SS16HE3_B/I
  • Share:

Vishay General Semiconductor - Diodes Division SS16HE3_B/I

Manufacturer No:
SS16HE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 60V 1A DO214AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SS16HE3_B/I is a surface-mount Schottky barrier rectifier produced by Vishay General Semiconductor - Diodes Division. This component is part of the SS12 to SS16 series and is designed for high-efficiency and low-power loss applications. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM60V
Maximum RMS VoltageVRMS42V
Maximum DC Blocking VoltageVDC60V
Maximum Average Forward Rectified CurrentIF(AV)1.0A
Peak Forward Surge CurrentIFSM40A
Maximum Instantaneous Forward VoltageVF0.50 - 0.75V
Operating Junction Temperature RangeTJ-65 to +150°C
Storage Temperature RangeTSTG-65 to +150°C
PackageSMA (DO-214AC)

Key Features

  • Low profile package ideal for automated placement
  • Guardring for overvoltage protection
  • Low power losses and high efficiency
  • Low forward voltage drop
  • High surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified for automotive applications
  • Halogen-free and RoHS-compliant
  • Matt tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The SS16HE3_B/I is suitable for various applications including:

  • Low voltage, high frequency inverters
  • Freewheeling diodes
  • DC/DC converters
  • Polarity protection applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the SS16HE3_B/I? The maximum repetitive peak reverse voltage is 60 V.
  2. What is the maximum average forward rectified current of the SS16HE3_B/I? The maximum average forward rectified current is 1.0 A.
  3. What is the operating junction temperature range of the SS16HE3_B/I? The operating junction temperature range is -65 to +150 °C.
  4. Is the SS16HE3_B/I AEC-Q101 qualified? Yes, the SS16HE3_B/I is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What type of package does the SS16HE3_B/I use? The SS16HE3_B/I uses an SMA (DO-214AC) package.
  6. What are the key features of the SS16HE3_B/I? Key features include low profile package, guardring for overvoltage protection, low power losses, high efficiency, low forward voltage drop, and high surge capability.
  7. What are the typical applications of the SS16HE3_B/I? Typical applications include low voltage, high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection applications.
  8. Is the SS16HE3_B/I RoHS-compliant and halogen-free? Yes, the SS16HE3_B/I is both RoHS-compliant and halogen-free.
  9. What is the maximum instantaneous forward voltage of the SS16HE3_B/I? The maximum instantaneous forward voltage is between 0.50 V and 0.75 V.
  10. What is the peak forward surge current of the SS16HE3_B/I? The peak forward surge current is 40 A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:750 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:DO-214AC (SMA)
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.40
2,399

Please send RFQ , we will respond immediately.

Same Series
SS16HE3_B/I
SS16HE3_B/I
DIODE SCHOTTKY 60V 1A DO214AC
SS16-E3/61T
SS16-E3/61T
DIODE SCHOTTKY 60V 1A DO214AC
SS14-E3/61T
SS14-E3/61T
DIODE SCHOTTKY 40V 1A DO214AC
SS16-E3/5AT
SS16-E3/5AT
DIODE SCHOTTKY 60V 1A DO214AC
SS15-E3/61T
SS15-E3/61T
DIODE SCHOTTKY 50V 1A DO214AC
SS12-E3/61T
SS12-E3/61T
DIODE SCHOTTKY 20V 1A DO214AC
SS13-E3/61T
SS13-E3/61T
DIODE SCHOTTKY 30V 1A DO214AC
SS15-E3/5AT
SS15-E3/5AT
DIODE SCHOTTKY 50V 1A DO214AC
SS16-E3/51T
SS16-E3/51T
DIODE SCHOTTKY 60V 1A DO214AC
SS14HE3/5AT
SS14HE3/5AT
DIODE SCHOTTKY 40V 1A DO214AC
SS15HE3_A/H
SS15HE3_A/H
DIODE SCHOTTKY 50V 1A DO214AC
SS14HE3_A/H
SS14HE3_A/H
DIODE SCHOTTKY 40V 1A DO214AC

Similar Products

Part Number SS16HE3_B/I SS16HM3_B/I SS16HE3_A/I SS16HE3_B/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Discontinued at Digi-Key Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V 60 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 1 A 750 mV @ 1 A 750 mV @ 1 A 750 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 200 µA @ 60 V 200 µA @ 60 V 200 µA @ 60 V 200 µA @ 60 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA)
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T33CAHM3_A/H
SM15T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX384C4V3-E3-08
BZX384C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 200MW SOD323
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323