BYQ28EB-100HE3_A/I
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Vishay General Semiconductor - Diodes Division BYQ28EB-100HE3_A/I

Manufacturer No:
BYQ28EB-100HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 100V 5A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28EB-100HE3_A/I is a dual common cathode ultrafast rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is part of the BYQ28E series, known for its high-performance characteristics in various power management applications. The diode array is packaged in a TO-220AB case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings. It is designed to handle high current and voltage requirements, making it suitable for a range of electronic systems.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM100V
Maximum DC Blocking VoltageVDC100V
Maximum Average Forward Rectified Current per Diode at TC = 100 °CIF(AV)5.0A
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM55A
Reverse Recovery Timetrr25ns
Forward Voltage DropVF0.895V
Maximum Junction TemperatureTJ150°C
Thermal Resistance, Junction to AmbientRθJA50°C/W
Thermal Resistance, Junction to CaseRθJC4.5°C/W

Key Features

  • Ultrafast recovery time of 25 ns, making it suitable for high-frequency applications.
  • High current handling capability with a maximum average forward rectified current of 5.0 A per diode.
  • Low forward voltage drop of 0.895 V, reducing power losses.
  • RoHS-compliant and meets UL 94 V-0 flammability ratings, ensuring environmental and safety standards.
  • AEC-Q101 qualified, indicating high reliability for automotive and industrial applications.

Applications

  • Power supplies: Used in rectification and voltage regulation circuits.
  • Freewheeling diodes: Essential in DC/DC converters and motor control circuits.
  • Polarity protection: Provides protection against reverse polarity conditions.
  • Automotive systems: Suitable for high-reliability applications due to AEC-Q101 qualification.
  • Industrial power systems: Used in various industrial power management and control circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYQ28EB-100HE3_A/I? The maximum repetitive peak reverse voltage is 100 V.
  2. What is the maximum average forward rectified current per diode at TC = 100 °C? The maximum average forward rectified current per diode is 5.0 A.
  3. What is the reverse recovery time of the BYQ28EB-100HE3_A/I? The reverse recovery time is 25 ns.
  4. Is the BYQ28EB-100HE3_A/I RoHS-compliant? Yes, it is RoHS-compliant.
  5. What is the thermal resistance, junction to ambient, of the BYQ28EB-100HE3_A/I? The thermal resistance, junction to ambient, is 50 °C/W.
  6. What are the typical applications of the BYQ28EB-100HE3_A/I? Typical applications include power supplies, freewheeling diodes, DC/DC converters, and polarity protection.
  7. What is the maximum junction temperature of the BYQ28EB-100HE3_A/I? The maximum junction temperature is 150 °C.
  8. Is the BYQ28EB-100HE3_A/I AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  9. What is the forward voltage drop of the BYQ28EB-100HE3_A/I? The forward voltage drop is 0.895 V.
  10. What is the package type of the BYQ28EB-100HE3_A/I? The package type is TO-220AB.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 100 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
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Similar Products

Part Number BYQ28EB-100HE3_A/I BYQ28EB-150HE3_A/I BYQ28EB-200HE3_A/I BYQ28EB-100HE3_A/P
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 150 V 200 V 100 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V 10 µA @ 150 V 10 µA @ 200 V 10 µA @ 100 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK)

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