BAW56-HE3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAW56-HE3-08

Manufacturer No:
BAW56-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 70V 250MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56-HE3-08 is a small signal diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed in a SOT23 package and features a dual-diode configuration with a common anode structure. It is suitable for various applications requiring low forward voltage and high switching speed.

Key Specifications

ParameterValue
V(RRM)70 V
IF(AV)0.2 A
I(FSM)2 A
V(F)1.1 V
trr6 ns
T(j)min-65 °C
T(j)max150 °C
TechnologyDUAL
MountingSMD
PackageSOT23
RoHS StatusRoHS-conform
PackagingREEL

Key Features

  • Dual-diode array in a common anode configuration
  • Low forward voltage (V(F)) of 1.1 V
  • High switching speed with a reverse recovery time (trr) of 6 ns
  • High temperature range from -65 °C to 150 °C
  • Automotive qualified (AEC-Q101)
  • Small SOT23 package for space-saving designs

Applications

The BAW56-HE3-08 is versatile and can be used in various applications such as:

  • Rectification and polarity protection
  • Signal switching and general-purpose switching applications
  • Automotive systems due to its AEC-Q101 qualification
  • Industrial and consumer electronics where high reliability and low forward voltage are required

Q & A

  1. What is the maximum reverse voltage (V(RRM)) of the BAW56-HE3-08?
    The maximum reverse voltage (V(RRM)) is 70 V.
  2. What is the average forward current (IF(AV)) of the BAW56-HE3-08?
    The average forward current (IF(AV)) is 0.2 A.
  3. What is the forward voltage drop (V(F)) of the BAW56-HE3-08?
    The forward voltage drop (V(F)) is 1.1 V.
  4. What is the reverse recovery time (trr) of the BAW56-HE3-08?
    The reverse recovery time (trr) is 6 ns.
  5. What is the operating temperature range of the BAW56-HE3-08?
    The operating temperature range is from -65 °C to 150 °C.
  6. Is the BAW56-HE3-08 RoHS compliant?
    Yes, the BAW56-HE3-08 is RoHS-conform.
  7. What is the package type of the BAW56-HE3-08?
    The package type is SOT23.
  8. Is the BAW56-HE3-08 automotive qualified?
    Yes, it is qualified to AEC-Q101 standards.
  9. What are the typical applications of the BAW56-HE3-08?
    Typical applications include rectification, polarity protection, signal switching, and general-purpose switching in automotive, industrial, and consumer electronics.
  10. What is the maximum forward impulse current (I(FSM)) of the BAW56-HE3-08?
    The maximum forward impulse current (I(FSM)) is 2 A.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:2.5 mA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.24
1,025

Please send RFQ , we will respond immediately.

Same Series
BAW56-E3-18
BAW56-E3-18
DIODE ARRAY GP 70V 250MA SOT23
BAW56-HE3-08
BAW56-HE3-08
DIODE ARRAY GP 70V 250MA SOT23
BAW56-E3-08
BAW56-E3-08
DIODE ARRAY GP 70V 250MA SOT23

Similar Products

Part Number BAW56-HE3-08 BAW56-HE3-18 BAW56-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode 1 Pair Common Anode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 250mA 250mA 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 2.5 mA @ 70 V 2.5 mA @ 70 V 2.5 µA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
BAS56,215
BAS56,215
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
STTH1002CGY-TR
STTH1002CGY-TR
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STTH16L06CT
STTH16L06CT
STMicroelectronics
DIODE ARRAY GP 600V 10A TO220AB
STTH3002CG
STTH3002CG
STMicroelectronics
DIODE ARRAY GP 200V 15A D2PAK
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAV70DXV6T5
BAV70DXV6T5
onsemi
DIODE ARRAY GP 100V 200MA SOT563
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAW56T,115
BAW56T,115
NXP USA Inc.
DIODE ARRAY GP 90V 150MA SC75
BAS40-04/ZLVL
BAS40-04/ZLVL
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99T116
BAV99T116
Rohm Semiconductor
DIODE ARRAY GP 75V 215MA SSD3

Related Product By Brand

SM6T30CAHM3_A/H
SM6T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T68CA-M3/57T
SM15T68CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX84B22-HE3-08
BZX84B22-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384C20-G3-18
BZX384C20-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84B3V0-G3-18
BZX84B3V0-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323