BAS516,L3F
  • Share:

Toshiba Semiconductor and Storage BAS516,L3F

Manufacturer No:
BAS516,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 250MA ESC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS516,L3F is a high-speed switching diode produced by Toshiba Semiconductor and Storage. It is encapsulated in a small and flat lead SOD523 (ESC) Surface-Mounted Device (SMD) plastic package. This diode is designed for ultra-high-speed switching applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

CharacteristicsSymbolRatingUnit
Reverse VoltageVR100V
Average Forward CurrentIO0.25A
Peak Forward CurrentIF500mA
Non-repetitive Peak Forward Surge CurrentIFS1 A
Forward Voltage (at IF = 1 mA)VF0.715V
Forward Voltage (at IF = 10 mA)VF0.855V
Forward Voltage (at IF = 50 mA)VF1.00V
Forward Voltage (at IF = 150 mA)VF1.25V
Total Capacitance (Typ.)CT0.35pF
Reverse Current (Max at VR = 25 V)IR0.03μA
Reverse Current (Max at VR = 80 V)IR0.2μA
Reverse Recovery Timetrr3.0ns
Junction TemperatureTj-55 to 150°C
Storage TemperatureTstg-55 to 150°C

Key Features

  • High-speed switching capability, making it suitable for ultra-high-speed applications.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Encapsulated in a small and flat lead SOD523 (ESC) Surface-Mounted Device (SMD) plastic package.
  • Low forward voltage drop and low reverse current.
  • Fast reverse recovery time of 3.0 ns.
  • RoHS compatible.

Applications

  • Ultra-high-speed switching applications.
  • Automotive systems, including those requiring AEC-Q101 compliance.
  • General-purpose switching in electronic circuits.
  • High-frequency applications where fast switching times are critical.
  • Power supply and rectifier circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS516,L3F diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS516,L3F?
    The average forward current rating is 0.25 A.
  3. What package type is the BAS516,L3F diode available in?
    The diode is available in a SOD523 (ESC) Surface-Mounted Device (SMD) plastic package.
  4. Is the BAS516,L3F diode AEC-Q101 qualified?
    Yes, the BAS516,L3F is AEC-Q101 qualified.
  5. What is the typical total capacitance of the BAS516,L3F diode?
    The typical total capacitance is 0.35 pF.
  6. What is the maximum forward voltage drop at 1 mA forward current?
    The maximum forward voltage drop at 1 mA is 0.715 V.
  7. What is the reverse recovery time of the BAS516,L3F diode?
    The reverse recovery time is 3.0 ns.
  8. Is the BAS516,L3F diode RoHS compatible?
    Yes, the BAS516,L3F is RoHS compatible.
  9. What are the typical applications of the BAS516,L3F diode?
    The diode is typically used in ultra-high-speed switching applications, automotive systems, and general-purpose switching in electronic circuits.
  10. What are the storage and junction temperature ranges for the BAS516,L3F diode?
    The storage and junction temperature ranges are -55 to 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:200 nA @ 80 V
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:ESC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.19
3,704

Please send RFQ , we will respond immediately.

Same Series
BAS516,H3F
BAS516,H3F
DIODE GEN PURP 100V 250MA ESC

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323

Related Product By Brand

74HCT245D
74HCT245D
Toshiba Semiconductor and Storage
IC TXRX NON-INVERT 5.5V 20SOIC
74HCT02D
74HCT02D
Toshiba Semiconductor and Storage
IC GATE NOR 4CH 2-INP 14SOIC
TBD62003AFWG,EL
TBD62003AFWG,EL
Toshiba Semiconductor and Storage
IC PWR SWITCH N-CHAN 1:1 16SOP
ULN2003APG,CN
ULN2003APG,CN
Toshiba Semiconductor and Storage
IC PWR RELAY 7NPN 1:1 16DIP
TLP250(D4-SANYD,F)
TLP250(D4-SANYD,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP250(FANUC,F)
TLP250(FANUC,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP250(D4-INV,F)
TLP250(D4-INV,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP701F(F)
TLP701F(F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP185(BLL-TL,SE
TLP185(BLL-TL,SE
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
TLP127(TEE-TPL,F)
TLP127(TEE-TPL,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER SMD
TLP627M(D4-TP1,E
TLP627M(D4-TP1,E
Toshiba Semiconductor and Storage
DC INPUT PHOTOCOUPLER; DIP4; ; V
TLP627M(D4-TP5,E
TLP627M(D4-TP5,E
Toshiba Semiconductor and Storage
DC INPUT PHOTOCOUPLER; DIP4; ; V