature range of -55°C to 175°C
Applications:
The IRF5305STRLPBF P-Channel MOSFET is suitable for a variety of power management applications, including but not limited to:
1. Switch mode power supplies (SMPS)
2. Battery management systems
3. Motor control in automotive and industrial applications
5. Electronic load switches
6. Power over Ethernet (PoE) applications
7. Solar inverters and power optimizers
With its high drain-to-source voltage, continuous drain current, and low on-resistance, the IRF5305STRLPBF is an ideal solution for power management applications in various industries, offering reliability and performance in a compact surface-mount package.
