UCC27211DDAR
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Texas Instruments UCC27211DDAR

Manufacturer No:
UCC27211DDAR
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOPWR
Delivery:
Payment:
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Product Introduction

Overview

The UCC27211DDAR is a high-performance, 4-A, 120-V half-bridge gate driver produced by Texas Instruments. This component is designed to drive two N-channel MOSFETs in high-side and low-side configurations with independent inputs. It is an enhancement of the popular UCC27201 MOSFET drivers, offering significant performance improvements such as increased peak output currents and enhanced robustness. The UCC27211DDAR is suitable for various high-frequency applications, including power supplies, half-bridge and full-bridge converters, and other power management systems.

Key Specifications

Parameter Value Unit
Maximum Boot Voltage 120 V DC
Output Currents 3.7A source, 4.5A sink A
Input Voltage Range –10V to 20V V
VDD Operating Range 8V to 17V (20V absolute maximum) V
Rise and Fall Time 7.2ns rise, 5.5ns fall (with 1000pF load) ns
Propagation Delay Time 20ns typical ns
Delay Matching 4ns ns
Operating Temperature Range –40°C to 150°C °C
Package Options HSOIC (DDA), SOIC (D), VSON (DRM), WSON (DPR)

Key Features

  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs.
  • TTL compatible input versions.
  • Input pins can tolerate –10V to 20V and are independent of supply voltage range.
  • Symmetrical undervoltage lockout for high-side and low-side drivers.
  • On-chip 120V rated bootstrap diode eliminates the need for external discrete diodes.
  • Fast propagation delay times and low rise and fall times.
  • Enhanced input hysteresis for improved noise immunity.
  • Available in various industry-standard packages.

Applications

  • Power supplies for telecom and datacom systems.
  • Half-bridge and full-bridge converters.
  • High-frequency power management systems.
  • Driving large power MOSFETs in various power conversion applications.

Q & A

  1. What is the maximum boot voltage of the UCC27211DDAR?

    The maximum boot voltage is 120V DC.

  2. What are the output current capabilities of the UCC27211DDAR?

    The UCC27211DDAR can source up to 3.7A and sink up to 4.5A.

  3. What is the operating temperature range of the UCC27211DDAR?

    The operating temperature range is from –40°C to 150°C.

  4. What types of input signals does the UCC27211DDAR support?

    The UCC27211DDAR supports TTL compatible input signals.

  5. Does the UCC27211DDAR have built-in undervoltage lockout (UVLO)?
  6. What is the rise and fall time of the UCC27211DDAR with a 1000pF load?

    The rise time is 7.2ns and the fall time is 5.5ns with a 1000pF load.

  7. What is the typical propagation delay time of the UCC27211DDAR?

    The typical propagation delay time is 20ns.

  8. Does the UCC27211DDAR have an on-chip bootstrap diode?
  9. What are the available package options for the UCC27211DDAR?

    The UCC27211DDAR is available in HSOIC (DDA), SOIC (D), VSON (DRM), and WSON (DPR) packages.

  10. How does the UCC27211DDAR handle negative voltages caused by parasitic inductance and stray capacitance?

    The switching node (HS pin) can handle –(24 – VDD) V maximum, protecting the high-side channel from inherent negative voltages.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:8V ~ 17V
Logic Voltage - VIL, VIH:1.3V, 2.8V
Current - Peak Output (Source, Sink):4A, 4A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):120 V
Rise / Fall Time (Typ):7.2ns, 5.5ns
Operating Temperature:-40°C ~ 140°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerSOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO PowerPad
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Similar Products

Part Number UCC27211DDAR UCC27201DDAR UCC27210DDAR UCC27211DDA
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent
Number of Drivers 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 8V ~ 17V 8V ~ 17V 8V ~ 17V 8V ~ 17V
Logic Voltage - VIL, VIH 1.3V, 2.8V 0.8V, 2.5V 2.4V, 5.9V 1.3V, 2.8V
Current - Peak Output (Source, Sink) 4A, 4A 3A, 3A 4A, 4A 4A, 4A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 120 V 120 V 120 V 120 V
Rise / Fall Time (Typ) 7.2ns, 5.5ns 8ns, 7ns 7.2ns, 5.5ns 7.2ns, 5.5ns
Operating Temperature -40°C ~ 140°C (TJ) -40°C ~ 140°C (TJ) -40°C ~ 140°C (TJ) -40°C ~ 140°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerSOIC (0.154", 3.90mm Width) 8-PowerSOIC (0.154", 3.90mm Width) 8-PowerSOIC (0.154", 3.90mm Width) 8-PowerSOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO PowerPad 8-SO PowerPad 8-SO PowerPad 8-SO PowerPad

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