Overview
The STTH30R03CG is a high-performance rectifier diode designed by STMicroelectronics for high-frequency applications. This diode is part of the TURBOSWITCH 'R' family, known for its ultra-high performance and ability to drastically cut losses in associated MOSFETs when operated at high dIF/dt. It is particularly suited for high-frequency offline SMPS (Switch-Mode Power Supplies) and DC/DC converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Repetitive peak reverse voltage) | 300 | V |
| IF(RMS) (RMS forward current) | 30 | A |
| IF(AV) (Average forward current) | 15 A (per diode), 30 A (per device) | A |
| IFSM (Surge non-repetitive forward current) | 120 A (tp = 10 ms sinusoidal) | A |
| Tstg (Storage temperature range) | -65 to +175 | °C |
| Tj (Maximum operating junction temperature) | +175 | °C |
| VF (Forward voltage drop) | 1.4 V (max at IF = 15 A, Tj = 125°C) | V |
| trr (Reverse recovery time) | 35 ns (max at IF = 15 A, dIF/dt = -200 A/µs, Tj = 125°C) | ns |
| Rth (j-c) (Junction to case thermal resistance) | 2.0 °C/W (per diode), 1.2 °C/W (total) | °C/W |
Key Features
- Designed for high-frequency applications.
- Hyperfast recovery time, competing with GaAs devices.
- Allows for a decrease in the size of snubbers and heatsinks.
- High RMS forward current of 30 A and average forward current of 15 A per diode.
- Low forward voltage drop and fast reverse recovery time.
Applications
The STTH30R03CG is ideal for use in high-frequency offline SMPS (Switch-Mode Power Supplies) and DC/DC converters. Its high performance and fast recovery characteristics make it suitable for applications requiring efficient and reliable rectification at high frequencies.
Q & A
- What is the repetitive peak reverse voltage of the STTH30R03CG?
The repetitive peak reverse voltage (VRRM) is 300 V. - What is the RMS forward current rating of the STTH30R03CG?
The RMS forward current (IF(RMS)) is 30 A. - What is the maximum operating junction temperature for the STTH30R03CG?
The maximum operating junction temperature (Tj) is +175°C. - What is the typical reverse recovery time of the STTH30R03CG?
The typical reverse recovery time (trr) is 35 ns at IF = 15 A, dIF/dt = -200 A/µs, and Tj = 125°C. - What are the package options available for the STTH30R03CG?
The STTH30R03CG is available in D2PAK and TO-247 packages. - What are the key benefits of using the STTH30R03CG in high-frequency applications?
The key benefits include hyperfast recovery, reduced losses in associated MOSFETs, and the ability to decrease the size of snubbers and heatsinks. - What is the storage temperature range for the STTH30R03CG?
The storage temperature range (Tstg) is -65 to +175°C. - What is the maximum surge non-repetitive forward current for the STTH30R03CG?
The maximum surge non-repetitive forward current (IFSM) is 120 A for a pulse duration of 10 ms sinusoidal. - How does the STTH30R03CG compare to GaAs devices in terms of recovery time?
The STTH30R03CG has a hyperfast recovery time that competes with GaAs devices. - What is the junction to case thermal resistance of the STTH30R03CG?
The junction to case thermal resistance (Rth(j-c)) is 2.0 °C/W per diode and 1.2 °C/W total.
