STTH8S06FP
  • Share:

STMicroelectronics STTH8S06FP

Manufacturer No:
STTH8S06FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH8S06FP is an ultrafast diode produced by STMicroelectronics, designed for high-performance applications requiring fast switching and low losses. This device is based on 600 V Pt doping planar technology, making it suitable for hard switching conditions and power factor corrections. It is part of the ST Turbo 2 family, known for its ultrafast recovery and low reverse recovery current, which significantly reduces switching power losses and enhances overall application efficiency.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 600 V
IF(AV) Average forward current 8 A
IFSM Surge non-repetitive forward current 60 A
Tstg Storage temperature range -65 to +175 °C
Tj Maximum operating junction temperature 175 °C
VF Forward voltage drop 1.5 (typ), 1.9 (max) at Tj = 25°C, IF = 8 A V
trr Reverse recovery time 12 (typ), 18 (max) ns at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/μs, VR = 30 V ns
IRM Reverse recovery current 1.6 (typ), 2.2 (max) A at Tj = 25°C, IF = 8 A, dIF/dt = -200 A/μs, VR = 200 V A
Rth(j-c) Junction to case thermal resistance 3.0 (TO-220AC), 5.5 (TO-220FPAC) °C/W

Key Features

  • Ultrafast Recovery: The STTH8S06FP features ultrafast recovery times, reducing switching losses and enhancing overall efficiency.
  • Low Reverse Recovery Current: This diode has an extremely low reverse recovery current, which minimizes the switching power losses of the MOSFET.
  • Low Thermal Resistance: With low thermal resistance, this device ensures efficient heat dissipation, especially in high-frequency operations.
  • Higher Frequency Operation: Suitable for higher frequency applications due to its fast switching capabilities.
  • Insulated Package: Available in insulated packages such as TO-220FPAC with an insulation voltage of 2000 VRMS.
  • Environmental Compliance: Offered in ECOPACK® packages, which meet various environmental standards.

Applications

  • Power Factor Corrections: Ideal for continuous mode power factor corrections and hard switching conditions.
  • Power Supplies and Power Conversion Systems: Suitable for use in power supplies and various power conversion systems.
  • High-Frequency Switching: Used in applications requiring high-frequency switching due to its ultrafast recovery and low thermal resistance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH8S06FP?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the STTH8S06FP?

    The average forward current rating is 8 A.

  3. What is the maximum operating junction temperature for the STTH8S06FP?

    The maximum operating junction temperature is 175 °C.

  4. What is the typical forward voltage drop at 25 °C and 8 A forward current?

    The typical forward voltage drop is 1.5 V.

  5. What is the typical reverse recovery time at 25 °C and specific test conditions?

    The typical reverse recovery time is 12 ns at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/μs, VR = 30 V.

  6. What are the available package types for the STTH8S06FP?

    The device is available in TO-220AC, TO-220FPAC, and DPAK packages.

  7. What is the insulation voltage for the TO-220FPAC package?

    The insulation voltage for the TO-220FPAC package is 2000 VRMS.

  8. What are the key applications of the STTH8S06FP?

    Key applications include power factor corrections, power supplies, and power conversion systems requiring high-frequency switching.

  9. How does the STTH8S06FP reduce switching losses?

    The device reduces switching losses through its ultrafast recovery and low reverse recovery current.

  10. Is the STTH8S06FP environmentally compliant?

    Yes, it is offered in ECOPACK® packages that meet various environmental standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:3.4 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:20 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220FPAC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.17
16

Please send RFQ , we will respond immediately.

Same Series
STTH8S06FP
STTH8S06FP
DIODE GEN PURP 600V 8A TO220FP
STTH8S06B-TR
STTH8S06B-TR
DIODE GEN PURP 600V 8A DPAK

Similar Products

Part Number STTH8S06FP STTH8L06FP STTH8R06FP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 3.4 V @ 8 A 1.3 V @ 8 A 2.9 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 105 ns 45 ns
Current - Reverse Leakage @ Vr 20 µA @ 600 V 8 µA @ 600 V 30 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack
Supplier Device Package TO-220FPAC TO-220FPAC TO-220FPAC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36