Overview
The LM5110-2M Dual Gate Driver, produced by Texas Instruments (though previously associated with National Semiconductor), is designed to replace industry standard gate drivers with enhanced peak output current and efficiency. This device features two independent and identical driver channels, each capable of driving N-Channel MOSFETs. The LM5110 combines MOS and bipolar transistors in its output stages to optimize current capability over a wide range of output voltages and operating temperatures.
Key Specifications
| Parameter | Value |
|---|---|
| Package | SOIC-8, WSON-10 (4 mm × 4 mm) |
| Operating Temperature Range | -40°C to 125°C |
| Output Current Capability | 5A sink / 3A source |
| Propagation Times | 25 ns (typical) |
| Rise and Fall Times | 14 ns / 12 ns (with 2 nF load) |
| Input Compatibility | TTL compatible |
| Supply Voltage Range | VCC to VEE (can be negative relative to input ground) |
| Shutdown Input | Low power mode when pulled below 1.5V |
| Undervoltage Lockout Protection | Yes |
Key Features
- Independently drives two N-Channel MOSFETs
- Compound CMOS and bipolar outputs reduce output current variation
- 5A sink / 3A source current capability
- Two channels can be connected in parallel to double the drive current
- Independent inputs (TTL compatible)
- Fast propagation times (25 ns typical) and rise/fall times (14 ns / 12 ns with 2 nF load)
- Dedicated input ground pin (IN_REF) for split supply or single supply operation
- Outputs swing from VCC to VEE, which can be negative relative to input ground
- Available in dual noninverting, dual inverting, and combination configurations
- Shutdown input provides low power mode
- Supply rail undervoltage lockout protection
- Pin-out compatible with industry standard gate drivers
Applications
- Synchronous rectifier gate drivers
- Switch-mode power supply gate drivers
- Solenoid and motor drivers
Q & A
- What is the primary function of the LM5110 Dual Gate Driver?
The LM5110 Dual Gate Driver is designed to drive two N-Channel MOSFETs independently with high current capability and efficiency.
- What are the key components of the LM5110's output driver stage?
The output driver stage includes MOS and bipolar transistors operating in parallel to optimize current capability.
- What are the typical propagation times and rise/fall times of the LM5110?
The typical propagation times are 25 ns, and the rise/fall times are 14 ns / 12 ns with a 2 nF load.
- Can the LM5110 be operated in parallel to increase drive current?
Yes, the two channels can be connected in parallel to double the drive current capability.
- What is the purpose of the dedicated input ground pin (IN_REF)?
The dedicated input ground pin (IN_REF) allows for split supply or single supply operation and provides negative drive capability.
- What protection features does the LM5110 include?
The LM5110 includes supply rail undervoltage lockout protection and a shutdown input for low power mode.
- In what packages is the LM5110 available?
The LM5110 is available in SOIC-8 and WSON-10 (4 mm × 4 mm) packages.
- What are some common applications of the LM5110?
Common applications include synchronous rectifier gate drivers, switch-mode power supply gate drivers, and solenoid and motor drivers.
- How does the LM5110 handle output voltage swings?
The outputs swing from VCC to VEE, which can be negative relative to the input ground.
- Is the LM5110 compatible with industry standard gate drivers?
Yes, the LM5110 is pin-out compatible with industry standard gate drivers.
