STTH8R06D
  • Share:

STMicroelectronics STTH8R06D

Manufacturer No:
STTH8R06D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH8R06D, produced by STMicroelectronics, is an ultrafast high voltage rectifier diode that utilizes ST's Turbo 2 600 V technology. This diode is specifically designed for applications requiring high efficiency and low switching losses, such as boost diodes in continuous mode power factor corrections and hard switching conditions. It is also suitable for use as a free wheeling diode in power supplies and other power switching applications.

Key Specifications

ParameterValueUnit
VRRM (Repetitive peak reverse voltage)600V
IF(RMS) (RMS forward current)30A
IF(AV) (Average forward current)8A
IFSM (Surge non repetitive forward current)80A
Tstg (Storage temperature range)-65 to +175°C
Tj (Maximum operating junction temperature)175°C
VF (Forward voltage drop at IF = 8 A, Tj = 25 °C)1.4V
trr (Reverse recovery time at Tj = 25 °C)25 nsns
Rth(j-c) (Junction to case thermal resistance)2.2 (TO-220AC/D2PAK), 4.6 (TO-220FPAC)°C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Reduces switching losses
  • Low thermal resistance
  • High package insulation voltage: 2500 VRMS sine for TO-220AC and 2000 VRMS sine for TO-220FPAC
  • Epoxy meets UL94, V0 standards
  • Cooling method by conduction

Applications

The STTH8R06D is particularly suited for use in continuous mode power factor corrections and hard switching conditions. It is also intended for use as a free wheeling diode in power supplies and other power switching applications.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the STTH8R06D? The VRRM is 600 V.
  2. What is the average forward current (IF(AV)) rating for the STTH8R06D? The IF(AV) is 8 A.
  3. What is the maximum operating junction temperature (Tj) for the STTH8R06D? The Tj is 175 °C.
  4. What are the typical forward voltage drop (VF) and reverse recovery time (trr) for the STTH8R06D? The VF is typically 1.4 V at IF = 8 A and Tj = 25 °C, and the trr is typically 25 ns.
  5. What are the available package types for the STTH8R06D? The available packages are TO-220AC, TO-220FPAC, and D2PAK.
  6. What is the junction to case thermal resistance (Rth(j-c)) for the TO-220AC and TO-220FPAC packages? For TO-220AC and D2PAK, Rth(j-c) is 2.2 °C/W, and for TO-220FPAC, it is 4.6 °C/W.
  7. What are the storage temperature range and surge non-repetitive forward current ratings? The storage temperature range is -65 to +175 °C, and the surge non-repetitive forward current is 80 A for tp = 10 ms sinusoidal.
  8. Does the epoxy used in the packaging meet any specific standards? Yes, the epoxy meets UL94, V0 standards.
  9. What is the recommended torque value for the TO-220AC package? The recommended torque value is 0.55 N·m.
  10. What are some typical applications for the STTH8R06D? Typical applications include boost diodes in continuous mode power factor corrections, hard switching conditions, and as free wheeling diodes in power supplies.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:30 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.52
55

Please send RFQ , we will respond immediately.

Same Series
STTH8R06DIRG
STTH8R06DIRG
DIODE GEN PURP 600V 8A TO220AC
STTH8R06FP
STTH8R06FP
DIODE GEN PURP 600V 8A TO220FP
STTH8R06G-TR
STTH8R06G-TR
DIODE GEN PURP 600V 8A D2PAK

Similar Products

Part Number STTH8R06D STTH8S06D STTH8R06G STTH5R06D STTH806D STTH8L06D STTH8R03D STTH8R04D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 300 V 400 V
Current - Average Rectified (Io) 8A 8A 8A 5A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 8 A 3.4 V @ 8 A 2.9 V @ 8 A 2.9 V @ 5 A 1.85 V @ 8 A 1.3 V @ 8 A 1.8 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 45 ns 18 ns 45 ns 40 ns 55 ns 105 ns 30 ns 50 ns
Current - Reverse Leakage @ Vr 30 µA @ 600 V 20 µA @ 600 V 30 µA @ 600 V 20 µA @ 600 V 8 µA @ 600 V 8 µA @ 600 V 10 µA @ 300 V 10 µA @ 400 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC D2PAK TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) -40°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK