BAS516,H3F
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Toshiba Semiconductor and Storage BAS516,H3F

Manufacturer No:
BAS516,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 250MA ESC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS516,H3F is a high-speed switching diode produced by Toshiba Semiconductor and Storage. This component is designed for general-purpose, power, and switching applications. It features a single internal connection and is packaged in the SOD-523 (ESC) surface mount package. The diode is RoHS compatible, making it suitable for a wide range of modern electronic devices.

Key Specifications

FeatureSymbolRatingUnit
Average Forward CurrentIO0.25A
Reverse VoltageVR100V
Total Capacitance (Typ.)CT0.35pF
Reverse Current (Max) at VR=25VIR0.03μA
Reverse Current (Max) at VR=80VIR0.2μA
Forward Voltage (Max) at IF=1mAVF0.715V
Forward Voltage (Max) at IF=10mAVF0.855V
Forward Voltage (Max) at IF=50mAVF1.00V
Forward Voltage (Max) at IF=150mAVF1.25V
Package-SOD-523 (ESC)-
Pins-2-
Mounting-Surface Mount-
Dimensions (mm)-1.6×0.8×0.6-

Key Features

  • High-speed switching capability, making it suitable for applications requiring fast switching times.
  • Single internal connection and one circuit, simplifying design and integration.
  • RoHS compatible, ensuring environmental compliance.
  • Surface mount package (SOD-523) for compact and efficient board design.
  • Low forward voltage drop and low reverse current, enhancing overall efficiency.

Applications

The BAS516,H3F diode is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • Power supply circuits where high-speed switching is required.
  • Signal processing and transmission systems.
  • Automotive and industrial control systems.
  • Consumer electronics requiring compact and efficient diode solutions.

Q & A

  1. What is the maximum reverse voltage of the BAS516,H3F diode?
    The maximum reverse voltage is 100V.
  2. What is the average forward current rating of the BAS516,H3F diode?
    The average forward current rating is 0.25A.
  3. What package type is used for the BAS516,H3F diode?
    The diode is packaged in the SOD-523 (ESC) surface mount package.
  4. Is the BAS516,H3F diode RoHS compatible?
    Yes, the BAS516,H3F diode is RoHS compatible.
  5. What are the dimensions of the BAS516,H3F diode package?
    The dimensions are 1.6×0.8×0.6 mm.
  6. What is the total capacitance of the BAS516,H3F diode at 1 MHz?
    The total capacitance is typically 0.35 pF.
  7. What is the maximum forward voltage drop at 1 mA?
    The maximum forward voltage drop at 1 mA is 0.715 V.
  8. Can the BAS516,H3F diode be used in high-speed switching applications?
    Yes, the BAS516,H3F diode is designed for high-speed switching applications.
  9. What is the reverse current at 25V and 80V?
    The reverse current is 0.03 μA at 25V and 0.2 μA at 80V.
  10. Where can I find detailed package dimensions and land pattern for the BAS516,H3F diode?
    Detailed package dimensions and land pattern can be found on Toshiba's official website or through CAD data libraries like UltraLibrarian.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:200 nA @ 80 V
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:ESC
Operating Temperature - Junction:150°C (Max)
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Same Series
BAS516,H3F
BAS516,H3F
DIODE GEN PURP 100V 250MA ESC

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