MMBZ10VALT116
  • Share:

Rohm Semiconductor MMBZ10VALT116

Manufacturer No:
MMBZ10VALT116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
TVS DIODE 6.5VWM 14.2VC SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBZ10VALT116 is a Transient Voltage Suppressor (TVS) diode produced by Rohm Semiconductor. This component is designed to provide protection against Electrostatic Discharge (ESD) and transient overvoltage in electronic circuits. It is encapsulated in a SOT23 (TO-236AB) package, making it suitable for surface-mount applications.

Key Specifications

ParameterValue
PackageSOT23 (TO-236AB)
ConfigurationUnidirectional double ESD protection
VRWM (V)6.5 V
VESD IEC 61000-4-2 (kV)30 kV (contact discharge)
Cd [typ] (pF)≤ 170 pF
Rated Peak Pulse Power (PPPM)24 W
Ultra Low Leakage Current (IRM)20 nA

Key Features

  • Unidirectional ESD protection of two lines and bidirectional ESD protection of one line.
  • Low diode capacitance: Cd ≤ 170 pF.
  • Rated peak pulse power: PPPM = 24 W.
  • Ultra low leakage current: IRM = 20 nA.
  • ESD protection up to 30 kV (contact discharge) according to IEC 61000-4-2, level 4.

Applications

The MMBZ10VALT116 is widely used in various electronic devices to protect against ESD and transient overvoltages. Key applications include:

  • Computers and peripherals.
  • Audio and video equipment.
  • Cellular handsets and accessories.
  • Portable electronics.

Q & A

  1. What is the primary function of the MMBZ10VALT116?
    The primary function is to provide ESD and transient overvoltage protection in electronic circuits.
  2. What package type is the MMBZ10VALT116 available in?
    The component is available in a SOT23 (TO-236AB) package.
  3. What is the maximum ESD protection voltage for the MMBZ10VALT116?
    The component provides ESD protection up to 30 kV (contact discharge) according to IEC 61000-4-2, level 4.
  4. What is the typical diode capacitance of the MMBZ10VALT116?
    The typical diode capacitance is ≤ 170 pF.
  5. What is the rated peak pulse power of the MMBZ10VALT116?
    The rated peak pulse power is 24 W.
  6. What is the ultra low leakage current of the MMBZ10VALT116?
    The ultra low leakage current is 20 nA.
  7. In which configurations does the MMBZ10VALT116 provide ESD protection?
    The component provides unidirectional ESD protection of two lines and bidirectional ESD protection of one line.
  8. What are some common applications of the MMBZ10VALT116?
    Common applications include computers and peripherals, audio and video equipment, cellular handsets and accessories, and portable electronics.
  9. Is the MMBZ10VALT116 RoHS compliant?
    Yes, the component is RoHS compliant.
  10. Where can I purchase the MMBZ10VALT116?
    The component can be purchased from various distributors such as Digi-Key, Mouser, and Nexperia's official distributors.

Product Attributes

Type:Zener
Unidirectional Channels:2
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):6.5V (Max)
Voltage - Breakdown (Min):9.5V
Voltage - Clamping (Max) @ Ipp:14.2V
Current - Peak Pulse (10/1000µs):1.7A
Power - Peak Pulse:24W
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:105pF @ 1MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SSD3
0 Remaining View Similar

In Stock

-
273

Please send RFQ , we will respond immediately.

Similar Products

Part Number MMBZ10VALT116 MMBZ12VALT116 MMBZ20VALT116 MMBZ18VALT116 MMBZ10VALYT116 MMBZ15VALT116 MMBZ16VALT116 MMBZ30VALT116
Manufacturer Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Product Status Active Active Active Active Active Active Active Active
Type Zener Zener Zener Zener Zener Zener Zener Zener
Unidirectional Channels 2 2 2 2 2 2 2 2
Bidirectional Channels - - - - - - - -
Voltage - Reverse Standoff (Typ) 6.5V (Max) 8.5V (Max) 17V (Max) 14.5V (Max) 6.5V (Max) 12V (Max) 13V (Max) 24V (Max)
Voltage - Breakdown (Min) 9.5V 11.4V 19V 17.1V 9.5V 14.25V 15.2V 28.5V
Voltage - Clamping (Max) @ Ipp 14.2V 17V 28V 25V 14.2V 21V 23V 43V
Current - Peak Pulse (10/1000µs) 1.7A 2.35A 1.4A 1.6A 1.7A 1.9A 1.7A 950mA
Power - Peak Pulse 24W 40W 40W 40W 24W 40W 40W 40W
Power Line Protection No No No No No No No No
Applications General Purpose General Purpose General Purpose General Purpose General Purpose General Purpose General Purpose General Purpose
Capacitance @ Frequency 105pF @ 1MHz 85pF @ 1MHz 55pF @ 1MHz 60pF @ 1MHz - 75pF @ 1MHz 70pF @ 1MHz 38pF @ 1MHz
Operating Temperature - - - - 150°C (TJ) - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SSD3 SSD3 SSD3 SSD3 SOT-23 SSD3 SSD3 SSD3

Related Product By Categories

TVS8501V5MUT5G
TVS8501V5MUT5G
onsemi
TVS DIODE 5VWM 11.5VC 2UDFN
ESD7104MUTAG
ESD7104MUTAG
onsemi
TVS DIODE 5VWM 10VC 10UDFN
TPD2EUSB30ADRTR
TPD2EUSB30ADRTR
Texas Instruments
TVS DIODE 3.6VWM 8VC SOT9X3
SD05T1G
SD05T1G
onsemi
TVS DIODE 5VWM 9.8VC SOD323
SMA6J40CA-TR
SMA6J40CA-TR
STMicroelectronics
TVS DIODE 40VWM 73.6VC SMA
SM6T39CA-E3/5B
SM6T39CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
DF6A6.8FUT1G
DF6A6.8FUT1G
onsemi
TVS DIODE 5VWM SC88/SC70-6
SM6T22A-E3/5B
SM6T22A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
5KP43A-E3/73
5KP43A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 43VWM 69.4VC P600
SM15T33CAHE3/9AT
SM15T33CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T220AHE3_A/H
SM15T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB

Related Product By Brand

BAV170HYFHT116
BAV170HYFHT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
BAS40-04HYT116
BAS40-04HYT116
Rohm Semiconductor
40V, 120MA, SOT-23, SERIES CONNE
BZX84C15VLT116
BZX84C15VLT116
Rohm Semiconductor
DIODE ZENER 15V 250MW SSD3
BZX84C5V6LYFHT116
BZX84C5V6LYFHT116
Rohm Semiconductor
250MW, 5.6V, SOT-23, AUTOMOTIVE
BZX84B10VLFHT116
BZX84B10VLFHT116
Rohm Semiconductor
DIODE ZENER 10V 250MW SSD3
BC847BHZGT116
BC847BHZGT116
Rohm Semiconductor
TRANS NPN 45V 0.1A SST3
LM2904FVM-GTR
LM2904FVM-GTR
Rohm Semiconductor
IC OPAMP GP 2 CIRCUIT 8MSOP
LM358F-E2
LM358F-E2
Rohm Semiconductor
IC OPAMP GP 2 CIRCUIT 8SOP
LM2901FV-E2
LM2901FV-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR
LM393FVM-TR
LM393FVM-TR
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM393F
BD6792FM-E2
BD6792FM-E2
Rohm Semiconductor
IC MOTOR DRIVER 18V-30V 28HSOP
BD9111NV-E2
BD9111NV-E2
Rohm Semiconductor
IC REG BUCK 3.3V 2A SON008V5060