RB751S-40TE61
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Rohm Semiconductor RB751S-40TE61

Manufacturer No:
RB751S-40TE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 30MA EMD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40TE61 is a Schottky barrier diode produced by ROHM Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type (EMD2) package, making it ideal for hand-held and portable devices where space is limited.

The diode is known for its extremely low forward voltage, high reliability, and fast switching speed, which reduce conduction loss and enhance overall performance in various electronic circuits.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1.0 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between Terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra Small Mold Type (EMD2): Compact package suitable for space-constrained applications.
  • Low Forward Voltage (VF): Extremely low VF of 0.28 - 0.37 V at IF = 1.0 mA, reducing conduction loss.
  • High Reliability: Ensures stable performance in various operating conditions.
  • Fast Switching Speed: Ideal for high-speed switching applications.
  • Lead-Free Plating: Pb-free, halogen-free, and RoHS compliant.
  • Low Reverse Current: Minimal leakage current.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.

Applications

  • High-Speed Switching Applications: Used in circuits requiring fast switching times.
  • Circuit Protection: Provides protection against voltage spikes and surges.
  • Voltage Clamping: Helps in regulating voltage levels within circuits.
  • Hand-Held and Portable Devices: Ideal for devices where space is limited due to its ultra-small package.
  • Automotive Applications: Qualified to AEC-Q101 standards, making it suitable for automotive use.

Q & A

  1. What is the peak reverse voltage of the RB751S-40TE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40TE61?

    The typical forward voltage (VF) is 0.28 - 0.37 V at IF = 1.0 mA.

  4. Is the RB751S-40TE61 RoHS compliant?
  5. What are the typical applications of the RB751S-40TE61?

    It is used in high-speed switching applications, circuit protection, voltage clamping, and in hand-held and portable devices.

  6. What is the junction temperature range of the RB751S-40TE61?

    The junction temperature range is -55 to +150°C.

  7. What is the storage temperature range for this diode?

    The storage temperature range is -40 to +125°C.

  8. Does the RB751S-40TE61 meet automotive standards?
  9. What is the package type of the RB751S-40TE61?

    The package type is SOD-523 (EMD2).

  10. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 30 V
Capacitance @ Vr, F:2pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:EMD2
Operating Temperature - Junction:125°C (Max)
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