BAS516,H3F
  • Share:

Toshiba Semiconductor and Storage BAS516,H3F

Manufacturer No:
BAS516,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 250MA ESC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS516,H3F is a high-speed switching diode produced by Toshiba Semiconductor and Storage. This component is designed for general-purpose, power, and switching applications. It features a single internal connection and is packaged in the SOD-523 (ESC) surface mount package. The diode is RoHS compatible, making it suitable for a wide range of modern electronic devices.

Key Specifications

FeatureSymbolRatingUnit
Average Forward CurrentIO0.25A
Reverse VoltageVR100V
Total Capacitance (Typ.)CT0.35pF
Reverse Current (Max) at VR=25VIR0.03μA
Reverse Current (Max) at VR=80VIR0.2μA
Forward Voltage (Max) at IF=1mAVF0.715V
Forward Voltage (Max) at IF=10mAVF0.855V
Forward Voltage (Max) at IF=50mAVF1.00V
Forward Voltage (Max) at IF=150mAVF1.25V
Package-SOD-523 (ESC)-
Pins-2-
Mounting-Surface Mount-
Dimensions (mm)-1.6×0.8×0.6-

Key Features

  • High-speed switching capability, making it suitable for applications requiring fast switching times.
  • Single internal connection and one circuit, simplifying design and integration.
  • RoHS compatible, ensuring environmental compliance.
  • Surface mount package (SOD-523) for compact and efficient board design.
  • Low forward voltage drop and low reverse current, enhancing overall efficiency.

Applications

The BAS516,H3F diode is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • Power supply circuits where high-speed switching is required.
  • Signal processing and transmission systems.
  • Automotive and industrial control systems.
  • Consumer electronics requiring compact and efficient diode solutions.

Q & A

  1. What is the maximum reverse voltage of the BAS516,H3F diode?
    The maximum reverse voltage is 100V.
  2. What is the average forward current rating of the BAS516,H3F diode?
    The average forward current rating is 0.25A.
  3. What package type is used for the BAS516,H3F diode?
    The diode is packaged in the SOD-523 (ESC) surface mount package.
  4. Is the BAS516,H3F diode RoHS compatible?
    Yes, the BAS516,H3F diode is RoHS compatible.
  5. What are the dimensions of the BAS516,H3F diode package?
    The dimensions are 1.6×0.8×0.6 mm.
  6. What is the total capacitance of the BAS516,H3F diode at 1 MHz?
    The total capacitance is typically 0.35 pF.
  7. What is the maximum forward voltage drop at 1 mA?
    The maximum forward voltage drop at 1 mA is 0.715 V.
  8. Can the BAS516,H3F diode be used in high-speed switching applications?
    Yes, the BAS516,H3F diode is designed for high-speed switching applications.
  9. What is the reverse current at 25V and 80V?
    The reverse current is 0.03 μA at 25V and 0.2 μA at 80V.
  10. Where can I find detailed package dimensions and land pattern for the BAS516,H3F diode?
    Detailed package dimensions and land pattern can be found on Toshiba's official website or through CAD data libraries like UltraLibrarian.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:200 nA @ 80 V
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:ESC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.03
9,262

Please send RFQ , we will respond immediately.

Same Series
BAS516,L3F
BAS516,L3F
DIODE GEN PURP 100V 250MA ESC

Related Product By Categories

PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

74HCT04D
74HCT04D
Toshiba Semiconductor and Storage
IC INVERTER 6CH 1-INP 14SOIC
74HC32D
74HC32D
Toshiba Semiconductor and Storage
IC GATE OR 4CH 2-INP 14SOIC
74HCT08D
74HCT08D
Toshiba Semiconductor and Storage
IC GATE AND 4CH 2-INP 14SOIC
74HC573D
74HC573D
Toshiba Semiconductor and Storage
IC LATCH OCTAL D 3ST 20SOIC
TLP701(TP,F)
TLP701(TP,F)
Toshiba Semiconductor and Storage
OPTOISO 5KV GATE DRIVER 6SDIP GW
TLP250(FA-TP1S,F)
TLP250(FA-TP1S,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP185(GRL-TL,SE
TLP185(GRL-TL,SE
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
TLP291(GRL-TP,SE
TLP291(GRL-TP,SE
Toshiba Semiconductor and Storage
OPTOISOLATOR 3.75KV TRANS 4-SO
TLP185(GR,E)
TLP185(GR,E)
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
TLP291(TP,E)
TLP291(TP,E)
Toshiba Semiconductor and Storage
OPTOISOLATOR 3.75KV TRANS 4-SO
TLP127(MAT-M-TPL,F
TLP127(MAT-M-TPL,F
Toshiba Semiconductor and Storage
PHOTOCOUPLER SMD
TLP127(V4-TPL,U,F)
TLP127(V4-TPL,U,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER SMD