LL4150-M-18
  • Share:

Vishay General Semiconductor - Diodes Division LL4150-M-18

Manufacturer No:
LL4150-M-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 600MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LL4150-M-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the MiniMELF (SOD-80) package series and is designed for high-speed switching and general-purpose applications in various industries, including computer and industrial sectors.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive peak reverse voltage - VRRM 50 V
Peak forward surge current (tp = 1 μs) - IFSM 4 A
Forward continuous current - IF 600 mA
Average forward current VR = 0 IF(AV) 300 mA
Power dissipation - Ptot 500 mW
Forward voltage (IF = 1 mA) - VF 0.540 - 0.620 V
Forward voltage (IF = 10 mA) - VF 0.660 - 0.740 V
Forward voltage (IF = 50 mA) - VF 0.760 - 0.860 V
Operating temperature range - Top -55 to +175 °C
Storage temperature range - Tstg -65 to +175 °C
Thermal resistance junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 300 K/W
Junction temperature - Tj 175 °C
Package / Case - - DO-213AC, MINI-MELF, SOD-80 -
Mounting Type - - Surface Mount -

Key Features

  • Silicon epitaxial planar diodes
  • Low forward voltage drop
  • High forward current capability
  • Fast switching characteristics
  • MiniMELF (SOD-80) package for compact design
  • Surface mount technology for easy integration
  • ROHS compliant

Applications

  • High-speed switching applications
  • General-purpose use in computer and industrial applications
  • Rectification, polarity protection, or signal switching applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the LL4150-M-18 diode?

    The maximum repetitive peak reverse voltage is 50 V.

  2. What is the forward continuous current rating of the LL4150-M-18?

    The forward continuous current rating is 600 mA.

  3. What is the typical forward voltage drop at 1 mA current?

    The typical forward voltage drop at 1 mA current is between 0.540 V and 0.620 V.

  4. What is the operating temperature range of the LL4150-M-18?

    The operating temperature range is from -55°C to +175°C.

  5. Is the LL4150-M-18 ROHS compliant?
  6. What is the package type of the LL4150-M-18?

    The package type is MiniMELF (SOD-80).

  7. What is the thermal resistance junction to ambient air for the LL4150-M-18?

    The thermal resistance junction to ambient air is 300 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  8. What are the typical applications of the LL4150-M-18 diode?

    The typical applications include high-speed switching and general-purpose use in computer and industrial applications.

  9. What is the junction temperature rating of the LL4150-M-18?

    The junction temperature rating is 175°C.

  10. How is the LL4150-M-18 mounted?

    The LL4150-M-18 is a surface mount device.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):600mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:2.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.03
29,436

Please send RFQ , we will respond immediately.

Same Series
LL4150-M-18
LL4150-M-18
DIODE GEN PURP 50V 600MA SOD80

Similar Products

Part Number LL4150-M-18 LL4151-M-18 LL4154-M-18 LL4150-M-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 35 V 50 V
Current - Average Rectified (Io) 600mA 300mA 300mA 600mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA 1 V @ 50 mA 1 V @ 30 mA 1 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 50 nA @ 50 V 100 nA @ 25 V 100 nA @ 50 V
Capacitance @ Vr, F 2.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T24AHE3/9AT
SM15T24AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAV70-HE3-08
BAV70-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBRD340TRR
MBRD340TRR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DPAK
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX384B2V4-HE3-08
BZX384B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C13-G3-08
BZX84C13-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3