BAS85 L0
  • Share:

Taiwan Semiconductor Corporation BAS85 L0

Manufacturer No:
BAS85 L0
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0, manufactured by Taiwan Semiconductor Corporation, is a Schottky diode designed for high-performance applications. This diode is characterized by its low forward voltage drop and fast switching times, making it suitable for a variety of electronic circuits. The BAS85-L0 is packaged in a mini MELF (Metal Electrode Leadless Face) package, which is surface mountable and offers a compact footprint. Although the product is currently listed as obsolete, it remains relevant for legacy systems and specific design requirements.

Key Specifications

ParameterValue
ManufacturerTaiwan Semiconductor Corporation
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)30 V
Current - Average Rectified (Io)200 mA
Voltage - Forward (Vf) (Max) @ If800 mV @ 100 mA
SpeedSmall Signal =< 200 mA (Io), Any Speed
Reverse Recovery Time (trr)5 ns
Current - Reverse Leakage @ Vr2 µA @ 25 V
Capacitance @ Vr, F10 pF @ 1 V, 1 MHz
Package / CaseDO-213AC, MINI-MELF, SOD-80
Mounting TypeSurface Mount
Operating Temperature - Junction125°C (Max)
Product StatusObsolete
RoHS StatusROHS Compliant

Key Features

  • Low forward voltage drop of 800 mV at 100 mA, reducing power losses in the circuit.
  • Fast switching times with a reverse recovery time of 5 ns, suitable for high-frequency applications.
  • Compact mini MELF package, ideal for surface mount technology and space-constrained designs.
  • Low reverse leakage current of 2 µA at 25 V, minimizing standby power consumption.
  • High junction operating temperature of up to 125°C, enhancing reliability in demanding environments.

Applications

The BAS85-L0 Schottky diode is versatile and can be used in various applications, including:

  • Power supply circuits: For rectification and voltage regulation due to its low forward voltage drop and fast recovery time.
  • Switching circuits: In high-frequency switching applications where fast recovery times are crucial.
  • Audio and video equipment: To minimize distortion and improve signal quality.
  • Automotive and industrial systems: Where high reliability and temperature stability are required.

Q & A

  1. What is the maximum reverse voltage rating of the BAS85-L0?
    The maximum reverse voltage rating is 30 V.
  2. What is the typical forward voltage drop at 100 mA?
    The typical forward voltage drop at 100 mA is 800 mV.
  3. What is the reverse recovery time of the BAS85-L0?
    The reverse recovery time is 5 ns.
  4. What is the maximum average rectified current rating?
    The maximum average rectified current rating is 200 mA.
  5. What type of package does the BAS85-L0 come in?
    The BAS85-L0 comes in a mini MELF (DO-213AC, SOD-80) package.
  6. Is the BAS85-L0 RoHS compliant?
    Yes, the BAS85-L0 is RoHS compliant.
  7. What is the maximum junction operating temperature?
    The maximum junction operating temperature is 125°C.
  8. Why is the BAS85-L0 listed as obsolete?
    The BAS85-L0 is listed as obsolete, meaning it is no longer in active production, but it may still be available from inventory or for legacy system support.
  9. What are some common applications for the BAS85-L0?
    Common applications include power supply circuits, switching circuits, audio and video equipment, and automotive and industrial systems.
  10. What is the current - reverse leakage at 25 V?
    The current - reverse leakage at 25 V is 2 µA.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
19

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
1.5KE68A A0G
1.5KE68A A0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR820 C0G
MUR820 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZX84C12 RFG
BZX84C12 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 12V 300MW SOT23
BZX84C3V6 RFG
BZX84C3V6 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 300MW SOT23
BZV55B9V1 L1G
BZV55B9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZX55C18 A0G
BZX55C18 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW DO35
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23