M93C46-WBN6P
  • Share:

STMicroelectronics M93C46-WBN6P

Manufacturer No:
M93C46-WBN6P
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC EEPROM 1KBIT SPI 2MHZ 8DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M93C46-WBN6P is a 1 Kbit electrically erasable programmable memory (EEPROM) device produced by STMicroelectronics. This component is part of the M93C series, which includes various memory sizes, but the M93C46 specifically offers 1 Kbit of memory. The device is accessed through the MICROWIRE™ bus protocol, allowing for serial communication. It operates within a voltage supply range of 2.5 V to 5.5 V and is designed for use in a wide range of applications requiring non-volatile memory.

Key Specifications

Parameter Value Unit
Memory Size 1 Kbit -
Organization 128 x 8 bits or 64 x 16 bits -
Supply Voltage (VCC) 2.5 to 5.5 V V
Ambient Operating Temperature -40 to 85 °C °C
Clock Frequency Up to 2 MHz Hz
Write Cycle Endurance 4,000,000 cycles at 25 °C -
Data Retention More than 200 years at 55 °C -
Package Types SO8N, TSSOP8, UFDFPN8 (DFN8) -

Key Features

  • Industry Standard MICROWIRE™ Bus: Allows for serial communication and easy integration into various systems.
  • Dual Organization: The memory can be configured either as bytes (x8) or words (x16) based on the Organization Select (ORG) input.
  • Self-Timed Programming Cycle with Auto-Erase: Ensures efficient and reliable programming with a cycle time of 5 ms.
  • READY/BUSY Signal: Indicates the status of the programming cycle.
  • Enhanced ESD/Latch-Up Behavior: Provides robust protection against electrostatic discharge and latch-up conditions.
  • High Write Cycle Endurance: Supports up to 4 million write cycles, ensuring long-term reliability.
  • Long Data Retention: Retains data for more than 200 years at 55 °C.
  • ECOPACK2 (RoHS Compliant) and Halogen-Free Packages: Environmentally friendly packaging options.

Applications

The M93C46-WBN6P is suitable for a variety of applications that require non-volatile memory, including:

  • Industrial control systems
  • Automotive systems
  • Consumer electronics
  • Medical devices
  • Any system requiring small amounts of non-volatile memory for configuration, calibration, or data logging.

Q & A

  1. What is the memory size of the M93C46-WBN6P?

    The M93C46-WBN6P has a memory size of 1 Kbit, which can be organized as 128 x 8 bits or 64 x 16 bits.

  2. What is the operating voltage range of the M93C46-WBN6P?

    The device operates within a voltage supply range of 2.5 V to 5.5 V.

  3. What is the maximum clock frequency for the M93C46-WBN6P?

    The maximum clock frequency is up to 2 MHz.

  4. How many write cycles can the M93C46-WBN6P endure?

    The device can endure up to 4 million write cycles at 25 °C.

  5. What is the data retention period for the M93C46-WBN6P?

    The device retains data for more than 200 years at 55 °C.

  6. What types of packages are available for the M93C46-WBN6P?

    The device is available in SO8N, TSSOP8, and UFDFPN8 (DFN8) packages.

  7. How does the M93C46-WBN6P handle power-down conditions?

    During power-down, the device must be deselected and in the Standby Power mode to prevent any internal write cycle from being in progress.

  8. What is the purpose of the READY/BUSY signal in the M93C46-WBN6P?

    The READY/BUSY signal indicates the status of the programming cycle, helping to manage the device's operation efficiently.

  9. Is the M93C46-WBN6P environmentally friendly?

    Yes, the device is available in ECOPACK2 (RoHS compliant) and halogen-free packages.

  10. How is the memory organization selected in the M93C46-WBN6P?

    The memory organization can be selected by setting the Organization Select (ORG) input to either VSS for x8 organization or VCC for x16 organization.

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:1Kb (128 x 8, 64 x 16)
Memory Interface:SPI
Clock Frequency:2 MHz
Write Cycle Time - Word, Page:5ms
Access Time:- 
Voltage - Supply:2.5V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
0 Remaining View Similar

In Stock

-
352

Please send RFQ , we will respond immediately.

Same Series
M93C66-RMC6TG
M93C66-RMC6TG
IC EEPROM 4KBIT SPI 1MHZ 8UFDFPN
M93C66-WMN6TP
M93C66-WMN6TP
IC EEPROM 4KBIT SPI 2MHZ 8SO
M93C56-WMN6P
M93C56-WMN6P
IC EEPROM 2KBIT SPI 2MHZ 8SO
M93C66-WMN6P
M93C66-WMN6P
IC EEPROM 4KBIT SPI 2MHZ 8SO
M93C46-MN6T
M93C46-MN6T
IC EEPROM 1KBIT SPI 2MHZ 8SO
M93C56-WMN6T
M93C56-WMN6T
IC EEPROM 2KBIT SPI 2MHZ 8SO
M93C56-MN6T
M93C56-MN6T
IC EEPROM 2KBIT SPI 2MHZ 8SO
M93C46-WBN6
M93C46-WBN6
IC EEPROM 1KBIT SPI 2MHZ 8DIP
M93C56-RMN6P
M93C56-RMN6P
IC EEPROM 2KBIT SPI 1MHZ 8SO
M93C56-WBN6P
M93C56-WBN6P
IC EEPROM 2KBIT SPI 2MHZ 8DIP
M93C76-WMN6T
M93C76-WMN6T
IC EEPROM 8KBIT SPI 2MHZ 8SO
M93C86-MN6P
M93C86-MN6P
IC EEPROM 16KBIT SPI 2MHZ 8SO

Similar Products

Part Number M93C46-WBN6P M93C46-WMN6P M93C56-WBN6P M93C86-WBN6P M93C46-WBN6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format EEPROM EEPROM EEPROM EEPROM EEPROM
Technology EEPROM EEPROM EEPROM EEPROM EEPROM
Memory Size 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16) 2Kb (256 x 8, 128 x 16) 16Kb (2K x 8, 1K x 16) 1Kb (128 x 8, 64 x 16)
Memory Interface SPI SPI SPI SPI SPI
Clock Frequency 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz
Write Cycle Time - Word, Page 5ms 5ms 5ms 5ms 5ms
Access Time - - - - -
Voltage - Supply 2.5V ~ 5.5V 2.5V ~ 5.5V 2.5V ~ 5.5V 2.5V ~ 5.5V 2.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP 8-SOIC 8-PDIP 8-PDIP 8-PDIP

Related Product By Categories

M29F800FB5AN6F2
M29F800FB5AN6F2
Alliance Memory, Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
CAT24C256YI-GT3
CAT24C256YI-GT3
onsemi
IC EEPROM 256KBIT I2C 8TSSOP
M95M01-RMN6P
M95M01-RMN6P
STMicroelectronics
IC EEPROM 1MBIT SPI 16MHZ 8SO
M24C02-RMN6P
M24C02-RMN6P
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
CAV25128VE-GT3
CAV25128VE-GT3
onsemi
IC EEPROM 128KBIT SPI 8SOIC
M27C256B-10B6
M27C256B-10B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
M27C512-12C1
M27C512-12C1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M29W320DB70N6F TR
M29W320DB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M95020-WMN6T
M95020-WMN6T
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
MT41K256M16HA-125 M AIT:E
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT47H64M16NF-25E:M
MT47H64M16NF-25E:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA