Overview
The BAV99 is a dual high-speed switching diode produced by SMC Diode Solutions. It is designed for various applications in electronic circuits, particularly where fast switching and minimal signal distortion are required. The diode is housed in a compact SOT-23 (TO-236AB) surface-mount package, making it ideal for space-constrained designs. It is suitable for use in digital and analog circuits, as well as in high-frequency applications such as RF signal processing and voltage regulation.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Reverse Voltage | VR | 70 | V |
Forward Current | IF | 200 | mA |
Non-Repetitive Peak Forward Surge Current | IFSM | 2.0 | A |
Power Dissipation | PD | 350 | mW |
Reverse Recovery Time | trr | 4 | ns |
Forward Voltage | VF | 0.715 - 1.25 | V |
Reverse Leakage Current | IR | 2.5 | µA |
Diode Capacitance | CT | 2 | pF |
Operating Temperature Range | TJ, TSTG | -55°C to +150°C | |
Package Style | SOT-23 (TO-236AB) | ||
Mounting Method | Surface Mount |
Key Features
- Dual Diode Configuration: The BAV99 contains two separate diodes in a single package, internally connected in series, making it suitable for applications requiring two diodes with a common connection.
- High-Speed Switching: The diode has a typical reverse recovery time (trr) of around 4 ns, making it effective for high-speed switching applications.
- Low Capacitance: It features a low junction capacitance of typically around 2 pF, contributing to its high-speed performance and reducing signal distortion.
- Low Forward Voltage Drop: The BAV99 exhibits a low forward voltage drop of approximately 0.9 V at a forward current of 1 mA, ensuring minimal power loss and efficient operation in low-voltage circuits.
- Reverse Breakdown Voltage: The diode can withstand a maximum reverse voltage of 70 V, allowing it to handle high-voltage transients and protect sensitive components.
- Small Package: The BAV99 is available in a compact SOT-23 package, beneficial for high-density circuit designs and portable devices.
Applications
- Switching Circuits: Frequently used in high-speed switching circuits where rapid on-off transitions are required, ideal for digital logic circuits and data line switching.
- Signal Clamping: Used in clamping circuits to protect sensitive components from transient voltages and signal spikes due to its low forward voltage and fast recovery time.
- RF and High-Frequency Applications: Suitable for high-frequency applications such as RF signal processing, where maintaining signal integrity is crucial.
- Voltage Regulation: Used in voltage regulation circuits to stabilize voltages and provide consistent performance across varying operating conditions.
Q & A
- What is the maximum reverse voltage of the BAV99 diode?
The BAV99 diode can withstand a maximum reverse voltage of 70 V. - What is the typical reverse recovery time of the BAV99 diode?
The typical reverse recovery time (trr) of the BAV99 diode is around 4 ns. - What is the forward current rating of the BAV99 diode?
The forward current rating of the BAV99 diode is 200 mA. - What is the package type of the BAV99 diode?
The BAV99 diode is housed in a SOT-23 (TO-236AB) surface-mount package. - What are the operating temperature ranges for the BAV99 diode?
The operating and storage temperature range for the BAV99 diode is -55°C to +150°C. - Is the BAV99 diode suitable for high-frequency applications?
Yes, the BAV99 diode is suitable for high-frequency applications due to its low capacitance and fast switching speed. - Can the BAV99 diode be used in voltage regulation circuits?
Yes, the BAV99 diode is used in voltage regulation circuits to stabilize voltages and provide consistent performance across varying operating conditions. - Is the BAV99 diode RoHS compliant?
Yes, the BAV99 diode is totally lead-free and fully RoHS compliant. - What is the maximum power dissipation of the BAV99 diode?
The maximum power dissipation of the BAV99 diode is 350 mW. - Can the BAV99 diode handle high-voltage transients?
Yes, the BAV99 diode can handle high-voltage transients due to its high reverse breakdown voltage.