STTH60P03SW
  • Share:

STMicroelectronics STTH60P03SW

Manufacturer No:
STTH60P03SW
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 300V 60A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH60P03SW is an ultrafast recovery power rectifier manufactured by STMicroelectronics. It is specifically designed for energy recovery in Plasma Display Panel (PDP) applications. The device has been optimized to minimize power losses, enhance luminous efficiency, and ensure high sustain frequencies.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 300 V
Average Forward Current IF(AV) 60 A
Forward RMS Current IF(RMS) 80 A
Surge Non-Repetitive Forward Current (t = 10 ms, Sinusoidal) IFSM 250 A
Maximum Operating Junction Temperature Tj 175 °C
Storage Temperature Range Tstg -65 to +175 °C
Forward Voltage Drop (Typical at Tj = 25°C, IF = 30 A) VF 0.9 V
Reverse Recovery Current (Typical at Tj = 100°C, IF = 60 A, VR = 100 V) IRM 6-7.5 A
Package TO-247
RoHS Compliance Grade Ecopack2

Key Features

  • Ultrafast recovery allowing high sustain frequency
  • Decrease charge evacuation time in the inductance
  • Minimize switching-on and total power losses
  • Increase luminous efficiency and brightness
  • Soft and noise-free recovery
  • High surge capability
  • High junction temperature

Applications

The STTH60P03SW is primarily used in Plasma Display Panel (PDP) applications for energy recovery circuits. Its optimized parameters make it suitable for high-frequency operations and efficient power management in such systems.

Q & A

  1. What is the primary application of the STTH60P03SW?

    The STTH60P03SW is primarily used in Plasma Display Panel (PDP) applications for energy recovery circuits.

  2. What is the repetitive peak reverse voltage of the STTH60P03SW?

    The repetitive peak reverse voltage is 300 V.

  3. What is the average forward current rating of the STTH60P03SW?

    The average forward current rating is 60 A.

  4. What is the maximum operating junction temperature of the STTH60P03SW?

    The maximum operating junction temperature is 175°C.

  5. What package type is the STTH60P03SW available in?

    The STTH60P03SW is available in the TO-247 package.

  6. Is the STTH60P03SW RoHS compliant?
  7. What are the key features of the STTH60P03SW?

    The key features include ultrafast recovery, decreased charge evacuation time, minimized power losses, increased luminous efficiency, soft and noise-free recovery, high surge capability, and high junction temperature.

  8. How does the STTH60P03SW minimize power losses?

    The device minimizes power losses through its optimized parameters for the energy recovery circuit, allowing for ultrafast recovery and reduced switching-on losses.

  9. What is the forward voltage drop of the STTH60P03SW at typical conditions?

    The forward voltage drop is typically 0.9 V at Tj = 25°C and IF = 30 A.

  10. What is the reverse recovery current of the STTH60P03SW?

    The reverse recovery current is typically between 6-7.5 A at Tj = 100°C, IF = 60 A, and VR = 100 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):60A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$3.91
58

Please send RFQ , we will respond immediately.

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN