Overview
The M48Z08-100PC1 is a 5 V, 64 Kbit (8 kbit x 8) ZEROPOWER® non-volatile static RAM (SRAM) produced by STMicroelectronics. This component is pin and function compatible with the DS1225 and adheres to JEDEC standard 8 kbit x 8 SRAMs. The monolithic chip integrates an ultra-low power SRAM and a power-fail control circuit, providing a highly integrated battery-backed memory solution. It is housed in a 28-pin, 600 mil DIP CAPHAT™ package, which includes a long-life lithium button cell for battery backup.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Memory Size | 64 Kbit (8 kbit x 8) | |
| Supply Voltage (VCC) | 4.75 to 5.5 V (M48Z08), 4.5 to 5.5 V (M48Z18) | V |
| Ambient Operating Temperature (TA) | 0 to 70 °C | °C |
| READ Cycle Time | 100 ns | ns |
| WRITE Cycle Time | 100 ns | ns |
| Input Leakage Current (ILI) | ±1 µA | µA |
| Output Leakage Current (ILO) | ±1 µA | µA |
| Supply Current (ICC) - Active | 80 mA | mA |
| Supply Current (ICC) - Standby | 3 mA | mA |
| Input Low Voltage (VIL) | -0.3 to 0.8 V | V |
| Input High Voltage (VIH) | 2.2 VCC + 0.3 V | V |
| Output Low Voltage (VOL) | 0.4 V | V |
| Output High Voltage (VOH) | 2.4 V | V |
| Battery Backup Duration | At least 11 years | years |
Key Features
- Integrated Battery-Backed Memory: The M48Z08-100PC1 includes a self-contained lithium button cell in the CAPHAT™ DIP package, ensuring data retention during power failures.
- Ultra-Low Power SRAM: The component features ultra-low power consumption, making it suitable for applications where power efficiency is crucial.
- Unlimited WRITE Cycles: There are no limitations on the number of WRITE cycles, providing high reliability and durability.
- Automatic Power-Fail Deselect and WRITE Protection: The device automatically write-protects itself when the supply voltage falls within the specified power-fail deselect voltage window.
- Pin and Function Compatibility: Compatible with JEDEC standard 8 kbit x 8 SRAMs and the DS1225, making it easy to integrate into existing designs.
- RoHS Compliant: Lead-free second level interconnect, ensuring environmental compliance.
Applications
- Industrial Control Systems: Suitable for use in industrial control systems where data retention during power failures is critical.
- Medical Devices: Used in medical devices that require reliable data storage and retrieval.
- Aerospace and Defense: Applicable in aerospace and defense systems where high reliability and data security are essential.
- Automotive Systems: Can be used in automotive systems that need non-volatile memory solutions.
- Consumer Electronics: Suitable for various consumer electronics requiring battery-backed memory solutions.
Q & A
- What is the memory size of the M48Z08-100PC1?
The M48Z08-100PC1 has a memory size of 64 Kbit (8 kbit x 8).
- What is the supply voltage range for the M48Z08-100PC1?
The supply voltage range is 4.75 to 5.5 V for the M48Z08 and 4.5 to 5.5 V for the M48Z18.
- What is the operating temperature range for this component?
The ambient operating temperature range is 0 to 70 °C.
- How many WRITE cycles can the M48Z08-100PC1 handle?
The M48Z08-100PC1 can handle an unlimited number of WRITE cycles.
- What happens to the data during a power failure?
During a power failure, the device automatically switches to battery backup, ensuring data retention for at least 11 years.
- Is the M48Z08-100PC1 compatible with other SRAMs?
Yes, it is pin and function compatible with JEDEC standard 8 kbit x 8 SRAMs and the DS1225.
- What is the READ cycle time of the M48Z08-100PC1?
The READ cycle time is 100 ns.
- What is the WRITE cycle time of the M48Z08-100PC1?
The WRITE cycle time is also 100 ns.
- Is the M48Z08-100PC1 RoHS compliant?
Yes, the M48Z08-100PC1 is RoHS compliant with a lead-free second level interconnect.
- What kind of package does the M48Z08-100PC1 come in?
The M48Z08-100PC1 comes in a 28-pin, 600 mil DIP CAPHAT™ package.
