RB751S-40GTE61
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Rohm Semiconductor RB751S-40GTE61

Manufacturer No:
RB751S-40GTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40GTE61 is a Schottky barrier diode manufactured by ROHM Semiconductor. This diode is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type package, making it ideal for hand-held and portable devices where space is limited. The diode is known for its high reliability and low forward voltage, which reduces conduction loss.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between Terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra small mold type (EMD2, SOD-523 package)
  • Extremely low forward voltage (VF) - 0.28 V (Typ) @ IF = 1.0 mA
  • Low reverse current
  • High reliability
  • Lead-free plating, RoHS compliant, and halogen-free/BFR-free
  • Extremely fast switching speed
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements

Applications

The RB751S-40GTE61 is suitable for various applications, including:

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Hand-held and portable devices where space is limited
  • Automotive and other applications requiring high reliability and specific quality standards

Q & A

  1. What is the peak reverse voltage of the RB751S-40GTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40GTE61?

    The typical forward voltage (VF) is 0.28 V at IF = 1.0 mA.

  4. Is the RB751S-40GTE61 RoHS compliant?
  5. What are the storage temperature limits for this diode?

    The storage temperature range is -40°C to +125°C.

  6. What is the junction temperature limit for the RB751S-40GTE61?

    The junction temperature limit is 125°C.

  7. What are the typical applications for the RB751S-40GTE61?

    High-speed switching applications, circuit protection, voltage clamping, and hand-held/portable devices.

  8. Is the RB751S-40GTE61 suitable for automotive applications?
  9. What is the package type of the RB751S-40GTE61?

    The package type is SOD-523 (EMD2).

  10. What is the reverse current at 30V for the RB751S-40GTE61?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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