Overview
The BAS316,H3F is a high-speed switching diode produced by Toshiba Semiconductor and Storage. This component is designed for high-performance switching applications, offering reliable and efficient operation. The diode is packaged in a SOD-323 (USC) package, which is RoHS compatible, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Average Forward Current | IO | 0.25 | A |
| Reverse Voltage | VR | 100 | V |
| Total Capacitance (Typ.) | CT | 0.35 | pF |
| Reverse Current (Max) at VR=25V | IR | 0.03 | μA |
| Reverse Current (Max) at VR=80V | IR | 0.2 | μA |
| Forward Voltage (Max) at IF=1mA | VF | 0.715 | V |
| Forward Voltage (Max) at IF=10mA | VF | 0.855 | V |
| Forward Voltage (Max) at IF=50mA | VF | 1.00 | V |
| Forward Voltage (Max) at IF=150mA | VF | 1.25 | V |
| Package Type | SOD-323 (USC) | ||
| Pins | 2 | ||
| Mounting Type | Surface Mount | ||
| Package Dimensions (mm) | 2.5 x 1.25 x 0.9 |
Key Features
- High-speed switching: The BAS316,H3F is optimized for high-speed switching applications, making it suitable for circuits requiring fast switching times.
- Single internal connection: This diode has a single internal connection, simplifying its integration into various circuit designs.
- RoHS compatibility: The component is RoHS compliant, ensuring it meets environmental regulations and is suitable for use in a wide range of applications.
- Low forward voltage drop: With a forward voltage drop as low as 0.715V at 1mA, this diode minimizes power loss in switching circuits.
- Low total capacitance: The diode has a total capacitance of 0.35pF, which is beneficial for high-frequency applications.
Applications
The BAS316,H3F high-speed switching diode is versatile and can be used in a variety of applications, including:
- Switching circuits: Ideal for high-speed switching in digital circuits, logic gates, and other electronic switches.
- Rectifier circuits: Can be used in rectifier circuits where high efficiency and low forward voltage drop are required.
- Automotive electronics: Suitable for use in automotive systems due to its robust performance and compliance with automotive standards.
- Consumer electronics: Used in various consumer electronic devices such as TVs, audio equipment, and other household appliances.
Q & A
- What is the maximum reverse voltage of the BAS316,H3F diode?
The maximum reverse voltage (VR) of the BAS316,H3F diode is 100V.
- What is the average forward current rating of the BAS316,H3F?
The average forward current (IO) rating is 0.25A.
- What is the package type of the BAS316,H3F diode?
The BAS316,H3F diode is packaged in a SOD-323 (USC) package.
- Is the BAS316,H3F diode RoHS compliant?
Yes, the BAS316,H3F diode is RoHS compliant.
- What are the dimensions of the BAS316,H3F package?
The package dimensions are 2.5 x 1.25 x 0.9 mm.
- What is the total capacitance of the BAS316,H3F diode?
The total capacitance (CT) is 0.35 pF at VR=0V and f=1MHz.
- What is the forward voltage drop at 150mA for the BAS316,H3F diode?
The forward voltage drop (VF) at IF=150mA is 1.25V.
- Can the BAS316,H3F be used in automotive applications?
Yes, the BAS316,H3F is suitable for use in automotive systems due to its robust performance and compliance with automotive standards.
- What is the reverse current at VR=80V for the BAS316,H3F diode?
The reverse current (IR) at VR=80V is 0.2 μA.
- Is the BAS316,H3F diode suitable for high-frequency applications?
Yes, the BAS316,H3F is suitable for high-frequency applications due to its low total capacitance and high-speed switching capabilities.
