BAS516,L3F
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Toshiba Semiconductor and Storage BAS516,L3F

Manufacturer No:
BAS516,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 250MA ESC
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The BAS516,L3F is a high-speed switching diode produced by Toshiba Semiconductor and Storage. It is encapsulated in a small and flat lead SOD523 (ESC) Surface-Mounted Device (SMD) plastic package. This diode is designed for ultra-high-speed switching applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

CharacteristicsSymbolRatingUnit
Reverse VoltageVR100V
Average Forward CurrentIO0.25A
Peak Forward CurrentIF500mA
Non-repetitive Peak Forward Surge CurrentIFS1 A
Forward Voltage (at IF = 1 mA)VF0.715V
Forward Voltage (at IF = 10 mA)VF0.855V
Forward Voltage (at IF = 50 mA)VF1.00V
Forward Voltage (at IF = 150 mA)VF1.25V
Total Capacitance (Typ.)CT0.35pF
Reverse Current (Max at VR = 25 V)IR0.03μA
Reverse Current (Max at VR = 80 V)IR0.2μA
Reverse Recovery Timetrr3.0ns
Junction TemperatureTj-55 to 150°C
Storage TemperatureTstg-55 to 150°C

Key Features

  • High-speed switching capability, making it suitable for ultra-high-speed applications.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Encapsulated in a small and flat lead SOD523 (ESC) Surface-Mounted Device (SMD) plastic package.
  • Low forward voltage drop and low reverse current.
  • Fast reverse recovery time of 3.0 ns.
  • RoHS compatible.

Applications

  • Ultra-high-speed switching applications.
  • Automotive systems, including those requiring AEC-Q101 compliance.
  • General-purpose switching in electronic circuits.
  • High-frequency applications where fast switching times are critical.
  • Power supply and rectifier circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS516,L3F diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS516,L3F?
    The average forward current rating is 0.25 A.
  3. What package type is the BAS516,L3F diode available in?
    The diode is available in a SOD523 (ESC) Surface-Mounted Device (SMD) plastic package.
  4. Is the BAS516,L3F diode AEC-Q101 qualified?
    Yes, the BAS516,L3F is AEC-Q101 qualified.
  5. What is the typical total capacitance of the BAS516,L3F diode?
    The typical total capacitance is 0.35 pF.
  6. What is the maximum forward voltage drop at 1 mA forward current?
    The maximum forward voltage drop at 1 mA is 0.715 V.
  7. What is the reverse recovery time of the BAS516,L3F diode?
    The reverse recovery time is 3.0 ns.
  8. Is the BAS516,L3F diode RoHS compatible?
    Yes, the BAS516,L3F is RoHS compatible.
  9. What are the typical applications of the BAS516,L3F diode?
    The diode is typically used in ultra-high-speed switching applications, automotive systems, and general-purpose switching in electronic circuits.
  10. What are the storage and junction temperature ranges for the BAS516,L3F diode?
    The storage and junction temperature ranges are -55 to 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:200 nA @ 80 V
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:ESC
Operating Temperature - Junction:150°C (Max)
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Same Series
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DIODE GEN PURP 100V 250MA ESC

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