RB751S-40TE61
  • Share:

Rohm Semiconductor RB751S-40TE61

Manufacturer No:
RB751S-40TE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 30MA EMD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40TE61 is a Schottky barrier diode produced by ROHM Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type (EMD2) package, making it ideal for hand-held and portable devices where space is limited.

The diode is known for its extremely low forward voltage, high reliability, and fast switching speed, which reduce conduction loss and enhance overall performance in various electronic circuits.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1.0 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between Terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra Small Mold Type (EMD2): Compact package suitable for space-constrained applications.
  • Low Forward Voltage (VF): Extremely low VF of 0.28 - 0.37 V at IF = 1.0 mA, reducing conduction loss.
  • High Reliability: Ensures stable performance in various operating conditions.
  • Fast Switching Speed: Ideal for high-speed switching applications.
  • Lead-Free Plating: Pb-free, halogen-free, and RoHS compliant.
  • Low Reverse Current: Minimal leakage current.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.

Applications

  • High-Speed Switching Applications: Used in circuits requiring fast switching times.
  • Circuit Protection: Provides protection against voltage spikes and surges.
  • Voltage Clamping: Helps in regulating voltage levels within circuits.
  • Hand-Held and Portable Devices: Ideal for devices where space is limited due to its ultra-small package.
  • Automotive Applications: Qualified to AEC-Q101 standards, making it suitable for automotive use.

Q & A

  1. What is the peak reverse voltage of the RB751S-40TE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40TE61?

    The typical forward voltage (VF) is 0.28 - 0.37 V at IF = 1.0 mA.

  4. Is the RB751S-40TE61 RoHS compliant?
  5. What are the typical applications of the RB751S-40TE61?

    It is used in high-speed switching applications, circuit protection, voltage clamping, and in hand-held and portable devices.

  6. What is the junction temperature range of the RB751S-40TE61?

    The junction temperature range is -55 to +150°C.

  7. What is the storage temperature range for this diode?

    The storage temperature range is -40 to +125°C.

  8. Does the RB751S-40TE61 meet automotive standards?
  9. What is the package type of the RB751S-40TE61?

    The package type is SOD-523 (EMD2).

  10. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 30 V
Capacitance @ Vr, F:2pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:EMD2
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
198

Please send RFQ , we will respond immediately.

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF

Related Product By Brand

MMBZ27VCLT116
MMBZ27VCLT116
Rohm Semiconductor
TVS DIODE 22VWM 38VC SSD3
BAS16T116
BAS16T116
Rohm Semiconductor
DIODE GENERAL PURPOSE SMD
BZX84C8V2LYT116
BZX84C8V2LYT116
Rohm Semiconductor
250MW, 8.2V, SOT-23, ZENER DIODE
BZX84B30VLYT116
BZX84B30VLYT116
Rohm Semiconductor
250MW, 30V, SOT-23, ZENER DIODE
BZX84C2V7LFHT116
BZX84C2V7LFHT116
Rohm Semiconductor
DIODE ZENER 2.7V 250MW SSD3
BZX84B10VLT116
BZX84B10VLT116
Rohm Semiconductor
DIODE ZENER 10V 250MW SSD3
BZX84B15VLFHT116
BZX84B15VLFHT116
Rohm Semiconductor
DIODE ZENER 15V 250MW SSD3
BZX84C3V3LFHT116
BZX84C3V3LFHT116
Rohm Semiconductor
DIODE ZENER 3.3V 250MW SSD3
BSS84WAHZGT106
BSS84WAHZGT106
Rohm Semiconductor
PCH -60V -0.21A, SOT-323, SMALL
LM2904FVT-E2
LM2904FVT-E2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI
BD14000EFV-CE2
BD14000EFV-CE2
Rohm Semiconductor
IC LSI CELL BALANCE 30HTSSOP
BM6104FV-CE2
BM6104FV-CE2
Rohm Semiconductor
DGTL ISO 2.5KV GATE DRVR 20SSOP