Overview
The TXB0101DBVT from Texas Instruments is a 1-bit bidirectional voltage-level shifter designed for translating logic voltage levels between different voltage domains. This device operates with two separate configurable power-supply rails, allowing for universal low-voltage bidirectional translation between various voltage nodes such as 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V. The TXB0101 features auto-direction sensing, eliminating the need for a direction-control signal, and includes edge rate accelerators to enhance data rates. It is available in a SOT-23 (DBV) package with 6 pins and is part of Texas Instruments' NanoFree™ package technology, which uses the die as the package itself.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Package | SOT-23 (DBV) | - |
| Pins | 6 | - |
| Operating Temperature Range | -40 to 85 | °C |
| VCCA (A Port Supply Voltage) | 1.2 V to 3.6 V | V |
| VCCB (B Port Supply Voltage) | 1.65 V to 5.5 V | V |
| Maximum ICC (Power Consumption) | 5 µA | A |
| ESD Protection (Human Body Model) | ±2000 V (A Port), ±15 kV (B Port) | V |
| ESD Protection (Charged-Device Model) | ±1500 V | V |
| Output Impedance | 70 Ω (VCCO = 1.2 V to 1.8 V), 50 Ω (VCCO = 1.8 V to 3.3 V), 40 Ω (VCCO = 3.3 V to 5 V) | Ω |
| Thermal Resistance (Junction-to-Ambient) | 192.3 °C/W | °C/W |
Key Features
- Auto-direction sensing with no need for a direction-control signal.
- Operates with two separate configurable power-supply rails: VCCA (1.2 V to 3.6 V) and VCCB (1.65 V to 5.5 V).
- Edge rate accelerators (one-shots) to improve data rates.
- Low power consumption: maximum ICC of 5 µA.
- Supports partial-power-down mode operation with Ioff circuitry).
- High ESD protection: Human Body Model (HBM) and Charged-Device Model (CDM)).
- Output-enable (OE) input to place all outputs in high-impedance state when low).
- Available in Texas Instruments' NanoFree™ package technology).
Applications
The TXB0101DBVT is suitable for various applications requiring voltage translation between different voltage domains. These include:
- Low-voltage logic translation in mixed-voltage systems).
- Interface between different voltage level devices such as microcontrollers, memory, and peripherals).
- Power management and sequencing in multi-voltage systems).
- Industrial and consumer electronics where voltage level shifting is necessary).
Q & A
- What is the primary function of the TXB0101DBVT?
The primary function of the TXB0101DBVT is to perform bidirectional voltage-level shifting between different voltage domains.
- What are the operating voltage ranges for the A and B ports?
The A port operates from 1.2 V to 3.6 V, and the B port operates from 1.65 V to 5.5 V.
- What is the significance of the OE input in the TXB0101DBVT?
The OE (output-enable) input is used to disable the device by setting it low, which places all outputs in a high-impedance state.
- What kind of ESD protection does the TXB0101DBVT offer?
The device offers high ESD protection, exceeding ±2000 V for the A port and ±15 kV for the B port under the Human Body Model (HBM), and ±1500 V under the Charged-Device Model (CDM).
- Can the TXB0101DBVT be used in partial-power-down applications?
- What is the maximum power consumption of the TXB0101DBVT?
The maximum power consumption (ICC) is 5 µA.
- What is the thermal resistance of the TXB0101DBVT in the SOT-23 package?
The junction-to-ambient thermal resistance (RθJA) is 192.3 °C/W.
- Can external pullup or pulldown resistors be used with the TXB0101DBVT?
Yes, but they must be kept higher than 50 kΩ to avoid contention with the output drivers.
- Is the TXB0101DBVT suitable for open-drain signal translation?
No, for open-drain signal translation, devices from the TI TXS010X series should be used instead.
- What is the significance of the NanoFree™ package technology used in the TXB0101DBVT?
The NanoFree™ package technology uses the die as the package itself, representing a major breakthrough in IC packaging concepts.
