TPS2811DR
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Texas Instruments TPS2811DR

Manufacturer No:
TPS2811DR
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The TPS2811DR, produced by Texas Instruments, is a dual high-speed MOSFET driver integrated circuit. This device is part of the TPS281x series and is designed to deliver peak currents of up to 2 A into highly capacitive loads, making it suitable for high-frequency circuit applications. The TPS2811DR features two inverting drivers and an internal regulator, enhancing its versatility and performance in various electronic systems.

Key Specifications

ParameterValueUnit
Package Type8-SOIC (0.154, 3.90mm Width)
Number of Pins8
Output Peak Current2 A
Rise Time35 ns
Supply VoltageUp to 14 VV
Max Power Dissipation730 mWmW
Ambient Temperature Range−40°C to 125°C°C
Input Threshold Voltage (Positive-going)Approx. 2/3 of VCCV
Input Threshold Voltage (Negative-going)Approx. 1/3 of VCCV
Input Hysteresis1.2 V (at VCC = 5 V)V

Key Features

  • Dual high-speed MOSFET drivers with inverting outputs
  • Internal regulator for enhanced flexibility
  • Capable of delivering peak currents of up to 2 A and sinking up to 1.9 A
  • Fast switching times and short propagation delays
  • High input impedance and low shoot-through current
  • Schmidt trigger switching for high noise immunity
  • Operating temperature range of −40°C to 125°C

Applications

The TPS2811DR is suitable for a variety of high-frequency and high-capacitive load applications, including but not limited to:

  • Power management systems
  • Motor control circuits
  • High-frequency switching circuits
  • Audio and power amplifiers
  • Industrial control systems

Q & A

  1. What is the maximum output current of the TPS2811DR?
    The TPS2811DR can deliver a peak output current of up to 2 A.
  2. What is the package type of the TPS2811DR?
    The TPS2811DR is available in an 8-SOIC package.
  3. What is the operating temperature range of the TPS2811DR?
    The operating temperature range is −40°C to 125°C.
  4. Does the TPS2811DR have an internal regulator?
    Yes, the TPS2811DR features an internal regulator.
  5. What is the typical rise time of the TPS2811DR?
    The typical rise time is 35 ns.
  6. What is the input threshold voltage of the TPS2811DR?
    The input threshold voltage is approximately 2/3 of VCC for positive-going and 1/3 of VCC for negative-going.
  7. How does the Schmidt trigger switching enhance the TPS2811DR?
    The Schmidt trigger switching provides high noise immunity and limits shoot-through current to less than 6 mA.
  8. What are some common applications of the TPS2811DR?
    Common applications include power management systems, motor control circuits, high-frequency switching circuits, and industrial control systems.
  9. What is the maximum power dissipation of the TPS2811DR?
    The maximum power dissipation is 730 mW.
  10. Is the TPS2811DR suitable for high-capacitive loads?
    Yes, the TPS2811DR is designed to handle highly capacitive loads.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Synchronous
Number of Drivers:2
Gate Type:N-Channel, P-Channel MOSFET
Voltage - Supply:4V ~ 14V
Logic Voltage - VIL, VIH:1V, 4V
Current - Peak Output (Source, Sink):2A, 2A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):14ns, 15ns
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number TPS2811DR TPS2812DR TPS2814DR TPS2815DR TPS2813DR TPS2831DR TPS2811D
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Discontinued at Digi-Key Active
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side High-Side Low-Side
Channel Type Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous
Number of Drivers 2 2 2 2 2 2 2
Gate Type N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET N-Channel MOSFET N-Channel, P-Channel MOSFET
Voltage - Supply 4V ~ 14V 4V ~ 14V 4V ~ 14V 4V ~ 14V 4V ~ 14V 4.5V ~ 15V 4V ~ 14V
Logic Voltage - VIL, VIH 1V, 4V 1V, 4V 1V, 4V 1V, 4V 1V, 4V - 1V, 4V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A 2A, 2A 2A, 2A 2A, 2A 2.7A, 2.4A 2A, 2A
Input Type Inverting Non-Inverting Inverting, Non-Inverting Inverting Inverting, Non-Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - - 28 V -
Rise / Fall Time (Typ) 14ns, 15ns 14ns, 15ns 14ns, 15ns 14ns, 15ns 14ns, 15ns 50ns, 50ns 14ns, 15ns
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 14-SOIC 8-SOIC

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