LL4150-M-18
  • Share:

Vishay General Semiconductor - Diodes Division LL4150-M-18

Manufacturer No:
LL4150-M-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 600MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LL4150-M-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the MiniMELF (SOD-80) package series and is designed for high-speed switching and general-purpose applications in various industries, including computer and industrial sectors.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive peak reverse voltage - VRRM 50 V
Peak forward surge current (tp = 1 μs) - IFSM 4 A
Forward continuous current - IF 600 mA
Average forward current VR = 0 IF(AV) 300 mA
Power dissipation - Ptot 500 mW
Forward voltage (IF = 1 mA) - VF 0.540 - 0.620 V
Forward voltage (IF = 10 mA) - VF 0.660 - 0.740 V
Forward voltage (IF = 50 mA) - VF 0.760 - 0.860 V
Operating temperature range - Top -55 to +175 °C
Storage temperature range - Tstg -65 to +175 °C
Thermal resistance junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 300 K/W
Junction temperature - Tj 175 °C
Package / Case - - DO-213AC, MINI-MELF, SOD-80 -
Mounting Type - - Surface Mount -

Key Features

  • Silicon epitaxial planar diodes
  • Low forward voltage drop
  • High forward current capability
  • Fast switching characteristics
  • MiniMELF (SOD-80) package for compact design
  • Surface mount technology for easy integration
  • ROHS compliant

Applications

  • High-speed switching applications
  • General-purpose use in computer and industrial applications
  • Rectification, polarity protection, or signal switching applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the LL4150-M-18 diode?

    The maximum repetitive peak reverse voltage is 50 V.

  2. What is the forward continuous current rating of the LL4150-M-18?

    The forward continuous current rating is 600 mA.

  3. What is the typical forward voltage drop at 1 mA current?

    The typical forward voltage drop at 1 mA current is between 0.540 V and 0.620 V.

  4. What is the operating temperature range of the LL4150-M-18?

    The operating temperature range is from -55°C to +175°C.

  5. Is the LL4150-M-18 ROHS compliant?
  6. What is the package type of the LL4150-M-18?

    The package type is MiniMELF (SOD-80).

  7. What is the thermal resistance junction to ambient air for the LL4150-M-18?

    The thermal resistance junction to ambient air is 300 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  8. What are the typical applications of the LL4150-M-18 diode?

    The typical applications include high-speed switching and general-purpose use in computer and industrial applications.

  9. What is the junction temperature rating of the LL4150-M-18?

    The junction temperature rating is 175°C.

  10. How is the LL4150-M-18 mounted?

    The LL4150-M-18 is a surface mount device.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):600mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:2.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.03
29,436

Please send RFQ , we will respond immediately.

Same Series
LL4150-M-18
LL4150-M-18
DIODE GEN PURP 50V 600MA SOD80

Similar Products

Part Number LL4150-M-18 LL4151-M-18 LL4154-M-18 LL4150-M-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 35 V 50 V
Current - Average Rectified (Io) 600mA 300mA 300mA 600mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA 1 V @ 50 mA 1 V @ 30 mA 1 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 50 nA @ 50 V 100 nA @ 25 V 100 nA @ 50 V
Capacitance @ Vr, F 2.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM6T220CAHM3_A/H
SM6T220CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T22CAHM3_A/H
SM6T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T33AHE3/52
SM6T33AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T15CAHM3/H
SM6T15CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384B2V4-HE3-08
BZX384B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX384C13-E3-18
BZX384C13-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3