STTH8S06FP
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STMicroelectronics STTH8S06FP

Manufacturer No:
STTH8S06FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220FP
Delivery:
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iso45001
iso9001
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Product Introduction

Overview

The STTH8S06FP is an ultrafast diode produced by STMicroelectronics, designed for high-performance applications requiring fast switching and low losses. This device is based on 600 V Pt doping planar technology, making it suitable for hard switching conditions and power factor corrections. It is part of the ST Turbo 2 family, known for its ultrafast recovery and low reverse recovery current, which significantly reduces switching power losses and enhances overall application efficiency.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 600 V
IF(AV) Average forward current 8 A
IFSM Surge non-repetitive forward current 60 A
Tstg Storage temperature range -65 to +175 °C
Tj Maximum operating junction temperature 175 °C
VF Forward voltage drop 1.5 (typ), 1.9 (max) at Tj = 25°C, IF = 8 A V
trr Reverse recovery time 12 (typ), 18 (max) ns at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/μs, VR = 30 V ns
IRM Reverse recovery current 1.6 (typ), 2.2 (max) A at Tj = 25°C, IF = 8 A, dIF/dt = -200 A/μs, VR = 200 V A
Rth(j-c) Junction to case thermal resistance 3.0 (TO-220AC), 5.5 (TO-220FPAC) °C/W

Key Features

  • Ultrafast Recovery: The STTH8S06FP features ultrafast recovery times, reducing switching losses and enhancing overall efficiency.
  • Low Reverse Recovery Current: This diode has an extremely low reverse recovery current, which minimizes the switching power losses of the MOSFET.
  • Low Thermal Resistance: With low thermal resistance, this device ensures efficient heat dissipation, especially in high-frequency operations.
  • Higher Frequency Operation: Suitable for higher frequency applications due to its fast switching capabilities.
  • Insulated Package: Available in insulated packages such as TO-220FPAC with an insulation voltage of 2000 VRMS.
  • Environmental Compliance: Offered in ECOPACK® packages, which meet various environmental standards.

Applications

  • Power Factor Corrections: Ideal for continuous mode power factor corrections and hard switching conditions.
  • Power Supplies and Power Conversion Systems: Suitable for use in power supplies and various power conversion systems.
  • High-Frequency Switching: Used in applications requiring high-frequency switching due to its ultrafast recovery and low thermal resistance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH8S06FP?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the STTH8S06FP?

    The average forward current rating is 8 A.

  3. What is the maximum operating junction temperature for the STTH8S06FP?

    The maximum operating junction temperature is 175 °C.

  4. What is the typical forward voltage drop at 25 °C and 8 A forward current?

    The typical forward voltage drop is 1.5 V.

  5. What is the typical reverse recovery time at 25 °C and specific test conditions?

    The typical reverse recovery time is 12 ns at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/μs, VR = 30 V.

  6. What are the available package types for the STTH8S06FP?

    The device is available in TO-220AC, TO-220FPAC, and DPAK packages.

  7. What is the insulation voltage for the TO-220FPAC package?

    The insulation voltage for the TO-220FPAC package is 2000 VRMS.

  8. What are the key applications of the STTH8S06FP?

    Key applications include power factor corrections, power supplies, and power conversion systems requiring high-frequency switching.

  9. How does the STTH8S06FP reduce switching losses?

    The device reduces switching losses through its ultrafast recovery and low reverse recovery current.

  10. Is the STTH8S06FP environmentally compliant?

    Yes, it is offered in ECOPACK® packages that meet various environmental standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:3.4 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:20 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220FPAC
Operating Temperature - Junction:175°C (Max)
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Same Series
STTH8S06FP
STTH8S06FP
DIODE GEN PURP 600V 8A TO220FP
STTH8S06B-TR
STTH8S06B-TR
DIODE GEN PURP 600V 8A DPAK

Similar Products

Part Number STTH8S06FP STTH8L06FP STTH8R06FP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 3.4 V @ 8 A 1.3 V @ 8 A 2.9 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 105 ns 45 ns
Current - Reverse Leakage @ Vr 20 µA @ 600 V 8 µA @ 600 V 30 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack
Supplier Device Package TO-220FPAC TO-220FPAC TO-220FPAC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

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